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Space charge region recombination in highly efficient silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 1, p. 10, doi. 10.15407/spqeo27.01.010
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- Article
Space charge region recombination, non-radiative exciton recombination and the band-narrowing effect in high-efficiency silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 127, doi. 10.15407/spqeo26.02.127
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Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination in the space charge region.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 5, doi. 10.15407/spqeo26.01.005
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Experimental investigation and theoretical modeling of textured silicon solar cells with rear metallization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 3, p. 331, doi. 10.15407/spqeo25.03.331
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Simulation and characterization of planar high-efficiency back contact silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 319, doi. 10.15407/spqeo24.03.319
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Influence of the reagents' ratio on photoelectric and optical properties of perovskite films for photovoltaics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 295, doi. 10.15407/spqeo24.03.295
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Key parameters of textured silicon solar cells of 26.6% photoconversion efficiency.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 175, doi. 10.15407/spqeo24.02.175
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Influence of the quantum dots bandgap and their dispersion on the loss of luminescent quanta.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 155, doi. 10.15407/spqeo23.02.155
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Key parameters of commercial silicon solar cells with rear metallization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 277, doi. 10.15407/spqeo22.03.277
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Photoconverter with luminescent concentrator. Matrix material.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 80, doi. 10.15407/spqeo22.01.80
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Impact of semiconductor quantum dots bandgap on reabsorption in luminescent concentrator.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 58, doi. 10.15407/spqeo21.01.058
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- Article
Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 5, doi. 10.15407/spqeo21.01.005
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- Article
Photoconductivity relaxation and electron transport in macroporous silicon structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 475, doi. 10.15407/spqeo20.04.475
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Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley-Read-Hall lifetimes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 34, doi. 10.15407/spqeo20.01.034
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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au-Ti-Pd-n<sup>+</sup>-n-n<sup>+</sup>-Si in IMPATT diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 366, doi. 10.15407/spqeo19.04.366
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The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley-Read-Hall lifetimes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 334, doi. 10.15407/spqeo19.04.334
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- Article
Luminescent converter of solar light into electrical energy. Review.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 229, doi. 10.15407/spqeo19.03.229
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Analysis of the silicon solar cells efficiency. Type of doping and level optimization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 67, doi. 10.15407/spqeo19.01.067
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Influence of nanostructured ITO films on surface recombination processes in silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 464, doi. 10.15407/spqeo18.04.464
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Structural and electrical-physical properties of the ohmic contacts based on palladium to n<sup>+</sup>-n-n<sup>++</sup>-n<sup>+++</sup>-InP.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 391, doi. 10.15407/spqeo18.04.391
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Ohmic contacts based on Pd to indium phosphide Gunn diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 317, doi. 10.15407/spqeo18.03.317
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Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 259, doi. 10.15407/spqeo18.03.259
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New formalism for self-consistent parameters optimization of highly efficient solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 134
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Analysis of features of recombination mechanisms in silicon solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 14
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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n<sup>+</sup>-n doping step.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 1
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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n<sup>+</sup> -GaN ohmic contacts.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 313
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Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 289
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Role of dislocations in formation of ohmic contacts to heavily doped n-Si.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 99
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Lateral multijunction photovoltaic cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 1, p. 1
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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 351
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- Article
Temperature dependence of contact resistance of Au-Ti-Pd<sub>2</sub>Si-n<sup>+</sup>-Si ohmic contacts.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 436, doi. 10.15407/spqeo13.04.436
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The study of solar cells with back side contacts at low illumination.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 348, doi. 10.15407/spqeo13.04.348
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Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 1, p. 1, doi. 10.15407/spqeo11.01.001
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Modeling of photoconversion efficiency for hydrogenated amorphous Si p-i-n structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 60
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- Article
Photoconductivity in macroporous silicon with regular structure of macropores.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 72
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Experimental study and theoretical analysis of photoelectric characteristics of Al<sub>x</sub>Ga<sub>1-x</sub>As--p-GaAs--n -GaAs -based photoconverters with relief interfaces.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 72, doi. 10.15407/spqeo8.01.072
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Exciton effects in band-edge electroluminescence of silicon barrier structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 1
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- Article
A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 4, p. 487
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- Article
Cortical unit activity in cats during conditioned inhibition.
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- Neuroscience & Behavioral Physiology, 1988, v. 18, n. 5, p. 419, doi. 10.1007/BF01193889
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Unit responses of the auditory cortex of waking cats at rest and after defensive conditioning.
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- Neuroscience & Behavioral Physiology, 1981, v. 11, n. 4, p. 406, doi. 10.1007/BF01184211
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- Article
The Effect of Base Thickness on Photoconversion Efficiency in Textured Silicon-Based Solar Cells.
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 873, doi. 10.1134/S1063785018100139
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- Article
A specialized isotope mass spectrometer for noninvasive diagnostics of Helicobacter pylori infection in human beings.
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- Technical Physics Letters, 2013, v. 39, n. 5, p. 431, doi. 10.1134/S1063785013050040
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- Article
Long-term relaxation of the photovoltage in a heteroepitaxial structure.
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- Technical Physics Letters, 1997, v. 23, n. 6, p. 430, doi. 10.1134/1.1261702
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Modulation of the Spike Activity of Neocortex Neurons during a Conditioned Reflex.
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- Neuroscience & Behavioral Physiology, 2000, v. 30, n. 6, p. 635, doi. 10.1023/A:1026690531090
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- Article
Optimized electron-optical system of a static mass-spectrometer for simultaneous isotopic and chemical analysis.
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- Technical Physics, 2016, v. 61, n. 1, p. 114, doi. 10.1134/S1063784216010096
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- Article
Simulation of daytime variations in the characteristics of <i>a</i>-Si:H solar cells.
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- Technical Physics, 2013, v. 58, n. 11, p. 1625, doi. 10.1134/S106378421311011X
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- Article
Annual dependences of generated power and electrical energy for <i>a</i>-Si:H-based solar cells.
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- Technical Physics, 2013, v. 58, n. 11, p. 1632, doi. 10.1134/S1063784213110121
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- Article
Development of a dedicated isotope mass spectrometer for the noninvasive diagnostics of humans infected with Helicobacter Pylori.
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- Technical Physics, 2013, v. 58, n. 6, p. 836, doi. 10.1134/S1063784213060066
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- Article
Electronic Structure of Intrinsic Point Defects in Perovskite-Type Crystals.
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- Physica Status Solidi (B), 1986, v. 137, n. 1, p. 187, doi. 10.1002/pssb.2221370121
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Exciton Luminescence in Semiconductors. Surface Recombination and Space-Charge-Layer Effects.
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- Physica Status Solidi (B), 1978, v. 88, n. 2, p. 797, doi. 10.1002/pssb.2220880247
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- Article