Found: 21
Select item for more details and to access through your institution.
Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures.
- Published in:
- Scientific Reports, 2018, v. 8, n. 1, p. 1, doi. 10.1038/s41598-018-30950-4
- By:
- Publication type:
- Article
Plug&Play Fiber‐Coupled 73 kHz Single‐Photon Source Operating in the Telecom O‐Band.
- Published in:
- Advanced Quantum Technologies, 2020, v. 3, n. 6, p. 1, doi. 10.1002/qute.202000018
- By:
- Publication type:
- Article
Front Cover: Plug&Play Fiber‐Coupled 73 kHz Single‐Photon Source Operating in the Telecom O‐Band (Adv. Quantum Technol. 6/2020).
- Published in:
- Advanced Quantum Technologies, 2020, v. 3, n. 6, p. 1, doi. 10.1002/qute.202070061
- By:
- Publication type:
- Article
High‐Purity Triggered Single‐Photon Emission from Symmetric Single InAs/InP Quantum Dots around the Telecom C‐Band Window.
- Published in:
- Advanced Quantum Technologies, 2020, v. 3, n. 2, p. N.PAG, doi. 10.1002/qute.201900082
- By:
- Publication type:
- Article
Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 4, p. 1, doi. 10.1002/pssa.201700455
- By:
- Publication type:
- Article
Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer.
- Published in:
- Materials (1996-1944), 2022, v. 15, n. 3, p. 1071, doi. 10.3390/ma15031071
- By:
- Publication type:
- Article
Towards Interband Cascade lasers on InP Substrate.
- Published in:
- Materials (1996-1944), 2022, v. 15, n. 1, p. 60, doi. 10.3390/ma15010060
- By:
- Publication type:
- Article
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate.
- Published in:
- Materials (1996-1944), 2021, v. 14, n. 18, p. 5221, doi. 10.3390/ma14185221
- By:
- Publication type:
- Article
Interband Cascade Active Region with Ultra-Broad Gain in the Mid-Infrared Range.
- Published in:
- Materials (1996-1944), 2021, v. 14, n. 5, p. 1112, doi. 10.3390/ma14051112
- By:
- Publication type:
- Article
InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window.
- Published in:
- Materials (1996-1944), 2021, v. 14, n. 4, p. 759, doi. 10.3390/ma14040759
- By:
- Publication type:
- Article
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy.
- Published in:
- Materials (1996-1944), 2020, v. 13, n. 14, p. 3109, doi. 10.3390/ma13143109
- By:
- Publication type:
- Article
Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells.
- Published in:
- Optica Applicata, 2013, v. 43, n. 1, p. 53, doi. 10.5277/oa130107
- By:
- Publication type:
- Article
Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots.
- Published in:
- Optica Applicata, 2009, v. 39, n. 4, p. 923
- By:
- Publication type:
- Article
Photoreflectance study of Al<sub>0.45</sub>Ga<sub>0.55</sub>As/GaAs superlattice: optical transitions at the miniband Γ and Π points.
- Published in:
- Optica Applicata, 2009, v. 39, n. 4, p. 897
- By:
- Publication type:
- Article
Microphotoreflectance spectroscopy -- a modulation technique with high spatial resolution.
- Published in:
- Optica Applicata, 2007, v. 37, n. 4, p. 439
- By:
- Publication type:
- Article
Thermoreflectance and micro-Raman measurements of the temperature distributions in broad contact laser diodes.
- Published in:
- Optica Applicata, 2005, v. 35, n. 3, p. 479
- By:
- Publication type:
- Article
Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-78462-4
- By:
- Publication type:
- Article
Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers.
- Published in:
- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-1183-x
- By:
- Publication type:
- Article
Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range.
- Published in:
- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-1104-z
- By:
- Publication type:
- Article
Optical characteristics of cavity structures with Al<sub>0.2</sub>Ga<sub>0.8</sub>As/Al<sub>0.9</sub>Ga<sub>0.1</sub>As distributed Bragg reflectors and In<sub>0.37</sub>Ga<sub>0.63</sub>As quantum dots as the active region.
- Published in:
- Przegląd Elektrotechniczny, 2023, v. 2023, n. 10, p. 294, doi. 10.15199/48.2023.10.62
- By:
- Publication type:
- Article
Distributed Bragg Reflector–Mediated Excitation of InAs/InP Quantum Dots Emitting in the Telecom C‐Band.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 10, p. 1, doi. 10.1002/pssr.202300063
- By:
- Publication type:
- Article