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High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions.
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- Acta Physica Polonica: A, 2016, v. 129, n. 1A, p. A-126, doi. 10.12693/APhysPolA.129.A-126
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Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1526, doi. 10.1002/pssa.201000975
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- Article
Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy.
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- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600710
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- Article
Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells.
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- Physica Status Solidi (B), 2012, v. 249, n. 3, p. 476, doi. 10.1002/pssb.201100392
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- Article