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Peculiarities of Nucleation and Growth of InGaN Nanowires on SiC/Si Substrates by HVPE.
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- Technical Physics Letters, 2024, v. 50, n. 2, p. 133, doi. 10.1134/S1063785023170145
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- Article
Studying the Pyroelectric Effect in AlN Epilayers.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 709, doi. 10.1134/S1063785018080199
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- Article
Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate.
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- Technical Physics Letters, 2013, v. 39, n. 3, p. 274, doi. 10.1134/S106378501303019X
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- Article
Epitaxy of gallium nitride in semi-polar direction on silicon.
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- Technical Physics Letters, 2012, v. 38, n. 1, p. 9, doi. 10.1134/S1063785012010051
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- Article
Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology.
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- Technical Physics Letters, 2010, v. 36, n. 6, p. 496, doi. 10.1134/S1063785010060039
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- Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer.
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- Technical Physics Letters, 2008, v. 34, n. 6, p. 479, doi. 10.1134/S1063785008060084
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- Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.
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- Technical Physics Letters, 2006, v. 32, n. 8, p. 674, doi. 10.1134/S1063785006080116
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- Article
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
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- Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951
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- Article
Biplanar Epitaxial AlN/SiC/(n, p)SiC Structures for High-Temperature Functional Electronic Devices.
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- Technical Physics, 2020, v. 65, n. 3, p. 428, doi. 10.1134/S1063784220030184
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- Article
Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates.
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- Materials (1996-1944), 2022, v. 15, n. 18, p. 6202, doi. 10.3390/ma15186202
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- Article
Growth and Optical Properties of Ga 2 O 3 Layers of Different Crystalline Modifications.
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- Coatings (2079-6412), 2022, v. 12, n. 12, p. 1802, doi. 10.3390/coatings12121802
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- Article
Chloride epitaxy of β-GaO layers grown on c-sapphire substrates.
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- Semiconductors, 2016, v. 50, n. 7, p. 980, doi. 10.1134/S1063782616070186
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- Article
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy.
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- Semiconductors, 2016, v. 50, n. 4, p. 541, doi. 10.1134/S1063782616040217
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- Article
Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications.
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- Technical Physics Letters, 2023, v. 49, p. S319, doi. 10.1134/S1063785023010182
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- Article
Phase Transformations in Gallium Oxide Layers.
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- Technical Physics Letters, 2023, v. 49, p. S227, doi. 10.1134/S1063785023900856
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- Article
Dielectric and Pyroelectric Properties of Composites Based on Aluminum and Gallium Nitrides Grown by Chloride-Hydride Epitaxy on a Silicon Carbide-on-Silicon Substrate.
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- Technical Physics Letters, 2021, v. 47, n. 6, p. 466, doi. 10.1134/S1063785021050138
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- Article
Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 539, doi. 10.1134/S106378502006005X
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- Article
Specific Features of the Pyroelectric Effect in Epitaxial Aluminum Nitride Layers Obtained on Si Substrates.
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- Technical Physics Letters, 2020, v. 46, n. 1, p. 16, doi. 10.1134/S1063785020010058
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- Article
Growing III–V Semiconductor Heterostructures on SiC/Si Substrates.
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- Technical Physics Letters, 2019, v. 45, n. 7, p. 711, doi. 10.1134/S1063785019070277
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- Article
Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy.
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- Semiconductors, 2021, v. 55, n. 12, p. 995, doi. 10.1134/S1063782621080170
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- Article