Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 12, p. 344, doi. 10.1002/pssr.201004364
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- Publication type:
- Article
Works matching AU Shang, Da-Shan
Results: 5
1
2
Mimicking Synaptic Plasticity and Neural Network Using Memtranstors.
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- Advanced Materials, 2018, v. 30, n. 12, p. 1, doi. 10.1002/adma.201706717
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- Publication type:
- Article
3
A Synaptic Transistor based on Quasi-2D Molybdenum Oxide.
- Published in:
- Advanced Materials, 2017, v. 29, n. 27, p. n/a, doi. 10.1002/adma.201700906
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- Publication type:
- Article
4
All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing.
- Published in:
- Advanced Functional Materials, 2018, v. 28, n. 42, p. N.PAG, doi. 10.1002/adfm.201804170
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- Publication type:
- Article
5
Quantum electric-dipole liquid on a triangular lattice.
- Published in:
- Nature Communications, 2016, v. 7, n. 2, p. 10569, doi. 10.1038/ncomms10569
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- Publication type:
- Article