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X-ray study of dopant state in highly doped semiconductor single crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 62
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- Article
Separation of Phases and Charge States in Relaxor Ferroelectric PbCo1/3Nb2/3O3.
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- Journal of Experimental & Theoretical Physics, 2020, v. 130, n. 3, p. 439, doi. 10.1134/S1063776120030048
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Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers.
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- Technical Physics Letters, 2018, v. 44, n. 6, p. 548, doi. 10.1134/S106378501806024X
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- Article
Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 6, p. 525, doi. 10.1134/S1063785018060172
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- Article
Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 1, p. 81, doi. 10.1134/S106378501801011X
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- Article
Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology.
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- Technical Physics Letters, 2010, v. 36, n. 6, p. 496, doi. 10.1134/S1063785010060039
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Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy.
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- Technical Physics Letters, 2008, v. 34, n. 11, p. 992, doi. 10.1134/S1063785008110278
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- Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer.
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- Technical Physics Letters, 2008, v. 34, n. 6, p. 479, doi. 10.1134/S1063785008060084
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- Article
Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates.
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- Technical Physics Letters, 2007, v. 33, n. 6, p. 524, doi. 10.1134/S1063785007060235
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- Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.
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- Technical Physics Letters, 2006, v. 32, n. 8, p. 674, doi. 10.1134/S1063785006080116
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- Article
Heteropolytype Structures with SiC Quantum Dots.
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- Technical Physics Letters, 2005, v. 31, n. 12, p. 997, doi. 10.1134/1.2150879
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- Article
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
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- Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951
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- Article
Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.
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- Technical Physics Letters, 2005, v. 31, n. 5, p. 367, doi. 10.1134/1.1931770
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Bulk Large-Area GaN Layers.
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- Technical Physics Letters, 2003, v. 29, n. 5, p. 400, doi. 10.1134/1.1579807
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- Article
Real structure of Cd[sub 2]Nb[sub 2]O[sub 7] pyrochlore single crystals.
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- Technical Physics Letters, 1999, v. 25, n. 7, p. 561, doi. 10.1134/1.1262553
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- Article
Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy.
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- Technical Physics, 2019, v. 64, n. 4, p. 531, doi. 10.1134/S1063784219040054
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- Article
X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals.
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- Technical Physics, 2010, v. 55, n. 4, p. 537, doi. 10.1134/S1063784210040183
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- Article
A study of thick 3 C-SiC epitaxial layers grown on 6 H-SiC substrates by sublimation epitaxy in vacuum.
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- Semiconductors, 2007, v. 41, n. 3, p. 263, doi. 10.1134/S1063782607030037
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- Article
A study of n <sup>+</sup>-6 H/ n-3 C/ p <sup>+</sup>-6 H-SiC heterostructures grown by sublimation epitaxy.
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- Semiconductors, 2006, v. 40, n. 12, p. 1398, doi. 10.1134/S1063782606120050
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- Article
Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC.
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- Semiconductors, 2001, v. 35, n. 12, p. 1372, doi. 10.1134/1.1427973
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- Article
Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum.
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- Semiconductors, 2000, v. 34, n. 10, p. 1133, doi. 10.1134/1.1317570
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- Article
Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC.
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- Semiconductors, 1997, v. 31, n. 9, p. 926, doi. 10.1134/1.1187154
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Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates.
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- Semiconductors, 1997, v. 31, n. 3, p. 232, doi. 10.1134/1.1187112
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On the Structural Perfection of Large-Diameter Silicon Carbide Ingots.
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- Inorganic Materials, 2020, v. 56, n. 9, p. 928, doi. 10.1134/S0020168520090034
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Synthesis of Thin Single-Crystalline α-Cr<sub>2</sub>O<sub>3</sub> Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition.
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- Technical Physics Letters, 2023, v. 49, p. S284, doi. 10.1134/S1063785023010273
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- Article
Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering.
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- Technical Physics Letters, 2020, v. 46, n. 4, p. 382, doi. 10.1134/S1063785020040185
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- Article
Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate.
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 228, doi. 10.1134/S106378502003013X
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Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate.
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- Technical Physics Letters, 2019, v. 45, n. 6, p. 529, doi. 10.1134/S106378501906004X
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Properties of Semipolar GaN Grown on a Si(100) Substrate.
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- Semiconductors, 2019, v. 53, n. 7, p. 989, doi. 10.1134/S1063782619070054
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- Article