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Azolotriazine-Based Fluorescent Test Systems for the Field Diagnosis of Endometritis in Cows.
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- Journal of Analytical Chemistry, 2024, v. 79, n. 9, p. 1214, doi. 10.1134/S1061934824700588
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A Spectroscopic Study of Changes in the Secondary Structure of Proteins of Biological Fluids of the Oral Cavity by Synchrotron Infrared Microscopy.
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- Optics & Spectroscopy, 2019, v. 127, n. 6, p. 1002, doi. 10.1134/S0030400X19120221
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A Simultaneous Analysis of Microregions of Carious Dentin by the Methods of Laser-Induced Fluorescence and Raman Spectromicroscopy.
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- Optics & Spectroscopy, 2018, v. 125, n. 5, p. 803, doi. 10.1134/S0030400X18110267
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- Article
Photoluminescence Properties of Nanoporous Nanocrystalline Carbonate-Substituted Hydroxyapatite.
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- Optics & Spectroscopy, 2018, v. 124, n. 2, p. 187, doi. 10.1134/S0030400X18020066
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- Article
STUDY OF THE DEPOSITION PROCESS OF VINPOCETINE ON THE SURFACE OF POROUS SILICON FOR THE PURPOSE OF ESTABLISHMENT OF THE TARGETED DRUG DELIVERY SYSTEMS.
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- Smart Nanocomposites, 2015, v. 6, n. 2, p. 239
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STUDY OF THE DEPOSITION PROCESS OF VINPOCETINE ON THE SURFACE OF POROUS SILICON.
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- Smart Nanocomposites, 2015, v. 6, n. 2, p. 143
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Structural, Morphological, and Sorption Characteristics of Imperfect Nanocrystalline Calcium Hydroxyapatite for the Creation of Dental Biomimetic Composites.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, v. 13, n. 4, p. 756, doi. 10.1134/S1027451019040244
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Structural and Spectroscopic Investigation of Biomimetic Composites—Promising Agents for the Remineralization of Native Dental Tissue.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 3, p. 442, doi. 10.1134/S1027451018020131
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Relaxation of crystal lattice parameters and structural ordering in InGaAs epitaxial alloys.
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- Semiconductors, 2010, v. 44, n. 8, p. 1106, doi. 10.1134/S1063782610080270
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The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures.
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- Semiconductors, 2010, v. 44, n. 2, p. 184, doi. 10.1134/S1063782610020089
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Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions.
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- Semiconductors, 2009, v. 43, n. 12, p. 1610, doi. 10.1134/S1063782609120070
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Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga<sub> x</sub>In<sub>1 − x</sub>P/GaAs(100) heterostructures.
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- Semiconductors, 2009, v. 43, n. 9, p. 1221, doi. 10.1134/S106378260909022X
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The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures.
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- Semiconductors, 2009, v. 43, n. 8, p. 1098, doi. 10.1134/S1063782609080247
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Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers.
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- Semiconductors, 2008, v. 42, n. 9, p. 1055, doi. 10.1134/S1063782608090108
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Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga<sub> x </sub>In<sub>1 − x </sub>As<sub> y </sub>P<sub>1 − y </sub>/GaInP/GaAs(001) heterostructures.
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- Semiconductors, 2008, v. 42, n. 9, p. 1069, doi. 10.1134/S1063782608090121
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Vegard’s Law and Superstructural Phases in Al<sub>x</sub>Ga<sub>1 – x</sub>As/GaAs(100) Epitaxial Heterostructures.
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- Semiconductors, 2005, v. 39, n. 3, p. 336, doi. 10.1134/1.1882797
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Structural and Optical Investigations of Heterostructures Based on Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>P<sub>1-y</sub>:Si Solid Solutions Obtained by MOCVD.
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- Physics Research International, 2014, p. 1, doi. 10.1155/2014/782357
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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.
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- Semiconductors, 2022, v. 56, n. 4, p. 253, doi. 10.1134/S1063782622040030
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Properties of Compliant Substrates Based on Porous Silicon Formed by Two-stage Etching.
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- Semiconductors, 2022, v. 56, n. 4, p. 259, doi. 10.1134/S1063782622040042
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Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy.
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- Semiconductors, 2021, v. 55, n. 12, p. 995, doi. 10.1134/S1063782621080170
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Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon.
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- Semiconductors, 2021, v. 55, n. 1, p. 122, doi. 10.1134/S1063782621010140
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Spectroscopic Studies of Integrated GaAs/Si Heterostructures.
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- Semiconductors, 2021, v. 55, n. 1, p. 44, doi. 10.1134/S1063782621010139
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Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.
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- Semiconductors, 2020, v. 54, n. 5, p. 596, doi. 10.1134/S1063782620050115
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Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.
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- Semiconductors, 2020, v. 54, n. 4, p. 417, doi. 10.1134/S1063782620040168
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On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates.
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- Semiconductors, 2019, v. 53, n. 11, p. 1550, doi. 10.1134/S1063782619110174
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Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.
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- Semiconductors, 2019, v. 53, n. 8, p. 1120, doi. 10.1134/S1063782619080165
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Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A<sup>III</sup>N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.
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- Semiconductors, 2019, v. 53, n. 7, p. 993, doi. 10.1134/S1063782619070224
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Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N/Si(111) Heterostructures with a Nanocolumnar Film Morphology.
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- Semiconductors, 2019, v. 53, n. 1, p. 65, doi. 10.1134/S1063782619010172
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Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial In<sub>x</sub>Ga<sub>1 - x</sub>N/Si(111) Heterostructures.
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- Semiconductors, 2018, v. 52, n. 13, p. 1653, doi. 10.1134/S106378261813016X
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Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide.
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- Semiconductors, 2018, v. 52, n. 9, p. 1163, doi. 10.1134/S1063782618090154
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Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.
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- Semiconductors, 2018, v. 52, n. 8, p. 1012, doi. 10.1134/S1063782618080195
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