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Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers.
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- Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 2, p. 275, doi. 10.1007/s00339-005-3251-z
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- Article
Computer simulation of tuned and detuned GaInNAsSb QW VCSELs for long-wavelength applications.
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- Materials Science (0137-1339), 2008, v. 26, n. 1, p. 45
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- Article
Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-µm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers.
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- Optical & Quantum Electronics, 2004, v. 36, n. 4, p. 331
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- Article
Threshold simulation of 1.3-µm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers.
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- Optical & Quantum Electronics, 2003, v. 35, n. 7, p. 675, doi. 10.1023/A:1023977203373
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- Article
ITO layer as an optical confinement for nitride edge-emitting lasers.
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- Revista Turismo & Desenvolvimento (RT&D) / Journal of Tourism & Development, 2019, n. 32, p. 147, doi. 10.24425/bpasts.2020.131834
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- Article
ITO layer as an optical confinement for nitride edge-emitting lasers.
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- Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020, v. 68, n. 1, p. 147, doi. 10.24425/bpasts.2020.131834
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- Article
Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range.
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- Bulletin of the Polish Academy of Sciences: Technical Sciences, 2015, v. 63, n. 3, p. 597, doi. 10.1515/bpasts-2015-0070
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- Article