Found: 9
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High‐Performance Monolithic 3D Integrated Complementary Inverters Based on Monolayer n‐MoS<sub>2</sub> and p‐WSe<sub>2</sub>.
- Published in:
- Small, 2024, v. 20, n. 17, p. 1, doi. 10.1002/smll.202307728
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- Publication type:
- Article
Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays.
- Published in:
- Small Science, 2024, v. 4, n. 2, p. 1, doi. 10.1002/smsc.202300144
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- Article
Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 12, p. 1, doi. 10.1002/aelm.202300353
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- Publication type:
- Article
Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs.
- Published in:
- Micromachines, 2023, v. 14, n. 3, p. 576, doi. 10.3390/mi14030576
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- Publication type:
- Article
Device Characteristics of E-mode GaN HEMTs with a Second Gate Connected to the Source.
- Published in:
- Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6776, doi. 10.1007/s11664-020-08292-7
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- Publication type:
- Article
Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits.
- Published in:
- Micromachines, 2020, v. 11, n. 8, p. 741, doi. 10.3390/mi11080741
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- Publication type:
- Article
Rear‐Passivated Ultrathin Cu(In,Ga)Se<sub>2</sub> Films by Al<sub>2</sub>O<sub>3</sub> Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency.
- Published in:
- Advanced Functional Materials, 2019, v. 29, n. 48, p. N.PAG, doi. 10.1002/adfm.201905040
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- Article
The Author reply.
- Published in:
- 2009
- By:
- Publication type:
- Letter
Neuroimages of persistent falcine sinus in children.
- Published in:
- World Journal of Pediatrics, 2009, v. 5, n. 1, p. 63, doi. 10.1007/s12519-009-0012-7
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- Publication type:
- Article