Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 3, p. 241, doi. 10.1007/s11664-004-0186-7

By:

• Polyakov, A. Y.;
• Smirnov, N. B.;
• Govorkov, A. V.;
• Kim, Jihyun;
• Ren, F.;
• Thaler, G. T.;
• Frazier, R. M.;
• Gila, B. P.;
• Abernathy, C. R.;
• Pearton, S. J.;
• Buyanova, I. A.;
• Rudko, G. Y.;
• Chen, W. M.;
• C.-C. Pan, W. M.;
• G.-T. Chen, W. M.;
• J.-I. Chyi, W. M.;
• Zavada, J. M.

Publication type:

Article