Works matching AU Sachenko, A. V.

Results: 75

Optimization of Vertical Acceptance of a Magnet Mirror.

Published in:

Technical Physics Letters, 2023, v. 49, p. S384, doi. 10.1134/S1063785023900868

By:

Sachenko, V. D.;
Antonov, A. S.

Publication type:

Article

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 469, doi. 10.1134/S1063782619040055

By:

Belyaev, A. E.;
Boltovets, N. S.;
Klad'ko, V. P.;
Safryuk-Romanenko, N. V.;
Lubchenko, A. I.;
Sheremet, V. N.;
Shynkarenko, V. V.;
Slepova, A. S.;
Pilipenko, V. A.;
Petlitskaya, T. V.;
Pilipchuk, A. S.;
Konakova, R. V.;
Sachenko, A. V.

Publication type:

Article

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1180, doi. 10.1134/S1063782613090212

By:

Sachenko, A. V.;
Belyaev, A. E.;
Boltovets, N. S.;
Zhilyaev, Yu. V.;
Kapitanchuk, L. M.;
Klad’ko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Naumov, A. V.;
Panteleev, V. N.;
Sheremet, V. N.

Publication type:

Article

Study of the layer-substrate interface in nc-Si-SiO- p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage.

Published in:

Semiconductors, 2010, v. 44, n. 9, p. 1187, doi. 10.1134/S1063782610090150

By:

Venger, E. F.;
Kirillova, S. I.;
Korsunska, N. E.;
Stara, T. R.;
Khomenkova, L. Yu.;
Sachenko, A. V.;
Goldstein, Y.;
Savir, E.;
Jedrzejewski, J.

Publication type:

Article

Au-TiB x- n-6 H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts.

Published in:

Semiconductors, 2009, v. 43, n. 7, p. 865, doi. 10.1134/S1063782609070070

By:

Ageev, O. A.;
Belyaev, A. E.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, P. M.;
Milenin, V. V.;
Sachenko, A. V.

Publication type:

Article

Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1214, doi. 10.1134/S106378260710017X

By:

Sachenko, A. V.;
Gorban, A. P.;
Kostylyov, V. P.;
Serba, A. A.;
Sokolovskyi, I. O.

Publication type:

Article

Quadratic recombination in silicon and its influence on the bulk lifetime.

Published in:

Semiconductors, 2007, v. 41, n. 3, p. 281, doi. 10.1134/S1063782607030074

By:

Sachenko, A. V.;
Gorban, A. P.;
Kostylev, V. P.;
Sokolovskiĭ, I. O.

Publication type:

Article

The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 884, doi. 10.1134/S1063782606080045

By:

Sachenko, A. V.;
Gorban, A. P.;
Kostylyov, V. P.;
Sokolovsky, I. O.

Publication type:

Article

Excitonic photoluminescence of silicon quantum-well structures.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 941, doi. 10.1134/S1063782606080136

By:

Sachenko, A. V..;
Korbutyak, D. V.;
Kryuchenko, Yu. V.;
Kupchak, I. M.

Publication type:

Article

Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1122, doi. 10.1134/1.2085257

By:

Berezhinskiı, L. I.;
Venger, E. F.;
Matyash, I. E.;
Sachenko, A. V.;
Serdega, B. K.

Publication type:

Article

A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1096, doi. 10.1134/1.2042606

By:

Sachenko, A. V.;
Kryuchenko, Yu. V.

Publication type:

Article

On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 550, doi. 10.1134/1.1755890

By:

Sachenko, A. V.;
Gorban', A. P.;
Kostylyov, V. P.

Publication type:

Article

Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures.

Published in:

Semiconductors, 2001, v. 35, n. 12, p. 1383, doi. 10.1134/1.1427976

By:

Sachenko, A. V.;
Kaganovich, É. B.;
Manoılov, É. G.;
Svechnikov, S. V.

Publication type:

Article

Long-term relaxation of the photovoltage in a heteroepitaxial structure.

Published in:

Technical Physics Letters, 1997, v. 23, n. 6, p. 430, doi. 10.1134/1.1261702

By:

Shekhovtsov, L. V.;
Semenova, G. N.;
Venger, E. F.;
Sachenko, A. V.;
Sadof’ev, Yu. G.

Publication type:

Article

Optimized electron-optical system of a static mass-spectrometer for simultaneous isotopic and chemical analysis.

Published in:

Technical Physics, 2016, v. 61, n. 1, p. 114, doi. 10.1134/S1063784216010096

By:

Gall', L.;
Masyukevich, S.;
Sachenko, V.;
Gall', N.

Publication type:

Article

Simulation of daytime variations in the characteristics of a-Si:H solar cells.

Published in:

Technical Physics, 2013, v. 58, n. 11, p. 1625, doi. 10.1134/S106378421311011X

By:

Kryuchenko, Yu. V.;
Sachenko, A. V.;
Bobyl’, A. V.;
Kostylev, V. P.;
Sokolovskyi, I. O.;
Terukov, E. I.;
Verbitskii, V. N.;
Nikolaev, Yu. A.

Publication type:

Article

Annual dependences of generated power and electrical energy for a-Si:H-based solar cells.

Published in:

Technical Physics, 2013, v. 58, n. 11, p. 1632, doi. 10.1134/S1063784213110121

By:

Kryuchenko, Yu. V.;
Sachenko, A. V.;
Bobyl’, A. V.;
Kostylev, V. P.;
Sokolovskyi, I. O.;
Terukov, E. I.;
Verbitskii, V. N.;
Nikolaev, Yu. A.

Publication type:

Article

Development of a dedicated isotope mass spectrometer for the noninvasive diagnostics of humans infected with Helicobacter Pylori.

Published in:

Technical Physics, 2013, v. 58, n. 6, p. 836, doi. 10.1134/S1063784213060066

By:

Blashenkov, N.;
Sheshenya, E.;
Solov'ev, S.;
Gall', L.;
Sachenko, V.;
Zarutskii, I.;
Gall', N.

Publication type:

Article

Identities Relating the Angular and Coordinate Components of Axial Aberration in the Fringing Field of the Magnetic Sector of Static Mass Analyzer.

Published in:

Journal of Analytical Chemistry, 2022, v. 77, n. 13, p. 1669, doi. 10.1134/S1061934822130068

By:

Sachenko, V. D.;
Antonov, A. S.

Publication type:

Article

Correctness Criterion for Calculating Ion Trajectories in Edge Magnetic Fields of Static Sector Mass Analyzers.

Published in:

Journal of Analytical Chemistry, 2021, v. 76, n. 13, p. 1525, doi. 10.1134/S1061934821130128

By:

Sachenko, V. D.;
Antonov, A. S.

Publication type:

Article

Correctness Criterion for Calculating Ion Trajectories in Edge Magnetic Fields of Static Sector Mass Analyzers.

Published in:

Journal of Analytical Chemistry, 2021, v. 76, n. 12, p. 1525, doi. 10.1134/S1061934821130128

By:

Sachenko, V. D.;
Antonov, A. S.

Publication type:

Article

On Projective Connection of Optically Conjugate Points of Static Mass Analyzers.

Published in:

Journal of Analytical Chemistry, 2020, v. 75, n. 14, p. 1825, doi. 10.1134/S1061934820140130

By:

Sachenko, V. D.

Publication type:

Article

Geometric Aspects of Optimizing the Acceptance of a Static Mass Analyzer.

Published in:

Journal of Analytical Chemistry, 2020, v. 75, n. 14, p. 1781, doi. 10.1134/S1061934820140129

By:

Sachenko, V. D.;
Antonov, A. S.;
Gall, L. N.;
Berdnikov, A. S.

Publication type:

Article

Optimization of Vertical Acceptance of the Static Mass Analyzer.

Published in:

Journal of Analytical Chemistry, 2020, v. 75, n. 13, p. 1660, doi. 10.1134/S1061934820130122

By:

Sachenko, V. D.;
Antonov, A. S.;
Gall, L. N.;
Berdnikov, A. S.

Publication type:

Article

An Ion-Optical Circuit of a Small-Sized Mass-Spectrometer for the Isotope Analysis of Hydrogen–Helium Mixtures.

Published in:

Journal of Analytical Chemistry, 2020, v. 75, n. 13, p. 1693, doi. 10.1134/S1061934820130134

By:

Sachenko, V. D.;
Yakushev, E. M.;
Nazarenko, L. M.;
Antonov, A. S.;
Gall, L. N.;
Gall, N. R.;
Berdnikov, A. S.

Publication type:

Article

Controlling the Resolution of Static Mass Spectrometers Using Intermediate Slit Diaphragms.

Published in:

Journal of Analytical Chemistry, 2019, v. 74, n. 14, p. 1405, doi. 10.1134/S1061934819140028

By:

Antonov, A. S.;
Berdnikov, A. S.;
Gall, L. N.;
Sachenko, V. D.

Publication type:

Article

Exciton Luminescence in Semiconductors. Surface Recombination and Space-Charge-Layer Effects.

Published in:

Physica Status Solidi (B), 1978, v. 88, n. 2, p. 797, doi. 10.1002/pssb.2220880247

By:

Sachenko, A. V.;
Tyagai, V. A.;
Kundzich, A. G.

Publication type:

Article

The Effect of Base Thickness on Photoconversion Efficiency in Textured Silicon-Based Solar Cells.

Published in:

Technical Physics Letters, 2018, v. 44, n. 10, p. 873, doi. 10.1134/S1063785018100139

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Bobyl, A. V.;
Vlasyuk, V. N.;
Sokolovskyi, I. O.;
Konoplev, G. A.;
Terukov, E. I.;
Shvarts, M. Z.;
Evstigneev, M.

Publication type:

Article

A specialized isotope mass spectrometer for noninvasive diagnostics of Helicobacter pylori infection in human beings.

Published in:

Technical Physics Letters, 2013, v. 39, n. 5, p. 431, doi. 10.1134/S1063785013050040

By:

Blashenkov, N.;
Sheshenya, E.;
Solov'ev, S.;
Sachenko, V.;
Gall, L.;
Zarutskii, I.;
Gall, N.

Publication type:

Article

Electronic Structure of Intrinsic Point Defects in Perovskite-Type Crystals.

Published in:

Physica Status Solidi (B), 1986, v. 137, n. 1, p. 187, doi. 10.1002/pssb.2221370121

By:

Fisenko, A. V.;
Prosandeev, S. A.;
Sachenko, V. P.

Publication type:

Article

Space charge region recombination in highly efficient silicon solar cells.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 1, p. 10, doi. 10.15407/spqeo27.01.010

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Evstigneev, M.

Publication type:

Article

Space charge region recombination, non-radiative exciton recombination and the band-narrowing effect in high-efficiency silicon solar cells.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 127, doi. 10.15407/spqeo26.02.127

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Vlasiuk, V. M.;
Sokolovskyi, I. O.;
Evstigneev, M.;
Dvernikov, D. F.;
Korkishko, R. M.;
Chernenko, V. V.

Publication type:

Article

Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination in the space charge region.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 5, doi. 10.15407/spqeo26.01.005

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Vlasiuk, V. M.;
Sokolovskyi, I. O.;
Evstigneev, M. A.;
Slusar, T. V.;
Chernenko, V. V.

Publication type:

Article

Experimental investigation and theoretical modeling of textured silicon solar cells with rear metallization.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 3, p. 331, doi. 10.15407/spqeo25.03.331

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Korkishko, R. M.;
Vlasiuk, V. M.;
Sokolovskyi, I. O.;
Evstigneev, M.;
Olikh, O. Ya.;
Shkrebtii, A. I.;
Dvernikov, B. F.;
Chernenko, V. V.

Publication type:

Article

Simulation and characterization of planar high-efficiency back contact silicon solar cells.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 319, doi. 10.15407/spqeo24.03.319

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Korkishko, R. M.;
Vlasiuk, V. M.;
Sokolovskyi, I. O.;
Dvernikov, B. F.;
Chernenko, V. V.;
Evstigneev, M. A.

Publication type:

Article

Influence of the reagents' ratio on photoelectric and optical properties of perovskite films for photovoltaics.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 295, doi. 10.15407/spqeo24.03.295

By:

Kostylyov, V. P.;
Sachenko, A. V.;
Sokolovskyi, I. O.;
Vlasiuk, V. M.;
Torchyniuk, P. V.;
V'yunov, O. I.;
Belous, A. G.;
Shkrebtii, A. I.

Publication type:

Article

Key parameters of textured silicon solar cells of 26.6% photoconversion efficiency.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 175, doi. 10.15407/spqeo24.02.175

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Korkishko, R. M.;
Vlasyuk, V. M.;
Sokolovskyi, I. O.;
Dvernikov, B. F.;
Chernenko, V. V.;
Evstigneev, M.

Publication type:

Article

Influence of the quantum dots bandgap and their dispersion on the loss of luminescent quanta.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 155, doi. 10.15407/spqeo23.02.155

By:

Kulish, M. R.;
Kostylyov, V. P.;
Sachenko, A. V.;
Sokolovskyi, I. O.;
Shkrebtii, A. I.

Publication type:

Article

Key parameters of commercial silicon solar cells with rear metallization.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 277, doi. 10.15407/spqeo22.03.277

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Vlasyuk, V. M.;
Korkishko, R. M.;
Sokolovskyi, I. O.;
Chernenko, V. V.;
Dvernikov, B. F.;
Serba, O. A.;
Evstigneev, M. A.

Publication type:

Article

Photoconverter with luminescent concentrator. Matrix material.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 80, doi. 10.15407/spqeo22.01.80

By:

Kulish, M. R.;
Kostylyov, V. P.;
Sachenko, A. V.;
Sokolovskyi, I. O.;
Shkrebtii, A. I.

Publication type:

Article

Impact of semiconductor quantum dots bandgap on reabsorption in luminescent concentrator.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 58, doi. 10.15407/spqeo21.01.058

By:

Shkrebtii, A. I.;
Sachenko, A. V.;
Sokolovskyi, I. O.;
Kostylyov, V. P.;
Kulish, M. R.

Publication type:

Article

Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review).

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 5, doi. 10.15407/spqeo21.01.005

By:

Sachenko, A. V.;
Konakova, R. V.;
Belyaev, A. E.

Publication type:

Article

Photoconductivity relaxation and electron transport in macroporous silicon structures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 475, doi. 10.15407/spqeo20.04.475

By:

Karachevtseva, L. A.;
Onyshchenko, V. F.;
Sachenko, A. V.

Publication type:

Article

Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley-Read-Hall lifetimes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 34, doi. 10.15407/spqeo20.01.034

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Vlasiuk, V. M.;
Korkishko, R. M.;
Sokolovskyi, I. O.;
Chernenko, V. V.;
Evstigneev, M. A.

Publication type:

Article

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au-Ti-Pd-n+-n-n+-Si in IMPATT diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 366, doi. 10.15407/spqeo19.04.366

By:

Romanets, P. M.;
Belyaev, A. E.;
Sachenko, A. V.;
Boltovets, N. S.;
Basanets, V. V.;
Konakova, R. V.;
Slipokurov, V. S.;
Khodin, A. A.;
Pilipenko, V. A.;
Shynkarenko, V. V.;
Kudryk, Ya. Ya.

Publication type:

Article

The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley-Read-Hall lifetimes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 334, doi. 10.15407/spqeo19.04.334

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Vlasiuk, V. M.;
Sokolovskyi, I. O.;
Evstigneev, M. A.

Publication type:

Article

Luminescent converter of solar light into electrical energy. Review.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 229, doi. 10.15407/spqeo19.03.229

By:

Kulish, M. R.;
Kostylyov, V. P.;
Sachenko, A. V.;
Sokolovskyi, I. O.;
Khomenko, D. V.;
Shkrebtii, A. I.

Publication type:

Article

Analysis of the silicon solar cells efficiency. Type of doping and level optimization.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 67, doi. 10.15407/spqeo19.01.067

By:

Sachenko, A. V.;
Kostylyov, V. P.;
Gerasymenko, M. V.;
Korkishko, R. M.;
Kulish, M. R.;
Slipchenko, M. I.;
Sokolovskyi, I. O.;
Chernenko, V. V.

Publication type:

Article

Influence of nanostructured ITO films on surface recombination processes in silicon solar cells.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 464, doi. 10.15407/spqeo18.04.464

By:

Kostylyov, V. P.;
Sachenko, A. V.;
Serba, O. A.;
Slusar, T. V.;
Vlasyuk, V. M.;
Tytarenko, P. O.;
Chernenko, V. V.

Publication type:

Article

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 391, doi. 10.15407/spqeo18.04.391

By:

Belyaev, A. E.;
Boltovets, N. A.;
Bobyl, A. B.;
Kladko, V. P.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Nasyrov, M. U.;
Sachenko, A. V.;
Slipokurov, V. S.;
Slepova, A. S.;
Safryuk, N. V.;
Gudymenko, A. I.;
Shynkarenko, V. V.

Publication type:

Article