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Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride.
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- JETP Letters, 2009, v. 89, n. 2, p. 73, doi. 10.1134/S0021364009020052
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- Article
Connection between the cognitive style and copping strategies of the HIV-positive young patients.
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- European Psychiatry, 2020, v. 63, p. S454
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- Article
Detectors Based on Low-Barrier Mott Diodes and Their Characteristics in the 150–250 GHz Range.
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- Technical Physics Letters, 2019, v. 45, n. 3, p. 239, doi. 10.1134/S1063785019030179
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- Article
All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures.
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- Technical Physics Letters, 2017, v. 43, n. 1, p. 101, doi. 10.1134/S1063785017010254
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- Article
Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride.
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- Technical Physics Letters, 2009, v. 35, n. 10, p. 948, doi. 10.1134/S1063785009100216
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- Article
Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots.
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- Technical Physics Letters, 2008, v. 34, n. 1, p. 1, doi. 10.1134/S106378500801001X
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- Article
MOVPE of structures with aluminum nanocluster layers in a GaAs matrix.
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- Technical Physics Letters, 2007, v. 33, n. 5, p. 444, doi. 10.1134/S1063785007050252
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- Article
Electron Transport Effects in the IR Photoconductivity of InGaAs/GaAs Structures with Quantum Dots.
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- Technical Physics Letters, 2004, v. 30, n. 9, p. 795, doi. 10.1134/1.1804599
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- Article
A New Method for Determining the Sharpness of InGaAs/GaAs Heterojunctions by Auger Depth Profiling.
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- Technical Physics Letters, 2001, v. 27, n. 10, p. 868, doi. 10.1134/1.1414559
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- Article
Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons.
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- Technical Physics Letters, 2001, v. 27, n. 2, p. 114, doi. 10.1134/1.1352765
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- Article
Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates.
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- Technical Physics Letters, 2000, v. 26, n. 4, p. 298, doi. 10.1134/1.1262823
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- Article
TRANSIENT RESPONSE THEORY OF SEMICONDUCTOR SUPERLATTICES: CONNECTION WITH BLOCH OSCILLATIONS.
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- Modern Physics Letters B, 1991, v. 5, n. 16, p. 1087, doi. 10.1142/S0217984991001337
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- Article
Microwave Volt–Impedance Spectroscopy of Semiconductors.
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- Technical Physics, 2020, v. 65, n. 11, p. 1859, doi. 10.1134/S1063784220110237
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- Article
Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers.
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- Technical Physics, 2019, v. 64, n. 12, p. 1827, doi. 10.1134/S1063784219120041
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- Article
Anisotropic piezoeffect in microelectromechanical systems based on epitaxial Al<sub>0.5</sub>Ga<sub>0.5</sub>As/AlAs heterostructures.
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- Technical Physics, 2009, v. 54, n. 10, p. 1476, doi. 10.1134/S1063784209100119
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- Article
Current-Voltage Characteristics of the Semiconductor Superlattice Interacting with a Strong High-Frequency Field.
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- Physica Status Solidi (B), 1982, v. 110, n. 2, p. K117, doi. 10.1002/pssb.2221100248
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- Article
On the Role of Tunneling in Metal–Semiconductor Nanocontacts.
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- Journal of Experimental & Theoretical Physics, 2004, v. 99, n. 1, p. 211, doi. 10.1134/1.1787094
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- Article
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110-120 K).
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- Semiconductors, 2016, v. 50, n. 10, p. 1396, doi. 10.1134/S1063782616100249
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- Article
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions.
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- Semiconductors, 2016, v. 50, n. 9, p. 1225, doi. 10.1134/S1063782616090244
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- Article
Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers.
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- Semiconductors, 2015, v. 49, n. 8, p. 1083, doi. 10.1134/S1063782615080151
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- Article
On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures.
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- Semiconductors, 2014, v. 48, n. 10, p. 1342, doi. 10.1134/S1063782614100236
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Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures.
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- Semiconductors, 2014, v. 48, n. 5, p. 691, doi. 10.1134/S1063782614050200
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- Article
Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions.
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- Semiconductors, 2014, v. 48, n. 5, p. 686, doi. 10.1134/S1063782614050212
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- Article
Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050-1070 nm).
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- Semiconductors, 2012, v. 46, n. 9, p. 1211, doi. 10.1134/S1063782612090217
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- Article
Thermal delocalization of carriers in semiconductor lasers (λ = 1010-1070 nm).
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- Semiconductors, 2012, v. 46, n. 9, p. 1207, doi. 10.1134/S1063782612090205
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- Article
High-order diffraction gratings for high-power semiconductor lasers.
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- Semiconductors, 2012, v. 46, n. 2, p. 241, doi. 10.1134/S1063782612020236
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- Article
Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900-920 nm).
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- Semiconductors, 2010, v. 44, n. 10, p. 1370, doi. 10.1134/S1063782610100222
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- Article
The temperature dependence of internal optical losses in semiconductor lasers (λ = 900-920 nm).
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- Semiconductors, 2010, v. 44, n. 10, p. 1365, doi. 10.1134/S1063782610100210
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- Article
Pulsed semiconductor lasers with higher optical strength of cavity output mirrors.
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- Semiconductors, 2010, v. 44, n. 6, p. 789, doi. 10.1134/S1063782610060163
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- Article
Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers.
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- Semiconductors, 2010, v. 44, n. 6, p. 805, doi. 10.1134/S1063782610060199
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- Article
Temperature delocalization of charge carriers in semiconductor lasers.
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- Semiconductors, 2010, v. 44, n. 5, p. 661, doi. 10.1134/S1063782610050209
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- Article
Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride.
- Published in:
- Semiconductors, 2009, v. 43, n. 7, p. 968, doi. 10.1134/S1063782609070288
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- Article
Solution of the problem of charge-carrier injection into an insulating layer under self-consistent boundary conditions at contacts.
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- Semiconductors, 2008, v. 42, n. 11, p. 1309, doi. 10.1134/S1063782608110122
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- Article
Admittance and nonlinear capacitance of a multilayer metal-semiconductor structure.
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- Semiconductors, 2008, v. 42, n. 7, p. 783, doi. 10.1134/S1063782608070063
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- Article
Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer.
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- Semiconductors, 2008, v. 42, n. 3, p. 298, doi. 10.1134/S106378260803010X
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- Article
Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters.
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- Semiconductors, 2007, v. 41, n. 8, p. 909, doi. 10.1134/S1063782607080088
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- Article
A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix.
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- Semiconductors, 2005, v. 39, n. 1, p. 82, doi. 10.1134/1.1852651
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- Article
InGaAs/GaAs Quantum Dot Heterostructures for 3–5 μm IR Detectors.
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- Semiconductors, 2005, v. 39, n. 1, p. 86, doi. 10.1134/1.1852652
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- Article
Electrical Properties of Metal–Semiconductor Nanocontacts.
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- Semiconductors, 2004, v. 38, n. 9, p. 1047, doi. 10.1134/1.1797483
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- Article
Theory of Tunneling Current in Metal–Semiconductor Contacts with Subsurface Isotype δ-Doping.
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- Semiconductors, 2004, v. 38, n. 5, p. 554, doi. 10.1134/1.1755891
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- Article
Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy.
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- Semiconductors, 2003, v. 37, n. 2, p. 194, doi. 10.1134/1.1548664
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- Article
Control of Charge Transport Mode in the Schottky Barrier by δ-Doping: Calculation and Experiment for Al/GaAs.
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- Semiconductors, 2002, v. 36, n. 5, p. 505, doi. 10.1134/1.1478540
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- Article
The Accuracy of Reconstructing the Semiconductor Doping Profile from Capacitance–Voltage Characteristics Measured during Electrochemical Etching.
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- Semiconductors, 2001, v. 35, n. 7, p. 766, doi. 10.1134/1.1385710
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- Article
New approach to the analysis of negative magnetostriction in two-dimensional structures.
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- Semiconductors, 1999, v. 33, n. 8, p. 898, doi. 10.1134/1.1187920
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- Article
Deep states in silicon &-doped GaAs
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- Semiconductors, 1998, v. 32, n. 6, p. 659, doi. 10.1134/1.1187460
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- Article
Characterization of GaAs/InxGa1_xAS quantum-dot heterostructures by electrical and optical methods
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- Semiconductors, 1998, v. 32, n. 1, p. 99, doi. 10.1134/1.1187370
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- Article
Simple method for reconstructing the doping fine structure in semiconductors from C-V measurements in an electrolytic cell.
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- Semiconductors, 1997, v. 31, n. 8, p. 789, doi. 10.1134/1.1187251
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- Article
Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents.
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- Technical Physics Letters, 2021, v. 47, n. 5, p. 368, doi. 10.1134/S1063785021040155
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- Article
The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 551, doi. 10.1134/S1063785020060024
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- Article
Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures.
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- Semiconductors, 2021, v. 55, n. 5, p. 518, doi. 10.1134/S1063782621050134
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- Article