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High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 732, doi. 10.1134/1.1766381
By:
- Maksimov, M.V.;
- Shernyakov, Yu.M.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Musikhin, Yu.G.;
- Ledentsov, N.N.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Nikitina, E.V.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 9, p. 1104, doi. 10.1134/1.1610128
By:
- Semenova, E.S.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Mikhrin, S.S.;
- Kovsh, A.R.;
- Ustinov, V.M.;
- Musikhin, Yu.G.;
- Blokhin, S.A.;
- Gladyshev, A.G.;
- Ledentsov, N.N.
Publication type:
Article
Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.
Published in:
Semiconductors, 2003, v. 37, n. 9, p. 1119, doi. 10.1134/1.1610131
By:
- Zhukov, A.E.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Vasil'ev, A.P.;
- Nikitina, E.V.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Shernyakov, Yu.M.;
- Musikhin, Yu.G.;
- Maksimov, M.V.;
- Ledentsov, N.N.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound.
Published in:
Semiconductors, 2002, v. 36, n. 8, p. 899, doi. 10.1134/1.1500468
By:
- Zhukov, A.E.;
- Kovsh, A.R.;
- Semenova, E.S.;
- Ustinov, V.M.;
- Wei, L.;
- Wang, J.-S.;
- Chi, J.Y.
Publication type:
Article
Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers.
Published in:
Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1106, doi. 10.1049/el.2015.1392
By:
- Zubov, F.I.;
- Maximov, M.V.;
- Shernyakov, Yu.M.;
- Kryzhanovskaya, N.V.;
- Semenova, E.S.;
- Yvind, K.;
- Asryan, L.V.;
- Zhukov, A.E.
Publication type:
Article

Found: 5

High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.

Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.

Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.

Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound.

Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers.