Works by Rud', Yu. V.
Results: 140
Photoelectric properties of In/CdP<sub>2</sub> surface barrier structures.
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- Journal of Applied Spectroscopy, 2010, v. 77, n. 1, p. 148, doi. 10.1007/s10812-010-9307-7
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- Article
Photosensitive structure from the tetragonal modification of ZnP<sub>2</sub> single crystals.
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- Journal of Applied Spectroscopy, 2009, v. 76, n. 2, p. 220, doi. 10.1007/s10812-009-9160-8
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- Article
Photosensitive n-Ox/ p-CuIn<sub>3</sub>Se<sub>5</sub> heterostructures.
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- Journal of Applied Spectroscopy, 2006, v. 73, n. 6, p. 874, doi. 10.1007/s10812-006-0169-y
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- Article
Photoelectric Properties of p‐GaSe/n‐CdGa<sub>2</sub>S<sub>4</sub> Heterostructures.
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- Journal of Applied Spectroscopy, 2003, v. 70, n. 4, p. 573, doi. 10.1023/A:1026154632486
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- Article
Photosensitivity of Semiconductor–Protein Systems.
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- Technical Physics, 2000, v. 45, n. 2, p. 255
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- Article
Photosensitivity of GaAs : N(GaP : N)/GaAs(GaP) heterojunctions in linearly polarized radiation.
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- Technical Physics, 1999, v. 44, n. 6, p. 732, doi. 10.1134/1.1259456
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- Article
Photoelectric properties of ITO/p[sup +]–p[sup -]-InP solar cells in linearly polarized light.
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- Technical Physics, 1998, v. 43, n. 5, p. 546, doi. 10.1134/1.1259036
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- Article
Photovoltaic properties of semiconductor-protein heterocontacts.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 328
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- Article
Photoluminescence of II–IV–V[sub 2] and I–III–VI[sub 2] crystals passivated in a sulfide solution.
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- Technical Physics Letters, 1998, v. 24, n. 11, p. 875, doi. 10.1134/1.1262298
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- Article
ZnGeP[sub 2] heterocontact with layered III-VI semiconductors.
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- Technical Physics Letters, 1997, v. 23, n. 6, p. 415
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- Article
Growth of tetragonal CdP<sub>2</sub> single crystals and the properties of barriers on their basis.
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- Technical Physics, 2010, v. 55, n. 4, p. 517, doi. 10.1134/S1063784210040146
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- Article
Polarization photosensitivity of Schottky barriers on monoclinic ZnAs<sub>2</sub> crystals.
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- Technical Physics, 2009, v. 54, n. 11, p. 1597, doi. 10.1134/S1063784209110073
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- Article
Photosensitivity and Schottky barrier height in Au- n-GaAs structures.
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- Technical Physics, 2008, v. 53, n. 1, p. 134, doi. 10.1134/S1063784208010258
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- Article
H<sub>2</sub>O/CuIn<sub>3</sub>Se<sub>5</sub> Photoelectrochemical Cells: Fabrication and Properties.
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- Technical Physics, 2005, v. 50, n. 3, p. 367, doi. 10.1134/1.1884739
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- Article
Polarimetric sensors on the basis of CdS/CuInSe<sub>2</sub> heterocontact: Influence of the heat treatment on photosensitivity spectrum.
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- International Journal of Modern Physics: Conference Series, 2016, v. 41, p. -1, doi. 10.1142/S2010194516601447
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- Article
Development and photoelectric properties of In/ p-AgAsS surface-barrier structures.
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- Semiconductors, 2010, v. 44, n. 8, p. 1025, doi. 10.1134/S1063782610080129
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- Article
Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.
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- Semiconductors, 2010, v. 44, n. 3, p. 354, doi. 10.1134/S1063782610030140
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- Article
Photosensitivity of n-CdS/ p-CdTe heterojunctions obtained by chemical surface deposition of CdS.
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- Semiconductors, 2010, v. 44, n. 3, p. 318, doi. 10.1134/S1063782610030085
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- Article
Growth of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(FeIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> single crystals and properties of photoelectric structures on their basis.
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- Semiconductors, 2010, v. 44, n. 1, p. 37, doi. 10.1134/S1063782610010057
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- Article
Discovery of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(MnIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> solid solutions and fabrication of photosensitive structures based on them.
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- Semiconductors, 2010, v. 44, n. 1, p. 45, doi. 10.1134/S1063782610010070
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- Article
Growing FeIn<sub>2</sub>S<sub>4</sub> single crystals and fabrication of photosensitive structures on their basis.
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- Semiconductors, 2009, v. 43, n. 11, p. 1510, doi. 10.1134/S1063782609110190
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- Article
Photosensitive structures on single crystals of MnIn<sub>2</sub>S<sub>4</sub>: Preparation and properties.
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- Semiconductors, 2009, v. 43, n. 11, p. 1506, doi. 10.1134/S1063782609110189
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- Article
Electrical properties of In<sub>2</sub>Se<sub>3</sub> single crystals and photosensitivity of Al/In<sub>2</sub>Se<sub>3</sub> Schottky barriers.
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- Semiconductors, 2009, v. 43, n. 9, p. 1138, doi. 10.1134/S1063782609090061
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Photosensitive structures based on ZnP<sub>2</sub> single crystals of monoclinic and tetragonal modifications: Fabrication and properties.
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- Semiconductors, 2009, v. 43, n. 7, p. 858, doi. 10.1134/S1063782609070069
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Photoelectrochemical cells based on In<sub>2</sub>S<sub>3</sub> single crystals.
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- Semiconductors, 2009, v. 43, n. 4, p. 425, doi. 10.1134/S1063782609040046
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Photoelectrochemical cells based on ternary compounds CuIn<sub>2 n + 1</sub>Se<sub>3 n + 2</sub> ( n = 3–6).
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- Semiconductors, 2009, v. 43, n. 3, p. 374, doi. 10.1134/S106378260903021X
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Photosensitivity of the Ni- n-GaAs Schottky barriers.
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- Semiconductors, 2009, v. 43, n. 1, p. 29, doi. 10.1134/S1063782609010072
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- Article
Properties of CuIn<sub>3</sub>Se<sub>5</sub> crystals and In/CuIn<sub>3</sub>Se<sub>5</sub> structures.
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- Semiconductors, 2007, v. 41, n. 11, p. 1307, doi. 10.1134/S106378260711005X
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Photosensitivity of the structures on the Cu(In,Ga)(S,Se)<sub>2</sub> films obtained by thermal treatment in the S and Se vapors.
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- Semiconductors, 2007, v. 41, n. 10, p. 1173, doi. 10.1134/S1063782607100089
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Fabrication and properties of point structures formed on n-InSe single crystals.
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- Semiconductors, 2007, v. 41, n. 10, p. 1170, doi. 10.1134/S1063782607100077
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Cadmium-free thin-film Cu(In,Ga)Se<sub>2</sub>/(In<sub>2</sub>S<sub>3</sub>) heterophotoelements: Fabrication and properties.
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- Semiconductors, 2007, v. 41, n. 8, p. 973, doi. 10.1134/S1063782607080210
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Fabrication and photoelectric properties of oxide/CuIn<sub>5</sub>Se<sub>8</sub> heterojunctions.
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- Semiconductors, 2007, v. 41, n. 2, p. 155, doi. 10.1134/S1063782607020078
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Photoelectric cells based on n-Ox/n-InSe heterojunctions: fabrication and properties.
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- Semiconductors, 2006, v. 40, n. 11, p. 1321, doi. 10.1134/S1063782606110121
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- Article
Surface-barrier In/ p-CuGa<sub>3</sub>Te<sub>5</sub> and In/ p-CuGa<sub>5</sub>Te<sub>8</sub> structures: Fabrication and properties.
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- Semiconductors, 2006, v. 40, n. 9, p. 1028, doi. 10.1134/S1063782606090077
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- Article
Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se<sub>2</sub> Heterostructures and Exposed to γ-ray Radiation.
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- Semiconductors, 2005, v. 39, n. 12, p. 1406, doi. 10.1134/1.2140314
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Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases.
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- Semiconductors, 2005, v. 39, n. 11, p. 1294, doi. 10.1134/1.2128453
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- Article
Photoelectric Properties of Surface-Barrier Structures Based on Zn<sub>2 – 2x</sub>Cu<sub>x</sub>In<sub>x</sub>Se<sub>2</sub> Films Obtained by Selenization.
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- Semiconductors, 2005, v. 39, n. 9, p. 1035, doi. 10.1134/1.2042594
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- Article
Photoconversion in n-ZnO:Al/PdPc/p-CuIn<sub>3</sub>Se<sub>5</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 4, p. 402, doi. 10.1134/1.1900252
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- Article
Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures.
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- Semiconductors, 2005, v. 39, n. 4, p. 409, doi. 10.1134/1.1900254
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- Article
The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se<sub>2</sub> Structures.
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- Semiconductors, 2005, v. 39, n. 3, p. 331, doi. 10.1134/1.1882796
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Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures.
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- Semiconductors, 2005, v. 39, n. 2, p. 218, doi. 10.1134/1.1864202
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Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se<sub>2</sub> Heterojunctions.
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- Semiconductors, 2005, v. 39, n. 2, p. 202, doi. 10.1134/1.1864199
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Photoelectric Properties of ZnO/CuPc/Si Structures.
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- Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065
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Photosensitive Structures Based on HgGa<sub>2</sub>S<sub>4</sub> Single Crystals: Preparation and Properties.
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- Semiconductors, 2004, v. 38, n. 11, p. 1291, doi. 10.1134/1.1823061
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Fabrication and Photosensitivity of Heterojunctions Based on CuIn<sub>3</sub>Se<sub>5</sub> Crystals.
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- Semiconductors, 2004, v. 38, n. 10, p. 1192, doi. 10.1134/1.1808827
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Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties.
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- Semiconductors, 2004, v. 38, n. 9, p. 1018, doi. 10.1134/1.1797478
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- Article
Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions.
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- Semiconductors, 2004, v. 38, n. 4, p. 393, doi. 10.1134/1.1734664
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Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium.
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- Semiconductors, 2004, v. 38, n. 4, p. 406, doi. 10.1134/1.1734667
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Photosensitive Structures Based on the Compound AgIn[sub 11]S[sub 17].
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- Semiconductors, 2004, v. 38, n. 2, p. 165, doi. 10.1134/1.1648369
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Structures Based on Cu(Ag)In[sub n]S[sub m] Semiconductor Compounds.
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- Semiconductors, 2004, v. 38, n. 2, p. 197, doi. 10.1134/1.1648376
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