Works by Shepeliavyi, P. E.

Results: 24

Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.

Published in:

Semiconductors, 2001, v. 35, n. 7, p. 821

By:

Bratus’, V. Ya.;
Yukhimchuk, V. A.;
Berezhinsky, L. I.;
Valakh, M. Ya.;
Vorona, I. P.;
Indutnyi, I. Z.;
Petrenko, T. T.;
Shepeliavyı, P. E.;
Yanchuk, I. B.

Publication type:

Article

Phase separation in SiO x films annealed under enhanced hydrostatic pressure.

Published in:

Physica Status Solidi (B), 2008, v. 245, n. 12, p. 2756, doi. 10.1002/pssb.200844049

By:

Rudko, G. Yu.;
Maidanchuk, I. Yu.;
Indutnyy, I. Z.;
Misiuk, A.;
Gule, E. G.;
Shepeliavyi, P. E.

Publication type:

Article

Visible photoluminescence of selectively etched porous nc-Si-Siox structures.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 206, doi. 10.1134/S1063782610020120

By:

Indutnyi, I. Z.;
Michailovska, E. V.;
Shepeliavyi, P. E.;
Dan'ko, V. A.

Publication type:

Article

Luminescent and Raman study of nanostructures formed upon annealing of SiOx:Sm films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 68, doi. 10.15407/spqeo26.01.068

By:

Michailovska, K. V.;
Indutnyi, I. Z.;
Shepeliavyi, P. E.;
Sopinskyy, M. V.;
Dan’ko, V. A.;
Yukhymchuk, V. O.

Publication type:

Article

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 215, doi. 10.15407/spqeo22.02.215

By:

Hreshchuk, O. M.;
Yukhymchuk, V. O.;
Dzhagan, V. M.;
Danko, V. A.;
Min’ko, V. I.;
Indutnyi, I. Z.;
Shepeliavyi, P. E.;
Lytvyn, P. M.;
Sheregii, E.;
Prokhorenko, S.;
Polit, J.;
Zak, D.;
Płoch, D.;
Valakh, M. Ya.

Publication type:

Article

Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 362, doi. 10.15407/spqeo20.03.362

By:

Indutnyi, I. Z.;
Ushenin, Yu. V.;
Hegemann, D.;
Vandenbossche, M.;
Myn'ko, V. I.;
Shepeliavyi, P. E.;
Lukaniuk, M. V.;
Lytvyn, P. M.;
Khrystosenko, R. V.

Publication type:

Article

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 438, doi. 10.15407/spqeo18.04.438

By:

Dan'ko, V. A.;
Dorozinsky, G. V.;
Indutnyi, I. Z.;
Myn'ko, V. I.;
Ushenin, Yu. V.;
Shepeliavyi, P. E.;
Lukaniuk, M. V.;
Korchovyi, A. A.;
Khrystosenko, R. V.

Publication type:

Article

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 324, doi. 10.15407/spqeo18.03.324

By:

Michailovska, K. V.;
Indutnyi, I. Z.;
Kudryavtsev, O. O.;
Sopinskyy, M. V.;
Shepeliavyi, P. E.

Publication type:

Article

Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 272, doi. 10.15407/spqeo18.03.272

By:

Chege, V. I.;
Lytvyn, V. K.;
Lopatynskyi, A. M.;
Shepeliavyi, P. E.;
Lytvyn, O. S.;
Goltvyanskyi, Yu. V.

Publication type:

Article

High-speed optical recording in vitreous chalcogenide thin films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 389

By:

Kryuchyn, A. A.;
Petrov, V. V.;
Rubish, V. M.;
Lapchuk, A. S.;
Kostyukevych, S. O.;
Shepeliavyi, P. E.;
Kostyukevych, K. V.

Publication type:

Article

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 336

By:

Michailovska, K. V.;
Indutnyi, I. Z.;
Shepeliavyi, P. E.;
Dan'ko, V. A.

Publication type:

Article

Photostimulated etching of germanium chalcogenide films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 345

By:

Dan'ko, V. A.;
Indutnyi, I. Z.;
Myn'ko, V. I.;
Shepeliavyi, P. E.;
Lukyanyuk, M. V.;
Litvin, O. S.

Publication type:

Article

Polarization conversion effect in obliquely deposited SiOx films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 273

By:

Sopinskyy, M. V.;
Indutnyi, I. Z.;
Michailovska, K. V.;
Shepeliavyi, P. E.;
Tkach, V. M.

Publication type:

Article

Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 127

By:

Lisovskyy, I. P.;
Litovchenko, V. G.;
Zlobin, S. O.;
Voitovych, M. V.;
Khatsevich, I. M.;
Indutnyy, I. Z.;
Shepeliavyi, P. E.;
Kolomys, O. F.

Publication type:

Article

Controlling the photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 413, doi. 10.15407/spqeo13.04.413

By:

Dan'ko, V. A.;
Bratus', V. Ya.;
Indutnyi, I. Z.;
Lisovskyy, I. P.;
Zlobin, S. O.;
Michailovska, K. V.;
Shepeliavyi, P. E.

Publication type:

Article

Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiOx nanostructures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 2, p. 105

By:

Indutnyi, I. Z.;
Michailovska, K. V.;
Min'ko, V. I.;
Shepeliavyi, P. E.

Publication type:

Article

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 1, p. 40, doi. 10.15407/spqeo10.01.040

By:

Min'ko, V. I.;
Shepeliavyi, P. E.;
Indutnyy, I. Z.;
Litvin, O. S.

Publication type:

Article

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 9, doi. 10.15407/spqeo9.01.009

By:

Indutnyy, I. Z.;
Lysenko, V. S.;
Maidanchuk, I. Yu.;
Min’ko, V. I.;
Nazarov, A. N.;
Tkachenko, A. S.;
Shepeliavyi, P. E.;
Dan’ko, V. A.

Publication type:

Article

Recording the high efficient diffraction gratings by using He-Cd laser.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 446

By:

Kostyukevych, S. A.;
Morozovska, A. N.;
Minko, V. I.;
Shepeliavyi, P. E.;
Kudryavtsev, A.A.;
Rubish, V. M.;
Rubish, V. V.;
Tverdokhleb, I. V.;
Kostiukevych, A. S.;
Dyrda, S. V.

Publication type:

Article

Paramagnetic defects related to photoluminescence in SiOx films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 400

By:

Rudko, G. Yu.;
Vorona, I. P.;
Indutnyy, I. Z.;
Ishchenko, S. S.;
Shepeliavyi, P. E.;
Yukhymchuk, V. O.

Publication type:

Article

Optical recording of information pits in thin layers of chalcogenide semiconductors.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 93

By:

Morozovska, A. N.;
Kostyukevych, S. A.;
Nikitenko, L. L.;
Kryuchin, A. A.;
Kudryavtsev, A. A.;
Shepeliavyi, P. E.;
Moskalenko, N. L.

Publication type:

Article

Recording of high efficiency diffraction gratings by He-Ne laser.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 88

By:

Minko, V. I.;
Shepeliavyi, P. E.;
Danko, V. A.;
Romanenko, P. F.;
Litvin, O. S.;
Indutnyy, I. Z.

Publication type:

Article

Fabrication of Holographic Diffraction Gratings Based on As[sub 2]S[sub 3] Layers.

Published in:

Technical Physics, 2003, v. 48, n. 1, p. 115, doi. 10.1134/1.1538739

By:

Kostyukevych, S. A.;
Shepeliavyi, P. E.;
Romanenko, P. F.;
Tverdochleb, I. V.

Publication type:

Article

Gradient Light-Absorbing SiO[sub x]/Me Coatings for Display Panels.

Published in:

Technical Physics, 2002, v. 47, n. 6, p. 720, doi. 10.1134/1.1486195

By:

Indutnyy, I. Z.;
Shepeliavyi, P. E.;
Michailovskaya, E. V.;
Park, C. W.;
Lee, J. B.;
Do, Y. R.

Publication type:

Article

Works by Shepeliavyi, P. E.

Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.

Phase separation in SiO <sub>x</sub> films annealed under enhanced hydrostatic pressure.

Visible photoluminescence of selectively etched porous nc-Si-Sio<sub>x</sub> structures.

Luminescent and Raman study of nanostructures formed upon annealing of SiO<sub>x</sub>:Sm films.

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.

Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms.

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.

Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device.

High-speed optical recording in vitreous chalcogenide thin films.

Nickel-induced enhancement of photoluminescence in nc-Si-SiO<sub>x</sub> nanostructures.

Photostimulated etching of germanium chalcogenide films.

Polarization conversion effect in obliquely deposited SiO<sub>x</sub> films.

Effect of low-temperature annealing on light-emitting properties of na-Si/SiO<sub>x</sub> porous nanocomposite films.

Controlling the photoluminescence spectra of porous nc-Si-SiO<sub>x</sub> structures by vapor treatment.

Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiO<sub>x</sub> nanostructures.

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist.

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO<sub>x</sub> films.

Recording the high efficient diffraction gratings by using He-Cd laser.

Paramagnetic defects related to photoluminescence in SiO<sub>x</sub> films.

Optical recording of information pits in thin layers of chalcogenide semiconductors.

Recording of high efficiency diffraction gratings by He-Ne laser.

Fabrication of Holographic Diffraction Gratings Based on As[sub 2]S[sub 3] Layers.

Gradient Light-Absorbing SiO[sub x]/Me Coatings for Display Panels.