Found: 15
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Probing resonating valence bonds on a programmable germanium quantum simulator.
- Published in:
- NPJ Quantum Information, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41534-023-00727-3
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- Article
Low disorder and high valley splitting in silicon.
- Published in:
- NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-024-00826-9
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- Article
Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99%.
- Published in:
- NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-024-00813-0
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- Article
Hamiltonian phase error in resonantly driven CNOT gate above the fault-tolerant threshold.
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- NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-023-00802-9
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- Article
Front Cover: A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well (Adv. Quantum Technol. 5/2022).
- Published in:
- Advanced Quantum Technologies, 2022, v. 5, n. 5, p. 1, doi. 10.1002/qute.202270051
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- Article
A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well.
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- Advanced Quantum Technologies, 2022, v. 5, n. 5, p. 1, doi. 10.1002/qute.202100167
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- Article
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-35458-0
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- Article
Author Correction: A shuttling-based two-qubit logic gate for linking distant silicon quantum processors.
- Published in:
- 2022
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- Correction Notice
A shuttling-based two-qubit logic gate for linking distant silicon quantum processors.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33453-z
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- Publication type:
- Article
A shuttling-based two-qubit logic gate for linking distant silicon quantum processors.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33453-z
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- Article
Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p n Diodes.
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- Journal of Electronic Materials, 2015, v. 44, n. 12, p. 4676, doi. 10.1007/s11664-015-4008-x
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- Article
Reducing charge noise in quantum dots by using thin silicon quantum wells.
- Published in:
- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-36951-w
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- Article
Author Correction: Reducing charge noise in quantum dots by using thin silicon quantum wells.
- Published in:
- 2023
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- Publication type:
- Correction Notice
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology.
- Published in:
- Advanced Functional Materials, 2019, v. 29, n. 14, p. N.PAG, doi. 10.1002/adfm.201807613
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- Article
Coherent spin qubit shuttling through germanium quantum dots.
- Published in:
- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-49358-y
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- Article