Works by Rusavsky, A. V.

Results: 8

On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering.
Published in:
Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6421, doi. 10.1007/s10854-022-07814-9
By:
- Vasin, A. V.;
- Rusavsky, A. V.;
- Mamykin, S. V.;
- Nikolenko, A. S.;
- Strelchuk, V. V.;
- Yatskiv, R.;
- Grym, J.;
- Gudimenko, A. I.;
- Kladko, V. P.;
- Tyagulskyy, I. P.;
- Lorinčik, J.;
- Elantyev, I.;
- Nazarov, A. N.
Publication type:
Article
EPR study of paramagnetic centers in SiO2:C:Zn nanocomposites obtained by infiltration of fumed silica with luminescent Zn(acac)2 solution.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 124, doi. 10.15407/spqeo24.02.124
By:
- Savchenko, D. V.;
- Memon, V. S.;
- Vasin, A. V.;
- Kysil, D. V.;
- Rusavsky, A. V.;
- Kuz, O. P.;
- Gareeva, F. M.;
- Kalabukhova, E. N.
Publication type:
Article
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 63
By:
- Vasin, A. V.;
- Ishikawa, Y.;
- Rusavsky, A. V.;
- Nazarov, A. N.;
- Konchitz, A. A.;
- Lysenko, V. S.
Publication type:
Article
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
By:
- Tiagulskyi, S. I.;
- Nazarov, A. N.;
- Gordienko, S. O.;
- Vasin, A. V.;
- Rusavsky, A. V.;
- Nazarova, T. M.;
- Gomeniuk, Yu. V.;
- Rudko, G. V.;
- Lysenko, V. S.;
- Rebohle, L.;
- Voelskow, M.;
- Skorupa, W.;
- Koshka, Y.
Publication type:
Article
Graphene layers fabricated from the Ni/a-SiC bilayer precursor.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 322
By:
- Nazarov, A. N.;
- Vasin, A. V.;
- Gordienko, S. O.;
- Lytvyn, P. M.;
- Strelchuk, V. V.;
- Nikolenko, A. S.;
- Stubrov, Yu. Yu.;
- Hirov, A. S.;
- Rusavsky, A. V.;
- Popov, V. P.;
- Lysenko, V. S.
Publication type:
Article
Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n+-ZnO/n-Si Heterostructure.
Published in:
Journal of Electronic Materials, 2023, v. 52, n. 5, p. 3112, doi. 10.1007/s11664-023-10276-2
By:
- Gomeniuk, Y. V.;
- Gomeniuk, Y. Y.;
- Kondratenko, S. V.;
- Rudenko, T. E.;
- Vasin, A. V.;
- Rusavsky, A. V.;
- Slobodian, O. M.;
- Tyagulskyy, I. P.;
- Kostylyov, V. P.;
- Vlasiuk, V. M.;
- Tiagulskyi, S. I.;
- Yatskiv, R.;
- Lysenko, V. S.;
- Nazarov, A. N.
Publication type:
Article
The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 572, doi. 10.1134/1.1923567
By:
- Vasin, A. V.;
- Rusavsky, A. V.;
- Lysenko, V. S.;
- Nazarov, A. N.;
- Kushnirenko, V. I.;
- Starik, S. P.;
- Stepanov, V. G.
Publication type:
Article
Impedance spectroscopy of single graphene layer at gas adsorption.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 9, p. 1941, doi. 10.1002/pssa.201532101
By:
- Skryshevsky, V. A.;
- Milovanov, Yu. S.;
- Gavrilchenko, I. V.;
- Tiagulskyi, S. I.;
- Rusavsky, A. V.;
- Lysenko, V. S.;
- Nazarov, A. N.
Publication type:
Article

Works by Rusavsky, A. V.

On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering.

EPR study of paramagnetic centers in SiO<sub>2</sub>:C:Zn nanocomposites obtained by infiltration of fumed silica with luminescent Zn(acac)<sub>2</sub> solution.

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si<sub>1-x</sub>C<sub>x</sub>:H films.

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Graphene layers fabricated from the Ni/a-SiC bilayer precursor.

Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n<sup>+</sup>-ZnO/n-Si Heterostructure.

The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.

Impedance spectroscopy of single graphene layer at gas adsorption.