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The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 835, doi. 10.1134/S1063785019080212
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Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate.
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- Semiconductors, 2018, v. 52, n. 16, p. 2146, doi. 10.1134/S1063782618160285
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Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.
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- Semiconductors, 2018, v. 52, n. 11, p. 1416, doi. 10.1134/S1063782618110258
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Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources.
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- Semiconductors, 2018, v. 52, n. 4, p. 462, doi. 10.1134/S1063782618040103
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GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases.
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- Semiconductors, 2018, v. 52, n. 1, p. 1, doi. 10.1134/S1063782618010219
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Directional emission from beryllium doped GaAs/AlGaAs nanowires.
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- Technical Physics Letters, 2017, v. 43, n. 9, p. 811, doi. 10.1134/S1063785017090085
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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.
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- Semiconductors, 2016, v. 50, n. 12, p. 1619, doi. 10.1134/S1063782616120186
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Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.
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- Semiconductors, 2016, v. 50, n. 11, p. 1421, doi. 10.1134/S1063782616110257
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The effect of a gas environment on the fluorescence intensity of quantum-dot composite systems.
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- Optics & Spectroscopy, 2016, v. 121, n. 3, p. 374, doi. 10.1134/S0030400X16090071
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Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy.
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- Optics & Spectroscopy, 2016, v. 120, n. 5, p. 751, doi. 10.1134/S0030400X16050076
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Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range.
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- Semiconductors, 2016, v. 50, n. 5, p. 662, doi. 10.1134/S1063782616050262
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The Effect of External Gaseous Environments on the Photoluminescence Intensity of Quantum-Dimensional Composite System.
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- Journal of Nanomaterials, 2015, p. 1, doi. 10.1155/2015/713837
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Generation of terahertz radiation by AlGaAs nanowires.
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- JETP Letters, 2015, v. 102, n. 5, p. 316, doi. 10.1134/S0021364015170129
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Photoelectric properties of an array of axial GaAs/AlGaAs nanowires.
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- Technical Physics Letters, 2015, v. 41, n. 5, p. 443, doi. 10.1134/S1063785015050077
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A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate.
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- Technical Physics Letters, 2014, v. 40, n. 7, p. 558, doi. 10.1134/S1063785014070049
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Study of the electrical properties of individual (Ga,Mn)As nanowires.
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- Semiconductors, 2014, v. 48, n. 3, p. 344, doi. 10.1134/S1063782614030075
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Raman spectra and structural peculiarities of GaAs nanowires.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 1, p. 104, doi. 10.1134/S1027451014010297
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ULTRAFAST CARRIER DYNAMICS IN GaAs NANOWIRES.
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- Lithuanian Journal of Physics, 2014, v. 54, n. 1, p. 41, doi. 10.3952/lithjphys.54110
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- Article
Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals.
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- Semiconductors, 2013, v. 47, n. 10, p. 1416, doi. 10.1134/S1063782613100266
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(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties.
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- Semiconductors, 2013, v. 47, n. 8, p. 1037, doi. 10.1134/S1063782613080058
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Optical properties of individual GaAs quantum dots embedded into AlGaAs nanowires.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2013, v. 7, n. 4, p. 622, doi. 10.1134/S1027451013040149
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Photovoltaic properties of GaAs:Be nanowire arrays.
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- Semiconductors, 2013, v. 47, n. 6, p. 808, doi. 10.1134/S1063782613060079
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Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix.
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- Semiconductors, 2012, v. 46, n. 11, p. 1460, doi. 10.1134/S1063782612110218
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Photoluminescence of single quantum wires and quantum dots.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 5, p. 722, doi. 10.1134/S1027451012060158
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Studying the formation of self-assembled (In,Mn)As quantum dots.
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- Technical Physics Letters, 2012, v. 38, n. 5, p. 460, doi. 10.1134/S1063785012050215
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Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties.
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- Semiconductors, 2011, v. 45, n. 8, p. 1049, doi. 10.1134/S1063782611080082
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Piezoelectric effect in GaAs nanowires.
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- Semiconductors, 2011, v. 45, n. 8, p. 1082, doi. 10.1134/S1063782611080215
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Fabrication of ordered GaAs nanowhiskers using electron-beam lithography.
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- Semiconductors, 2011, v. 45, n. 6, p. 822, doi. 10.1134/S1063782611060236
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Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces.
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- Semiconductors, 2011, v. 45, n. 4, p. 431, doi. 10.1134/S1063782611040191
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InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics.
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- Semiconductors, 2010, v. 44, n. 8, p. 1050, doi. 10.1134/S1063782610080178
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Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 7, p. 175, doi. 10.1002/pssr.201004185
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Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer.
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- Semiconductors, 2010, v. 44, n. 5, p. 610, doi. 10.1134/S1063782610050118
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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate.
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- Nanoscale Research Letters, 2010, v. 5, n. 2, p. 360, doi. 10.1007/s11671-009-9488-2
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The initial stage of growth of crystalline nanowhiskers.
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- Semiconductors, 2010, v. 44, n. 1, p. 112, doi. 10.1134/S1063782610010197
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Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates.
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- Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 4, p. 112, doi. 10.1002/pssr.200903057
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On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces.
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- Technical Physics, 2009, v. 54, n. 4, p. 586, doi. 10.1134/S1063784209040227
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Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.
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- Semiconductors, 2008, v. 42, n. 12, p. 1445, doi. 10.1134/S1063782608120130
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Deposition-rate dependence of the height of GaAs-nanowires.
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- Semiconductors, 2008, v. 42, n. 11, p. 1259, doi. 10.1134/S106378260811002X
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Hexagonal structures in GaAs nanowhiskers.
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- Technical Physics Letters, 2008, v. 34, n. 6, p. 538, doi. 10.1134/S1063785008060278
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Interaction of optical radiation with GaAs nanowhisker arrays.
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- Technical Physics Letters, 2007, v. 33, n. 11, p. 923, doi. 10.1134/S1063785007110090
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- Article
POLARIZED PHOTOLUMINESCENCE OF EXCITONS IN n-, p- AND UNDOPED InAs/GaAs QUANTUM DOTS.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 319
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MBE GROWTH OF GaAs NANOWHISKERS STIMULATED BY THE ADATOM DIFFUSION.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 225, doi. 10.1142/S0219581X07004626
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LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 241, doi. 10.1142/S0219581X0700464X
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INFLUENCE OF HYDROSTATIC PRESSURE ON EXCITON PHOTOLUMINESCENCE SPECTRUM OF EXCITON MOLECULES InAs/GaAs.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 249, doi. 10.1142/S0219581X07004651
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The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy.
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- Semiconductors, 2006, v. 40, n. 5, p. 587, doi. 10.1134/S1063782606050137
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The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates.
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- Semiconductors, 2005, v. 39, n. 9, p. 1053, doi. 10.1134/1.2042598
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The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System.
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- Semiconductors, 2005, v. 39, n. 7, p. 820, doi. 10.1134/1.1992641
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The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy.
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- Semiconductors, 2005, v. 39, n. 5, p. 557, doi. 10.1134/1.1923565
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Localization of Holes in an InAs/GaAs Quantum-Dot Molecule.
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- Semiconductors, 2005, v. 39, n. 1, p. 119, doi. 10.1134/1.1852659
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The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix.
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- Semiconductors, 2005, v. 39, n. 1, p. 124, doi. 10.1134/1.1852660
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