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Synthesis of epitaxial Si(100) nanowires on Si(100) substrate using vapor–liquid–solid growth in anodic aluminum oxide nanopore arrays.
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- Applied Physics A: Materials Science & Processing, 2007, v. 87, n. 4, p. 607, doi. 10.1007/s00339-007-3984-y
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- Article
Influence of the Si/SiO<sub>2</sub> interface on the charge carrier density of Si nanowires.
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- Applied Physics A: Materials Science & Processing, 2006, v. 86, n. 2, p. 187, doi. 10.1007/s00339-006-3746-2
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- Article
The shape of epitaxially grown silicon nanowires and the influence of line tension.
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- Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 3, p. 445, doi. 10.1007/s00339-004-3092-1
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- Article
Epitaxial growth of non-c-oriented ferroelectric SrBi[sub 2] Ta[sub 2] O[sub 9] thin films on Si(100) substrates.
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- Applied Physics A: Materials Science & Processing, 2000, v. 71, n. 1, p. 101
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- Article
Synthesis of Vertical High-Density Epitaxial Si(100) Nanowire Arrays on a Si(100) Substrate Using an Anodic Aluminum Oxide Template.
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- Advanced Materials, 2007, v. 19, n. 7, p. 917, doi. 10.1002/adma.200700153
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- Article
Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres.
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- Applied Physics A: Materials Science & Processing, 2000, v. 70, n. 1, p. 13
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- Article
Study of laser-deposited metallic thin films by a combination of high-resolution ex situ and time-resolved in situ experiments.
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- Applied Physics A: Materials Science & Processing, 1999, v. 69, n. 7, p. S455
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- Article
Growth of partially strain-relaxed Si[sub 1-y] C[sub y] epilayers on (100)Si.
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- Applied Physics A: Materials Science & Processing, 1998, v. 67, n. 2, p. 147, doi. 10.1007/s003390050752
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- Article
Wafer bonding of gallium arsenide on sapphire.
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- Applied Physics A: Materials Science & Processing, 1997, v. 64, n. 6, p. 533, doi. 10.1007/s003390050512
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- Article
TEM Cross-Section Investigations of Epitaxial Ba.
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- Crystal Research & Technology, 2000, v. 35, n. 6/7, p. 641, doi. 10.1002/1521-4079(200007)35:6/7<641::AID-CRAT641>3.0.CO;2-Z
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