Works by SAMSONENKO, YU. B.

Results: 37

POLARIZED PHOTOLUMINESCENCE OF EXCITONS IN n-, p- AND UNDOPED InAs/GaAs QUANTUM DOTS.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 319

By:

FÜRST, J.;
PASCHER, H.;
SHALYGIN, V. A.;
VOROBJEV, L. E.;
FIRSOV, D. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
USTINOV, V. M.

Publication type:

Article

MBE GROWTH OF GaAs NANOWHISKERS STIMULATED BY THE ADATOM DIFFUSION.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 225, doi. 10.1142/S0219581X07004626

By:

DUBROVSKII, V. G.;
SOSHNIKOV, I. P.;
TONKIKH, A. A.;
USTINOV, V. M.;
CIRLIN, G. E.;
SAMSONENKO, YU. B.

Publication type:

Article

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 241, doi. 10.1142/S0219581X0700464X

By:

FIRSOV, D. A.;
VOROBJEV, L. E.;
BARZILOVICH, M. A.;
YU. PANEVIN, V.;
MIKHAYLOV, I. V.;
FEDOSOV, N. K.;
SHALYGIN, V. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
ZHUKOV, A. E.;
PIKHTIN, N. A.;
TARASOV, I. S.;
USTINOV, V. M.;
JULIEN, F. H.;
SEKOWSKI, M.;
HANNA, S.;
SEILMEIER, A.

Publication type:

Article

INFLUENCE OF HYDROSTATIC PRESSURE ON EXCITON PHOTOLUMINESCENCE SPECTRUM OF EXCITON MOLECULES InAs/GaAs.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 249, doi. 10.1142/S0219581X07004651

By:

GAISIN, V. A.;
NOVIKOV, B. V.;
SOKOLOV, A. S.;
SHTROM, I. V.;
CHUGUNOV, V. A.;
TALALAEV, V. G.;
ZAKHAROV, N. D.;
CIRLIN, G. E.;
SAMSONENKO, YU. B.;
TONKIKH, A. A.;
USTINOV, V. P.

Publication type:

Article

Heteroepitaxial growth of InAs on Si: a new type of quantum dot.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815

By:

Cyrlin, G. E.;
Petrov, V. N.;
Dubrovskii, V. G.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Golubok, A. O.;
Masalov, S. A.;
Komyak, N. I.;
Ustinov, V. M.;
Egorov, A. Yu.;
Kovsh, A. R.;
Maximov, M. V.;
Tsatsul’nikov, A. F.;
Volovik, B. V.;
Zhukov, A. E.;
Kop’ev, P. S.;
Ledentsov, N. N.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires.

Published in:

Technical Physics Letters, 2019, v. 45, n. 8, p. 835, doi. 10.1134/S1063785019080212

By:

Grigorieva, N. R.;
Shtrom, I. V.;
Grigoriev, R. V.;
Soshnikov, I. P.;
Reznik, R. R.;
Samsonenko, Yu. B.;
Sibirev, N. V.;
Cirlin, G. E.

Publication type:

Article

Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 7, p. 175, doi. 10.1002/pssr.201004185

By:

Novikov, B. V.;
Serov, S. Yu.;
Filosofov, N. G.;
Shtrom, I. V.;
Talalaev, V. G.;
Vyvenko, O. F.;
Ubyivovk, E. V.;
Samsonenko, Yu. B.;
Bouravleuv, A. D.;
Soshnikov, I. P.;
Sibirev, N. V.;
Cirlin, G. E.;
Dubrovskii, V. G.

Publication type:

Article

Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates.

Published in:

Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 4, p. 112, doi. 10.1002/pssr.200903057

By:

Cirlin, G. E.;
Dubrovskii, V. G.;
Soshnikov, I. P.;
Sibirev, N. V.;
Samsonenko, Yu. B.;
Bouravleuv, A. D.;
Harmand, J. C.;
Glas, F.

Publication type:

Article

On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature.

Published in:

Physica Status Solidi (B), 2004, v. 241, n. 7, p. R30, doi. 10.1002/pssb.200409042

By:

Dubrovskii, V. G.;
Soshnikov, I. P.;
Cirlin, G. E.;
Tonkikh, A. A.;
Samsonenko, Yu. B.;
Sibirev, N. V.;
Ustinov, V. M.

Publication type:

Article

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2146, doi. 10.1134/S1063782618160285

By:

Shtrom, I. V.;
Kotlyar, K. P.;
Filosofov, N. G.;
Serov, A. Yu.;
Krizhkov, D. I.;
Samsonenko, Yu. B.;
Ilkiev, I. V.;
Reznik, R. R.;
Agekyan, V. F.;
Cirlin, G. E.

Publication type:

Article

Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1416, doi. 10.1134/S1063782618110258

By:

Cirlin, G. E.;
Reznik, R. R.;
Samsonenko, Yu. B.;
Khrebtov, A. I.;
Kotlyar, K. P.;
Ilkiv, I. V.;
Soshnikov, I. P.;
Kirilenko, D. A.;
Kryzhanovskaya, N. V.

Publication type:

Article

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 462, doi. 10.1134/S1063782618040103

By:

Cirlin, G. E.;
Reznik, R. R.;
Shtrom, I. V.;
Khrebtov, A. I.;
Samsonenko, Yu. B.;
Kukushkin, S. A.;
Kasama, T.;
Akopian, N.;
Leonardo, L.

Publication type:

Article

InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1050, doi. 10.1134/S1063782610080178

By:

Talalaev, V. G.;
Senichev, A. V.;
Novikov, B. V.;
Tomm, J. W.;
Elsaesser, T.;
Zakharov, N. D.;
Werner, P.;
Gösele, U.;
Samsonenko, Yu. B.;
Cirlin, G. E.

Publication type:

Article

Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 610, doi. 10.1134/S1063782610050118

By:

Dementyev, P. A.;
Dunaevskii, M. S.;
Samsonenko, Yu. B.;
Cirlin, G. E.;
Titkov, A. N.

Publication type:

Article

The initial stage of growth of crystalline nanowhiskers.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 112, doi. 10.1134/S1063782610010197

By:

Sibirev, N. V.;
Nazarenko, M. B.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Dubrovskii, V. G.

Publication type:

Article

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1445, doi. 10.1134/S1063782608120130

By:

Samsonenko, Yu. B.;
Cirlin, G. É;
Egorov, V. A;
Polyakov, N. K.;
Ulin, V. P.;
Dubrovskii, V. G.

Publication type:

Article

Deposition-rate dependence of the height of GaAs-nanowires.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1259, doi. 10.1134/S106378260811002X

By:

Sibirev, N. V.;
Dubrovskii, V. G.;
Cirlin, G. E.;
Egorov, V. A.;
Samsonenko, Yu. B.;
Ustinov, V. M.

Publication type:

Article

The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 587, doi. 10.1134/S1063782606050137

By:

Tonkikh, A. A.;
Cirlin, G. E.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Ustinov, V. M.;
Zakharov, N. D.;
Werner, P.;
Talalaev, V. G.;
Novikov, B. V.

Publication type:

Article

The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1053, doi. 10.1134/1.2042598

By:

Sobolev, M. M.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Tonkikh, A. A.

Publication type:

Article

The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 820, doi. 10.1134/1.1992641

By:

Musikhin, Yu. G.;
Cirlin, G. E.;
Dubrovskiĭ, V. G.;
Samsonenko, Yu. B.;
Tonkikh, A. A.;
Bert, N. A.;
Ustinov, V. M.

Publication type:

Article

The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2005, v. 39, n. 5, p. 557, doi. 10.1134/1.1923565

By:

Cirlin, G. E.;
Dubrovski&ibreve;, V. G.;
Sibirev, N. V.;
Soshnikov, I. P.;
Samsonenko, Yu. B.;
Tonkikh, A. A.;
Ustinov, V. M.

Publication type:

Article

Localization of Holes in an InAs/GaAs Quantum-Dot Molecule.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 119, doi. 10.1134/1.1852659

By:

Sobolev, M. M.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Tonkikh, A. A.;
Musikhin, Yu. G.

Publication type:

Article

The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 124, doi. 10.1134/1.1852660

By:

Samsonenko, Yu. B.;
Cirlin, G. E.;
Tonkikh, A. A.;
Polyakov, N. K.;
Kryzhanovskaya, N. V.;
Ustinov, V. M.;
Vorob'ev, L. E.;
Firsov, D. A.;
Shalygin, V. A.;
Zakharov, N. D.;
Werner, P.;
Andreev, A.

Publication type:

Article

Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique.

Published in:

Semiconductors, 2004, v. 38, n. 10, p. 1217, doi. 10.1134/1.1808832

By:

Tonkikh, A. A.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Soshnikov, P.;
Ustinov, V. M.

Publication type:

Article

Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate.

Published in:

Semiconductors, 2004, v. 38, n. 3, p. 329, doi. 10.1134/1.1682338

By:

Dubrovski&icaron;, V. G.;
Musikhin, Yu. G.;
Cirlin, G. É.;
Egorov, V. A.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Tonkikh, A. A.;
Kryzhanovskaya, N. V.;
Bert, N. A.;
Ustinov, V. M.

Publication type:

Article

Room-Temperature 1.5–1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1406, doi. 10.1134/1.1634662

By:

Tonkikh, A. A.;
Tsyrlin, G. E.;
Talalaev, V. G.;
Novikov, B. V.;
Egorov, V. A.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Ustinov, V. M.;
Zakharov, N. D.;
Werner, P.

Publication type:

Article

Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System.

Published in:

Semiconductors, 2003, v. 37, n. 7, p. 855, doi. 10.1134/1.1592864

By:

Dubrovskiı, V. G.;
Egorov, V. A.;
Cirlin, G. E.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Kryzhanovskaya, N. V.;
Tsatsul’nikov, A. F.;
Ustinov, V. M.

Publication type:

Article

Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 559, doi. 10.1134/1.1575361

By:

Sizov, D. S.;
Samsonenko, Yu. B.;
Tsyrlin, G. E.;
Polyakov, N. K.;
Egorov, V. A.;
Tonkikh, A. A.;
Zhukov, A. E.;
Mikhrin, S. S.;
Vasil’ev, A. P.;
Musikhin, Yu. G.;
Tsatsul’nikov, A. F.;
Ustinov, V. M.;
Ledentsov, N. N.

Publication type:

Article

On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces.

Published in:

Technical Physics, 2009, v. 54, n. 4, p. 586, doi. 10.1134/S1063784209040227

By:

Sibirev, N. V.;
Dubrovskii, V. G.;
Arshanskii, E. B.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Ustinov, V. M.

Publication type:

Article

System for recording and analysis of reflection high-energy electron diffraction patterns.

Published in:

Technical Physics, 1997, v. 42, n. 8, p. 956, doi. 10.1134/1.1258761

By:

Gur’yanov, G. M.;
Demidov, V. N.;
Korneeva, N. P.;
Petrov, V. N.;
Samsonenko, Yu. B.;
Tsyrlin, G. É.

Publication type:

Article

ULTRAFAST CARRIER DYNAMICS IN GaAs NANOWIRES.

Published in:

Lithuanian Journal of Physics, 2014, v. 54, n. 1, p. 41, doi. 10.3952/lithjphys.54110

By:

Trukhin, V. N.;
Buravlev, A. D.;
Dhaka, V.;
Cirlin, G. E.;
Mustafin, I. A.;
Kaliteevski, M. A.;
Lipsanen, H.;
Samsonenko, Yu. B.

Publication type:

Article

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 2, p. 360, doi. 10.1007/s11671-009-9488-2

By:

Cirlin, G. E.;
Bouravleuv, A. D.;
Soshnikov, I. P.;
Samsonenko, Yu. B.;
Dubrovskii, V. G.;
Arakcheeva, E. M.;
Tanklevskaya, E. M.;
Werner, P.

Publication type:

Article

Hexagonal structures in GaAs nanowhiskers.

Published in:

Technical Physics Letters, 2008, v. 34, n. 6, p. 538, doi. 10.1134/S1063785008060278

By:

Soshnikov, I. P.;
Cirlin, G. E.;
Sibirev, N. V.;
Dubrovskii, V. G.;
Samsonenko, Yu. B.;
Litvinov, D.;
Gerthsen, D.

Publication type:

Article

Interaction of optical radiation with GaAs nanowhisker arrays.

Published in:

Technical Physics Letters, 2007, v. 33, n. 11, p. 923, doi. 10.1134/S1063785007110090

By:

Neucheva, O. A.;
Evstrapov, A. A.;
Samsonenko, Yu. B.;
Cirlin, G. E.

Publication type:

Article

Peculiarities of the MBE Growth of Nanowhiskers on GaAs(100) Substrates.

Published in:

Technical Physics Letters, 2004, v. 30, n. 9, p. 765, doi. 10.1134/1.1804590

By:

Soshnikov, I. P.;
Tonkikh, A. A.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
V. M. Ustinov

Publication type:

Article

The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System.

Published in:

Technical Physics Letters, 2004, v. 30, n. 4, p. 272, doi. 10.1134/1.1748597

By:

Dubrovskii, V.G.;
Kryzhanovskaya, N.V.;
Ustinov, V.M.;
Tonkikh, A.A.;
Egorov, V.A.;
Polyakov, N.K.;
Samsonenko, Yu. B.;
Cirlin, G.E.

Publication type:

Article

Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface.

Published in:

Technical Physics Letters, 2000, v. 26, n. 9, p. 781, doi. 10.1134/1.1315492

By:

Tsyrlin, G. É.;
Samsonenko, Yu. B.;
Petrov, V. N.;
Polyakov, N. K.;
Egorov, V. A.;
Masalov, S. A.;
Gorbenko, O. M.;
Golubok, A. O.;
Soshnikov, I. P.;
Ustinov, V. M.

Publication type:

Article