Found: 5
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Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110136
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- Article
Quadratic Optical Effects in a GaN/In<sub>x</sub>Ga<sub>1−x</sub>N/GaN Quantum Dot-Quantum Well (QD-QW) Subjected to an External Electric Field.
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- Journal of Electronic Materials, 2022, v. 51, n. 10, p. 5735, doi. 10.1007/s11664-022-09800-7
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- Article
Effect of Natural Sensitizers Anchoring to Nanoporous TiO2 on Performance of Dye-Sensitized Solar Cells.
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- Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4797, doi. 10.1007/s11664-021-09010-7
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- Article
Simultaneous effect of the capped matrix and the geometric factors of CdS/ZnSe spheroidal quantum dots on the linear and nonlinear optical properties.
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- Optical & Quantum Electronics, 2023, v. 55, n. 3, p. 1, doi. 10.1007/s11082-023-04545-x
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- Article
Mathematical modeling of mixed convective MHD Falkner-Skan squeezed Sutterby multiphase flow with non-Fourier heat flux theory and porosity.
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- Applied Mathematics & Mechanics, 2023, v. 44, n. 11, p. 2005, doi. 10.1007/s10483-023-3044-5
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- Article