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AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell.
- Published in:
- International Journal of Electronics & Telecommunications, 2014, v. 60, n. 2, p. 151, doi. 10.2478/eletel-2014-0018
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- Article
Concept of the InGaAs Plasmonic Waveguide for Quantum Cascade Laser Applications.
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- Advances in Electrical & Electronic Engineering, 2021, v. 19, n. 4, p. 350, doi. 10.15598/aeee.v19i4.4099
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- Article
DIFFRACTION PROPERTIES AND APPLICATION OF 3D POLYMER WOODPILE PHOTONIC CRYSTAL STRUCTURE.
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- Advances in Electrical & Electronic Engineering, 2019, v. 17, n. 3, p. 367, doi. 10.15598/aeee.v17i3.3329
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- Article
COMPOSITION RELATED ELECTRICAL ACTIVE DEFECT STATES OF INGAAS AND GAASN.
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- Advances in Electrical & Electronic Engineering, 2017, v. 15, n. 1, p. 114, doi. 10.15598/aeee.v15i1.2023
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- Article
Heat Dissipation Schemes in A1InAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance.
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- Photonics, 2017, v. 4, n. 4, p. 47, doi. 10.3390/photonics4040047
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- Article
Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy.
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- Materials (1996-1944), 2022, v. 15, n. 21, p. 7621, doi. 10.3390/ma15217621
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- Article
Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures.
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- Optica Applicata, 2020, v. 50, n. 2, p. 289, doi. 10.37190/oa200212
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- Article
The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE.
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- Optica Applicata, 2020, v. 50, n. 2, p. 251, doi. 10.37190/oa200208
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- Article
Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications.
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- Optica Applicata, 2016, v. 46, n. 2, p. 241, doi. 10.5277/oa160208
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- Article
Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures.
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- Optica Applicata, 2016, v. 46, n. 2, p. 255, doi. 10.5277/oa160210
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- Article
Characterization of A<sup>III</sup> B<sup>V</sup> epitaxial layers by scanning spreading resistance microscopy.
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- Optica Applicata, 2011, v. 41, n. 2, p. 281
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- Article
New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors.
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- Optica Applicata, 2009, v. 39, n. 4, p. 739
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- Article
Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region.
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- Optica Applicata, 2007, v. 37, n. 4, p. 415
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- Article
AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region.
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- Optica Applicata, 2005, v. 35, n. 3, p. 645
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- Article
A cross-sectional scanning capacitance microscopy characterization of GaAs based solar cell structures.
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- Crystal Research & Technology, 2017, v. 52, n. 6, p. n/a, doi. 10.1002/crat.201700019
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- Article
Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE.
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- Energies (19961073), 2022, v. 15, n. 9, p. N.PAG, doi. 10.3390/en15093036
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- Article
Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell.
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- Energies (19961073), 2021, v. 14, n. 15, p. 4651, doi. 10.3390/en14154651
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- Article