Found: 19
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Electron–hole superfluidity in strained Si/Ge type II heterojunctions.
- Published in:
- NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-021-00344-3
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- Article
Probing resonating valence bonds on a programmable germanium quantum simulator.
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- NPJ Quantum Information, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41534-023-00727-3
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- Article
Three-Dimensional Atomic-Scale Tomography of Buried Semiconductor Heterointerfaces.
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- Advanced Materials Interfaces, 2023, v. 10, n. 3, p. 1, doi. 10.1002/admi.202201189
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- Article
Low disorder and high valley splitting in silicon.
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- NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-024-00826-9
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- Article
Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99%.
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- NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-024-00813-0
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- Article
Hamiltonian phase error in resonantly driven CNOT gate above the fault-tolerant threshold.
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- NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-023-00802-9
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- Article
Front Cover: A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well (Adv. Quantum Technol. 5/2022).
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- Advanced Quantum Technologies, 2022, v. 5, n. 5, p. 1, doi. 10.1002/qute.202270051
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- Article
A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well.
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- Advanced Quantum Technologies, 2022, v. 5, n. 5, p. 1, doi. 10.1002/qute.202100167
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- Article
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-35458-0
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- Article
Author Correction: A shuttling-based two-qubit logic gate for linking distant silicon quantum processors.
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- 2022
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- Correction Notice
A shuttling-based two-qubit logic gate for linking distant silicon quantum processors.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33453-z
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- Publication type:
- Article
A shuttling-based two-qubit logic gate for linking distant silicon quantum processors.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33453-z
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- Publication type:
- Article
Reducing charge noise in quantum dots by using thin silicon quantum wells.
- Published in:
- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-36951-w
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- Article
Author Correction: Reducing charge noise in quantum dots by using thin silicon quantum wells.
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- 2023
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- Publication type:
- Correction Notice
Realization of Atomically Controlled Dopant Devices in Silicon.
- Published in:
- Small, 2007, v. 3, n. 4, p. 563, doi. 10.1002/smll.200600680
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- Article
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology.
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- Advanced Functional Materials, 2019, v. 29, n. 14, p. N.PAG, doi. 10.1002/adfm.201807613
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- Article
Coherent spin qubit shuttling through germanium quantum dots.
- Published in:
- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-49358-y
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- Article
Bottom-up assembly of metallic germanium.
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- Scientific Reports, 2015, p. 12948, doi. 10.1038/srep12948
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- Article
Ballistic superconductivity and tunable π–junctions in InSb quantum wells.
- Published in:
- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-11742-4
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- Article