Works matching AU Semyagin, B. R.

Results: 38

Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters.

Published in:

Semiconductors, 2000, v. 34, n. 9, p. 1068, doi. 10.1134/1.1309425

By:

Brunkov, P. N.;
Chaldyshev, V. V.;
Chernigovskiı, A. V.;
Suvorova, A. A.;
Bert, N. A.;
Konnikov, S. G.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 61, doi. 10.1134/1.1187947

By:

Volodin, V. A.;
Efremov, M. D.;
Preobrazhenskiı, V. V.;
Semyagin, B. R.;
Bolotov, V. V.;
Sachkov, V. A.

Publication type:

Article

Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures.

Published in:

Semiconductors, 1999, v. 33, n. 10, p. 1080, doi. 10.1134/1.1187869

By:

Kunitsyn, A. E.;
Chaldyshev, V. V.;
Vul’, S. P.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790

By:

Vilisova, M. D.;
Ivonin, I. V.;
Lavrentieva, L. G.;
Subach, S. V.;
Yakubenya, M. P.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Bert, N. A.;
Musikhin, Yu. G.;
Chaldyshev, V. V.

Publication type:

Article

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1036, doi. 10.1134/1.1187561

By:

Chaldyshev, V. V.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Bert, N. A.;
Kunitsyn, A. E.;
Musikhin, Yu. G.;
Tret’yakov, V. V.;
Werner, P.

Publication type:

Article

Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1044, doi. 10.1134/1.1187563

By:

Brunkov, P. N.;
Chaldyshev, V. V.;
Bert, N. A.;
Suvorova, A. A.;
Konnikov, S. G.;
Chernigovskiı, A. V.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485

By:

Chaldyshev, V. V.;
Kunitsyn, A. E.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Tret'yakov, V. V.;
Faleev, N. N.

Publication type:

Article

Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C.

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 683, doi. 10.1134/1.1187483

By:

Bert, N. A.;
Musikhin, Yu. G.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Suvorova, A. A.;
Chaldyshev, V. V.;
Werner, R.

Publication type:

Article

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 19, doi. 10.1134/1.1187352

By:

Faleev, N. N.;
Chaldyshev, V. V.;
Kunitsyn, A. E.;
Tret'yakov, V. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates.

Published in:

Technical Physics Letters, 2020, v. 46, n. 2, p. 161, doi. 10.1134/S1063785020020194

By:

Emelyanov, E. A.;
Nastovjak, A. G.;
Petrushkov, M. O.;
Esin, M. Yu.;
Gavrilova, T. A.;
Putyato, M. A.;
Schwartz, N. L.;
Shvets, V. A.;
Vasev, A. V.;
Semyagin, B. R.;
Preobrazhenskii, V. V.

Publication type:

Article

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source.

Published in:

Technical Physics Letters, 2018, v. 44, n. 7, p. 612, doi. 10.1134/S1063785018070258

By:

Petrushkov, M. O.;
Putyato, M. A.;
Chistokhin, I. B.;
Semyagin, B. R.;
Emel’yanov, E. A.;
Esin, M. Yu.;
Gavrilova, T. A.;
Vasev, A. V.;
Preobrazhenskii, V. V.

Publication type:

Article

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells.

Published in:

JETP Letters, 2017, v. 106, n. 11, p. 727, doi. 10.1134/S0021364017230102

By:

Ruffenach, S.;
Krishtopenko, S. S.;
Bovkun, L. S.;
Ikonnikov, A. V.;
Marcinkiewicz, M.;
Consejo, C.;
Potemski, M.;
Piot, B.;
Orlita, M.;
Semyagin, B. R.;
Putyato, M. A.;
Emel’yanov, E. A.;
Preobrazhenskii, V. V.;
Knap, W.;
Gonzalez-Posada, F.;
Boissier, G.;
Tournié, E.;
Teppe, F.;
Gavrilenko, V. I.

Publication type:

Article

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers.

Published in:

Acta Crystallographica Section B: Structural Science, Crystal Engineering & Materials, 2013, v. 69, n. 1, p. 30, doi. 10.1107/S2052519213000183

By:

Baidakova, M. V.;
Bert, N. A.;
Chaldyshev, V.V.;
Nevedomsky, V. N.;
Yagovkina, M. A.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 273, doi. 10.1134/S1063782624030151

By:

Snigirev, L. A.;
Bert, N. A.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Chaldyshev, V. V.

Publication type:

Article

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2023, v. 57, n. 9, p. 405, doi. 10.1134/S1063782623060155

By:

Semyagin, B. R.;
Kolesnikov, A. V.;
Putyato, M. A.;
Preobrazhenskii, V. V.;
Popova, T. B.;
Ushanov, V. I.;
Chaldyshev, V. V.

Publication type:

Article

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1119, doi. 10.1134/S1063782620090304

By:

Utochkin, V. V.;
Fadeev, M. A.;
Krishtopenko, S. S.;
Rumyantsev, V. V.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Morozov, S. V.;
Semyagin, B. R.;
Putyato, M. A.;
Emelyanov, E. A.;
Preobrazhenskii, V. V.;
Gavrilenko, V. I.

Publication type:

Article

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1143, doi. 10.1134/S1063782619090021

By:

Abramkin, D. S.;
Petrushkov, M. O.;
Putyato, M. A.;
Semyagin, B. R.;
Emelyanov, E. A.;
Preobrazhenskii, V. V.;
Gutakovskii, A. K.;
Shamirzaev, T. S.

Publication type:

Article

The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 503, doi. 10.1134/S1063782619040092

By:

Emelyanov, E. A.;
Vasev, A. V.;
Semyagin, B. R.;
Yesin, M. Yu.;
Loshkarev, I. D.;
Vasilenko, A. P.;
Putyato, M. A.;
Petrushkov, M. O.;
Preobrazhenskii, V. V.

Publication type:

Article

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature.

Published in:

Semiconductors, 2018, v. 52, n. 13, p. 1704, doi. 10.1134/S1063782618130213

By:

Ushanov, V. I.;
Chaldyshev, V. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1484, doi. 10.1134/S1063782618110039

By:

Abramkin, D. S.;
Petrushkov, M. O.;
Putyato, M. A.;
Semyagin, B. R.;
Shamirzaev, T. S.

Publication type:

Article

Resonant Optical Reflection from AsSb-AlGaAs Metamaterials and Structures.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 468, doi. 10.1134/S1063782618040292

By:

Ushanov, V. I.;
Chaldyshev, V. V.;
Preobrazhenskiy, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1185, doi. 10.1134/S1063782613090170

By:

Nevedomskiy, V. N.;
Bert, N. A.;
Chaldyshev, V. V.;
Preobrazhenskiy, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process.

Published in:

Semiconductors, 2009, v. 43, n. 12, p. 1617, doi. 10.1134/S1063782609120082

By:

Nevedomskii, V. N.;
Bert, N. A.;
Chaldyshev, V. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236

By:

Bert, N. A.;
Kolesnikova, A. L.;
Nevedomsky, V. N.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Romanov, A. E.;
Seleznev, V. M.;
Semyagin, B. R.;
Chaldyshev, V. V.

Publication type:

Article

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1078, doi. 10.1134/S1063782609080211

By:

Chaldyshev, V. V.;
Yagovkina, M. A.;
Baidakova, M. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1013, doi. 10.1134/1.2042589

By:

Brunkov, P. N.;
Gutkin, A. A.;
Chaldyshev, V. V.;
Bert, N. N.;
Konnikov, S. G.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 387, doi. 10.1134/1.1734663

By:

Brunkov, P. N.;
Gutkin, A. A.;
Moiseenko, A. K.;
Musikhin, Yu. G.;
Chaldyshev, V. V.;
Cherkashin, N. N.;
Konnikov, S. G.;
Preobrazhenski&icaron;, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy.

Published in:

Semiconductors, 2002, v. 36, n. 9, p. 953, doi. 10.1134/1.1507270

By:

Vilisova, M. D.;
Kunitsyn, A. E.;
Lavrent’eva, L. G.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Toropov, S. E.;
Chaldyshev, V. V.

Publication type:

Article

Phonon–Plasmon Interaction in Tunneling GaAs/AlAs Superlattices.

Published in:

JETP Letters, 2000, v. 71, n. 11, p. 477, doi. 10.1134/1.1307997

By:

Volodin, V. A.;
Efremov, M. D.;
Preobrazhenskiı, V. V.;
Semyagin, B. R.;
Bolotov, V. V.;
Sachkov, V. A.;
Galaktionov, E. A.;
Kretinin, A. V.

Publication type:

Article

Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles.

Published in:

Optics & Spectroscopy, 2019, v. 126, n. 5, p. 492, doi. 10.1134/S0030400X19050151

By:

Kosarev, A. N.;
Chaldyshev, V. V.;
Kondikov, A. A.;
Vartanyan, T. A.;
Toropov, N. A.;
Gladskikh, I. A.;
Gladskikh, P. V.;
Akimov, I.;
Bayer, M.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Lateral localization of optical phonons in GaAs quantum islands.

Published in:

JETP Letters, 1999, v. 70, n. 2, p. 75, doi. 10.1134/1.568133

By:

Efremov, M. D.;
Volodin, V. A.;
Preobrazhenskiı, V. V.;
Semyagin, B. R.;
Sachkov, V. A.;
Bolotov, V. V.;
Galaktionov, E. A.;
Kretinin, A. V.

Publication type:

Article

Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface.

Published in:

JETP Letters, 1997, v. 66, n. 1, p. 47, doi. 10.1134/1.567481

By:

Volodin, V. A.;
Efremov, M. D.;
Prints, V. Ya.;
Preobrazhenskiı, V. V.;
Semyagin, B. R.;
Govorov, A. O.

Publication type:

Article

Localized optical vibrational modes in GaSb/AlSb superlattices.

Published in:

JETP Letters, 1996, v. 64, n. 5, p. 393, doi. 10.1134/1.567209

By:

Milekhin, A. G.;
Pusep, Yu. A.;
Yanovskii, Yu. A.;
Preobrazhenskii, V. V.;
Semyagin, B. R.;
Lubyshev, D. I.

Publication type:

Article

Observation of LO-phonon localization in GaAs quantum wires on faceted (311)A surfaces.

Published in:

JETP Letters, 1996, v. 63, n. 12, p. 994, doi. 10.1134/1.567133

By:

Volodin, V. A.;
Efremov, M. D.;
Prints, V. Ya.;
Preobrazhenskii, V. V.;
Semyagin, B. R.

Publication type:

Article

A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure.

Published in:

Technical Physics, 2019, v. 64, n. 7, p. 1010, doi. 10.1134/S106378421907020X

By:

Putyato, M. A.;
Valisheva, N. A.;
Petrushkov, M. O.;
Preobrazhenskii, V. V.;
Chistokhin, I. B.;
Semyagin, B. R.;
Emel'yanov, E. A.;
Vasev, A. V.;
Skachkov, A. F.;
Yurko, G. I.;
Nesterenko, I. I.

Publication type:

Article

A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure.

Published in:

Technical Physics, 1997, v. 42, n. 12, p. 1395, doi. 10.1134/1.1258884

By:

Zhuravlev, K. S.;
Shamirzaev, T. S.;
Preobrazhenskiı, V. V.;
Semyagin, B. R.;
Kostyuchenko, V. R.

Publication type:

Article

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem A B/Si-solar energy converters on an active silicon substrate.

Published in:

Russian Physics Journal, 2011, v. 53, n. 9, p. 906, doi. 10.1007/s11182-011-9509-3

By:

Putyato, M. A.;
Semyagin, B. R.;
Emel'yanov, E. A.;
Pakhanov, N. A.;
Preobrazhenskii, V. V.

Publication type:

Article

Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing.

Published in:

Russian Physics Journal, 2008, v. 51, n. 9, p. 887, doi. 10.1007/s11182-009-9140-8

By:

Vasev, A. V.;
Putyato, M. A.;
Semyagin, B. R.;
Seleznev, V. A.;
Preobrazhenskii, V. V.

Publication type:

Article

Works matching AU Semyagin, B. R.

Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters.

Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering.

Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures.

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy.

Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters.

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C.

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates.

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn<sub>3</sub>P<sub>2</sub>-Based Source.

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells.

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers.

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.

Growth of GaAs<sub>1–x</sub>Bi<sub>x</sub> Layers by Molecular-Beam Epitaxy.

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region.

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.

The Growth of InAs<sub>x</sub>Sb<sub>1 –</sub><sub>x</sub> Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature.

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates.

Resonant Optical Reflection from AsSb-AlGaAs Metamaterials and Structures.

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier.

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process.

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.

Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters.

Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs.

Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy.

Phonon–Plasmon Interaction in Tunneling GaAs/AlAs Superlattices.

Epitaxial InGaAs Quantum Dots in Al<sub>0.29</sub>Ga<sub>0.71</sub>As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles.

Lateral localization of optical phonons in GaAs quantum islands.

Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface.

Localized optical vibrational modes in GaSb/AlSb superlattices.

Observation of LO-phonon localization in GaAs quantum wires on faceted (311)A surfaces.

A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure.

A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure.

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem A B/Si-solar energy converters on an active silicon substrate.

Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing.