Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.Published in:Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 119, doi. 10.1007/s10854-007-9337-yBy:McNeill, D. W.;Bhattacharya, S.;Wadsworth, H.;Ruddell, F. H.;Mitchell, S. J. N.;Armstrong, B. M.;Gamble, H. S.Publication type:Article