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Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55024-6
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Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 2, p. 1, doi. 10.1002/pssr.202300340
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- Article
Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 9, p. 1, doi. 10.1002/pssr.202100283
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- Article
Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots.
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- Light: Science & Applications, 2021, v. 10, n. 1, p. 1, doi. 10.1038/s41377-021-00564-z
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MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications.
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- Physica Status Solidi (B), 2018, v. 255, n. 12, p. N.PAG, doi. 10.1002/pssb.201800182
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- Article