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Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n<sup>+</sup>–n-Si Diffusion Silicon Structures.
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- Semiconductors, 2019, v. 53, n. 4, p. 469, doi. 10.1134/S1063782619040055
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- Article
Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.
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- Semiconductors, 2013, v. 47, n. 9, p. 1180, doi. 10.1134/S1063782613090212
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- Article
Study of the layer-substrate interface in nc-Si-SiO- p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage.
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- Semiconductors, 2010, v. 44, n. 9, p. 1187, doi. 10.1134/S1063782610090150
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- Article
Au-TiB<sub> x</sub>- n-6 H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts.
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- Semiconductors, 2009, v. 43, n. 7, p. 865, doi. 10.1134/S1063782609070070
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- Article
Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts.
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- Semiconductors, 2007, v. 41, n. 10, p. 1214, doi. 10.1134/S106378260710017X
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- Article
Quadratic recombination in silicon and its influence on the bulk lifetime.
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- Semiconductors, 2007, v. 41, n. 3, p. 281, doi. 10.1134/S1063782607030074
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- Article
The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon.
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- Semiconductors, 2006, v. 40, n. 8, p. 884, doi. 10.1134/S1063782606080045
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- Article
Excitonic photoluminescence of silicon quantum-well structures.
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- Semiconductors, 2006, v. 40, n. 8, p. 941, doi. 10.1134/S1063782606080136
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- Article
Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.
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- Semiconductors, 2005, v. 39, n. 10, p. 1122, doi. 10.1134/1.2085257
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- Article
A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density.
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- Semiconductors, 2005, v. 39, n. 9, p. 1096, doi. 10.1134/1.2042606
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- Article
On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures.
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- Semiconductors, 2004, v. 38, n. 5, p. 550, doi. 10.1134/1.1755890
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- Article
Electronic Structure of Intrinsic Point Defects in Perovskite-Type Crystals.
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- Physica Status Solidi (B), 1986, v. 137, n. 1, p. 187, doi. 10.1002/pssb.2221370121
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- Article
Exciton Luminescence in Semiconductors. Surface Recombination and Space-Charge-Layer Effects.
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- Physica Status Solidi (B), 1978, v. 88, n. 2, p. 797, doi. 10.1002/pssb.2220880247
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- Article
X-ray propagation through single crystals in an anomalous scattering range and determination of permittivity tensor components by transmission experiments.
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- XRS: X-ray Spectrometry, 2003, v. 32, n. 1, p. 3, doi. 10.1002/xrs.605
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- Article
Space charge region recombination in highly efficient silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 1, p. 10, doi. 10.15407/spqeo27.01.010
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- Article
Space charge region recombination, non-radiative exciton recombination and the band-narrowing effect in high-efficiency silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 127, doi. 10.15407/spqeo26.02.127
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- Article
Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination in the space charge region.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 5, doi. 10.15407/spqeo26.01.005
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Experimental investigation and theoretical modeling of textured silicon solar cells with rear metallization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 3, p. 331, doi. 10.15407/spqeo25.03.331
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Simulation and characterization of planar high-efficiency back contact silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 319, doi. 10.15407/spqeo24.03.319
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Influence of the reagents' ratio on photoelectric and optical properties of perovskite films for photovoltaics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 295, doi. 10.15407/spqeo24.03.295
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- Article
Key parameters of textured silicon solar cells of 26.6% photoconversion efficiency.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 175, doi. 10.15407/spqeo24.02.175
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Influence of the quantum dots bandgap and their dispersion on the loss of luminescent quanta.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 155, doi. 10.15407/spqeo23.02.155
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Key parameters of commercial silicon solar cells with rear metallization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 277, doi. 10.15407/spqeo22.03.277
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Photoconverter with luminescent concentrator. Matrix material.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 80, doi. 10.15407/spqeo22.01.80
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- Article
Impact of semiconductor quantum dots bandgap on reabsorption in luminescent concentrator.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 58, doi. 10.15407/spqeo21.01.058
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Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 5, doi. 10.15407/spqeo21.01.005
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- Article
Photoconductivity relaxation and electron transport in macroporous silicon structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 475, doi. 10.15407/spqeo20.04.475
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- Article
Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley-Read-Hall lifetimes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 34, doi. 10.15407/spqeo20.01.034
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- Article
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au-Ti-Pd-n<sup>+</sup>-n-n<sup>+</sup>-Si in IMPATT diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 366, doi. 10.15407/spqeo19.04.366
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- Article
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley-Read-Hall lifetimes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 334, doi. 10.15407/spqeo19.04.334
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- Article
Luminescent converter of solar light into electrical energy. Review.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 229, doi. 10.15407/spqeo19.03.229
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Analysis of the silicon solar cells efficiency. Type of doping and level optimization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 67, doi. 10.15407/spqeo19.01.067
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- Article
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 464, doi. 10.15407/spqeo18.04.464
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Structural and electrical-physical properties of the ohmic contacts based on palladium to n<sup>+</sup>-n-n<sup>++</sup>-n<sup>+++</sup>-InP.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 391, doi. 10.15407/spqeo18.04.391
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Ohmic contacts based on Pd to indium phosphide Gunn diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 317, doi. 10.15407/spqeo18.03.317
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- Article
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 259, doi. 10.15407/spqeo18.03.259
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- Article
New formalism for self-consistent parameters optimization of highly efficient solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 134
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- Article
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n<sup>+</sup> -GaN ohmic contacts.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 313
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- Article
Analysis of features of recombination mechanisms in silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 14
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- Article
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n<sup>+</sup>-n doping step.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 1
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- Article
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 289
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- Article
Role of dislocations in formation of ohmic contacts to heavily doped n-Si.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 99
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- Article
Lateral multijunction photovoltaic cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 1, p. 1
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- Article
Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 351
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- Article
Temperature dependence of contact resistance of Au-Ti-Pd<sub>2</sub>Si-n<sup>+</sup>-Si ohmic contacts.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 436, doi. 10.15407/spqeo13.04.436
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- Article
The study of solar cells with back side contacts at low illumination.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 348, doi. 10.15407/spqeo13.04.348
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- Article
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 1, p. 1, doi. 10.15407/spqeo11.01.001
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- Article
Modeling of photoconversion efficiency for hydrogenated amorphous Si p-i-n structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 60
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- Article
Photoconductivity in macroporous silicon with regular structure of macropores.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 72
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- Article
Experimental study and theoretical analysis of photoelectric characteristics of Al<sub>x</sub>Ga<sub>1-x</sub>As--p-GaAs--n -GaAs -based photoconverters with relief interfaces.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 72, doi. 10.15407/spqeo8.01.072
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- Article