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Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film Capacitors.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300016
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- Article
CeO<sub>2</sub> Doping of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films for High Endurance Ferroelectric Memories.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101258
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- Publication type:
- Article