Works matching AU Scalvi, Luis V. A.

Results: 15

Optimization of phase formation and photocatalytic performance in TiO2 thin films through ytterbium and erbium doping in sol–gel dip-coating process.

Published in:

Journal of Solid State Electrochemistry, 2025, v. 29, n. 7, p. 2749, doi. 10.1007/s10008-025-06196-2

By:

Pedrini, Luiz F. Kaezmarek;
Escaliante, Lucas C.;
de Jesus Pereira, André Luis;
Scalvi, Luis V. A.

Publication type:

Article

Ambipolar transport in tin dioxide thin film transistors promoted by PCBM fullerene.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 23, p. 20010, doi. 10.1007/s10854-018-0131-9

By:

Boratto, Miguel H.;
Scalvi, Luis V. A.;
Goncharova, Lyudmila V.;
Fanchini, Giovanni

Publication type:

Article

Investigation of sensing properties of sol-gel processed 4 at%Sb:SnO/TiO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 1, p. 467, doi. 10.1007/s10854-017-7935-x

By:

Boratto, Miguel H.;
Ramos, Roberto A.;
Scalvi, Luis V. A.

Publication type:

Article

Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6369, doi. 10.1007/s11664-020-08416-z

By:

Kaezmarek Pedrini, Luiz F.;
Santos, Stevan B. O.;
Trino, Luciana D.;
Scalvi, Luis V. A.

Publication type:

Article

Thermal Annealing Influence on the Properties of Heterostructure Based on 2 at.%Eu Doped SnO2 and Cu1.8S.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 12, p. 7463, doi. 10.1007/s11664-018-6687-6

By:

Lima, João V. M.;
Boratto, Miguel H.;
dos Santos, Stevan B. O.;
Scalvi, Luis V. A.

Publication type:

Article

Anomalous diode behavior of Cu2S/SnO2 p–n junction.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 16, p. 21804, doi. 10.1007/s10854-021-06703-x

By:

Lima, João V. M.;
Santos, Stevan B. O.;
Silva, Rafael A.;
Boratto, Miguel H.;
Graeff, Carlos F. O.;
Scalvi, Luis V. A.

Publication type:

Article

Low-temperature ZrO2 thin films obtained by polymeric route for electronic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 18, p. 16065, doi. 10.1007/s10854-020-04171-3

By:

Boratto, Miguel H.;
Lima, João V. M.;
Scalvi, Luis V. A.;
Graeff, Carlos F. O.

Publication type:

Article

Enhancement of surface properties of sol gel tin dioxide thin films with addition of surfactant in the precursor solution.

Published in:

Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 7, p. 1, doi. 10.1007/s00339-021-04647-x

By:

Fonseca, Lucas P.;
Pedrini, Luiz F. K.;
Lima, João V. M.;
Escaliante, Lucas C.;
Santos, Stevan B. O.;
Scalvi, Luis V. A.

Publication type:

Article

Zirconium oxide film deposition properties to build transparent electronic devices in conjunction with tin dioxide.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2022, v. 36, n. 22, p. 1, doi. 10.1142/S0217979222501351

By:

Fonseca, Lucas P.;
Scalvi, Luis V. A.

Publication type:

Article

A dynamic time-temperature-dependent process for thermal oxidation of Sn leading to SnOx thin films: Impedance spectroscopy study.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2020, v. 34, n. 19, p. N.PAG, doi. 10.1142/S0217979220501842

By:

Barreira, Enzo A.;
Pedrini, Luiz F. K.;
Boratto, Miguel H.;
Scalvi, Luis V. A.

Publication type:

Article

Effects of Solution History on Sol-Gel Processed Tin-Oxide Thin-Film Transistors.

Published in:

Journal of the American Ceramic Society, 2016, v. 99, n. 12, p. 4000, doi. 10.1111/jace.14459

By:

Boratto, Miguel H.;
Scalvi, Luis V. A.;
Goncharova, Lyudmila V.;
Fanchini, Giovanni;
French, R.

Publication type:

Article

Photoluminescence of Eu3+ ion in SnO2 obtained by sol–gel.

Published in:

Journal of Materials Science, 2008, v. 43, n. 1, p. 345, doi. 10.1007/s10853-007-1610-1

By:

Morais, Evandro A.;
Scalvi, Luis V. A.;
Tabata, Américo;
De Oliveira, José B. B.;
Ribeiro, Sidney J. L.

Publication type:

Article

Decay of photo-excited conductivity of Er-doped SnO2 thin films.

Published in:

Journal of Materials Science, 2007, v. 42, n. 7, p. 2216, doi. 10.1007/s10853-006-1320-0

By:

Morais, Evandro A.;
Scalvi, Luis V. A.

Publication type:

Article

Growth of AlO thin film by oxidation of resistively evaporated Al on top of SnO, and electrical properties of the heterojunction SnO/AlO.

Published in:

Journal of Materials Science, 2011, v. 46, n. 20, p. 6627, doi. 10.1007/s10853-011-5613-6

By:

Maciel Jr., Jorge L. B.;
Floriano, Emerson A.;
Scalvi, Luis V. A.;
Ravaro, Leandro P.

Publication type:

Article

Influence of substrate temperature on the deposition of the homostructure SnO2:Sb/SnO2:Er via sol–gel dip-coating.

Published in:

Ferroelectrics, 2019, v. 545, n. 1, p. 10, doi. 10.1080/00150193.2019.1621706

By:

dos Santos, Stevan B. O.;
Lima, João V. M.;
Boratto, Miguel H.;
Scalvi, Luis V. A.

Publication type:

Article

Works matching AU Scalvi, Luis V. A.

Optimization of phase formation and photocatalytic performance in TiO<sub>2</sub> thin films through ytterbium and erbium doping in sol–gel dip-coating process.

Ambipolar transport in tin dioxide thin film transistors promoted by PCBM fullerene.

Investigation of sensing properties of sol-gel processed 4 at%Sb:SnO/TiO thin films.

Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method.

Thermal Annealing Influence on the Properties of Heterostructure Based on 2 at.%Eu Doped SnO<sub>2</sub> and Cu<sub>1.8</sub>S.

Anomalous diode behavior of Cu<sub>2</sub>S/SnO<sub>2</sub> p–n junction.

Low-temperature ZrO<sub>2</sub> thin films obtained by polymeric route for electronic applications.

Enhancement of surface properties of sol gel tin dioxide thin films with addition of surfactant in the precursor solution.

Zirconium oxide film deposition properties to build transparent electronic devices in conjunction with tin dioxide.

A dynamic time-temperature-dependent process for thermal oxidation of Sn leading to SnOx thin films: Impedance spectroscopy study.

Effects of Solution History on Sol-Gel Processed Tin-Oxide Thin-Film Transistors.

Photoluminescence of Eu<sup>3+</sup> ion in SnO<sub>2</sub> obtained by sol–gel.

Decay of photo-excited conductivity of Er-doped SnO<sub>2</sub> thin films.

Growth of AlO thin film by oxidation of resistively evaporated Al on top of SnO, and electrical properties of the heterojunction SnO/AlO.

Influence of substrate temperature on the deposition of the homostructure SnO<sub>2</sub>:Sb/SnO<sub>2</sub>:Er via sol–gel dip-coating.