TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING.
- Published in:
- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 279, doi. 10.1142/S0219581X07004729
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- Publication type:
- Article
Works by SINIS, V. P.
Results: 8
1
2
Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures.
- Published in:
- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 192, doi. 10.1002/pssb.200672548
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- Publication type:
- Article
3
THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures.
- Published in:
- Physica Status Solidi (B), 2003, v. 235, n. 2, p. 293, doi. 10.1002/pssb.200301571
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- Publication type:
- Article
4
THz lasing of SiGe/Si quantum-well structures due to shallow acceptors.
- Published in:
- Physica Status Solidi (B), 2003, v. 235, n. 1, p. 135, doi. 10.1002/pssb.200301536
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- Publication type:
- Article
5
Lateral Transport in Strained SiGe Quantum Wells Doped with Boron.
- Published in:
- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 495, doi. 10.1002/(SICI)1521-3951(199901)211:1<495::AID-PSSB495>3.0.CO;2-8
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- Publication type:
- Article
6
Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure.
- Published in:
- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 35, doi. 10.1002/pssb.2221980105
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- Publication type:
- Article
7
Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium.
- Published in:
- Journal of Experimental & Theoretical Physics, 1999, v. 88, n. 1, p. 51, doi. 10.1134/1.558763
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- Publication type:
- Article
8
Negative Differential Conductivity in InAs/AlSb Superlattices.
- Published in:
- Acta Physica Polonica: A, 2011, v. 119, n. 2, p. 210
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- Publication type:
- Article