Works by Sheremet, V. N.


Results: 19
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    Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti- n-GaN.

    Published in:
    Semiconductors, 2009, v. 43, n. 7, p. 872, doi. 10.1134/S1063782609070082
    By:
    • Belyaev, A. E.;
    • Boltovets, N. S.;
    • Ivanov, V. N.;
    • Kapitanchuk, L. M.;
    • Konakova, R. V.;
    • Kudryk, Ya. Ya.;
    • Lytvyn, O. S.;
    • Milenin, V. V.;
    • Sheremet, V. N.;
    • Sveshnikov, Yu. N.
    Publication type:
    Article
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    Role of dislocations in formation of ohmic contacts to heavily doped n-Si.

    Published in:
    Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 99
    By:
    • Belyaev, A. E.;
    • Pilipenko, V. A.;
    • Anischik, V. M.;
    • Petlitskaya, T. V.;
    • Sachenko, A. V.;
    • Klad'ko, V. P.;
    • Konakova, R. V.;
    • Boltovets, N. S.;
    • Korostinskaya, T. V.;
    • Kapitanchuk, L. M.;
    • Kudryk, Ya. Ya.;
    • Vinogradov, A. O.;
    • Sheremet, V. N.
    Publication type:
    Article
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