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Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 7, p. 2667, doi. 10.1007/s11664-014-3115-4
By:
- Arnatkevičiūtė, A.;
- Reklaitis, I.;
- Kadys, A.;
- Malinauskas, T.;
- Stanionytė, S.;
- Juška, G.;
- Rzheutski, M.;
- Tomašiūnas, R.
Publication type:
Article
Relationship of quantum-well potential profile and luminescence of InGaN/GaN heterostructures.
Published in:
Journal of Applied Spectroscopy, 2013, v. 80, n. 2, p. 220, doi. 10.1007/s10812-013-9749-9
By:
- Lutsenko, E.;
- Rzheutski, M.;
- Pavlovskii, V.;
- Yablonskii, G.;
- Reklaitis, I.;
- Kadys, A.;
- Žukauskas, A.
Publication type:
Article
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al<sub>2</sub>O<sub>3</sub>.
Published in:
Semiconductors, 2018, v. 52, n. 16, p. 2107, doi. 10.1134/S1063782618160170
By:
- Lutsenko, E. V.;
- Rzheutski, M. V.;
- Vainilovich, A. G.;
- Svitsiankou, I. E.;
- Shulenkova, V. A.;
- Muravitskaya, E. V.;
- Alexeev, A. N.;
- Petrov, S. I.;
- Yablonskii, G. P.
Publication type:
Article
Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures.
Published in:
Journal of Applied Spectroscopy, 2016, v. 82, n. 6, p. 956, doi. 10.1007/s10812-016-0211-7
By:
- Lutsenko, E.;
- Rzheutski, M.;
- Pavlovskii, V.;
- Alyamani, A.;
- Aljohenii, M.;
- Aljerwii, A.;
- Mauder, C.;
- Reuters, B.;
- Kalisch, H.;
- Heuken, M.;
- Vescan, A.
Publication type:
Article

Found: 4

Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN.

Relationship of quantum-well potential profile and luminescence of InGaN/GaN heterostructures.

MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al<sub>2</sub>O<sub>3</sub>.

Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures.