Works by Rud', V. Yu.

Results: 140

Photoelectric properties of In/CdP2 surface barrier structures.
Published in:
Journal of Applied Spectroscopy, 2010, v. 77, n. 1, p. 148, doi. 10.1007/s10812-010-9307-7
By:
- Bodnar’, I. V.;
- Osipova, M. A.;
- Rud’, V. Yu.;
- Rud’, Yu. V.;
- Bairamov, B. Kh.
Publication type:
Article
Photosensitive structure from the tetragonal modification of ZnP2 single crystals.
Published in:
Journal of Applied Spectroscopy, 2009, v. 76, n. 2, p. 220, doi. 10.1007/s10812-009-9160-8
By:
- Bodnar, I. V.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Vaipolin, A. A.;
- Osipova, M. A.;
- Ushakova, T. N.
Publication type:
Article
Photosensitive n-Ox/ p-CuIn3Se5 heterostructures.
Published in:
Journal of Applied Spectroscopy, 2006, v. 73, n. 6, p. 874, doi. 10.1007/s10812-006-0169-y
By:
- Bodnar', I. V.;
- Vaipolin, A. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.;
- Ushakova, T. N.
Publication type:
Article
Photoelectric Properties of p‐GaSe/n‐CdGa2S4 Heterostructures.
Published in:
Journal of Applied Spectroscopy, 2003, v. 70, n. 4, p. 573, doi. 10.1023/A:1026154632486
By:
- Bodnar', I. V.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Serginov, M. S.
Publication type:
Article
Photosensitivity of Semiconductor–Protein Systems.
Published in:
Technical Physics, 2000, v. 45, n. 2, p. 255
By:
- Rud’, V. Yu.;
- Rud’, Yu. V.;
- Shpunt, V. Kh.
Publication type:
Article
Photosensitivity of GaAs : N(GaP : N)/GaAs(GaP) heterojunctions in linearly polarized radiation.
Published in:
Technical Physics, 1999, v. 44, n. 6, p. 732, doi. 10.1134/1.1259456
By:
- Ivanov-Omskiı, V. I.;
- Rud’, Yu. V.;
- Rud’, V. Yu.
Publication type:
Article
Photoelectric properties of ITO/p[sup +]–p[sup -]-InP solar cells in linearly polarized light.
Published in:
Technical Physics, 1998, v. 43, n. 5, p. 546, doi. 10.1134/1.1259036
By:
- Botnaryuk, V. M.;
- Gorchak, L. V.;
- Raevskiı, S. D.;
- Sherban, D. A.;
- Rud’, V. Yu.;
- Rud’, Yu. V.
Publication type:
Article
Photovoltaic properties of semiconductor-protein heterocontacts.
Published in:
Technical Physics Letters, 1999, v. 25, n. 4, p. 328
By:
- Rud’, V. Yu.;
- Rud’, Yu. V.;
- Shpunt, V. Kh.
Publication type:
Article
Photoluminescence of II–IV–V[sub 2] and I–III–VI[sub 2] crystals passivated in a sulfide solution.
Published in:
Technical Physics Letters, 1998, v. 24, n. 11, p. 875, doi. 10.1134/1.1262298
By:
- Bessolov, V. N.;
- Lebedev, M. V.;
- Rud’, V. Yu.;
- Rud’, Yu. V.
Publication type:
Article
ZnGeP[sub 2] heterocontact with layered III-VI semiconductors.
Published in:
Technical Physics Letters, 1997, v. 23, n. 6, p. 415
By:
- Rud’, V. Yu.;
- Rud’, Yu. V.
Publication type:
Article
Growth of tetragonal CdP2 single crystals and the properties of barriers on their basis.
Published in:
Technical Physics, 2010, v. 55, n. 4, p. 517, doi. 10.1134/S1063784210040146
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Bodnar', I. V.
Publication type:
Article
Polarization photosensitivity of Schottky barriers on monoclinic ZnAs2 crystals.
Published in:
Technical Physics, 2009, v. 54, n. 11, p. 1597, doi. 10.1134/S1063784209110073
By:
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Photosensitivity and Schottky barrier height in Au- n-GaAs structures.
Published in:
Technical Physics, 2008, v. 53, n. 1, p. 134, doi. 10.1134/S1063784208010258
By:
- Melebaev, D.;
- Melebaeva, G. D.;
- Rud’, V. Yu.;
- Rud’, Yu. V.
Publication type:
Article
H2O/CuIn3Se5 Photoelectrochemical Cells: Fabrication and Properties.
Published in:
Technical Physics, 2005, v. 50, n. 3, p. 367, doi. 10.1134/1.1884739
By:
- Bodnar, I. V.;
- Dmitrieva, E. S.;
- Rud, V. Yu.;
- Rud, Yu. V.
Publication type:
Article
Polarimetric sensors on the basis of CdS/CuInSe2 heterocontact: Influence of the heat treatment on photosensitivity spectrum.
Published in:
International Journal of Modern Physics: Conference Series, 2016, v. 41, p. -1, doi. 10.1142/S2010194516601447
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Development and photoelectric properties of In/ p-AgAsS surface-barrier structures.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1025, doi. 10.1134/S1063782610080129
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 354, doi. 10.1134/S1063782610030140
By:
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.;
- Heller, N. M.;
- Ivanov, A. G.;
- Shamanin, V. V.
Publication type:
Article
Photosensitivity of n-CdS/ p-CdTe heterojunctions obtained by chemical surface deposition of CdS.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 318, doi. 10.1134/S1063782610030085
By:
- Il'chuk, G. A.;
- Kusnezh, V. V.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Shapowal, P. Yo.;
- Petrus', R. Yu.
Publication type:
Article
Growth of the (In2S3) x(FeIn2S4)1 − x single crystals and properties of photoelectric structures on their basis.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 37, doi. 10.1134/S1063782610010057
By:
- Bodnar, I. V.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.
Publication type:
Article
Discovery of the (In2S3) x(MnIn2S4)1 − x solid solutions and fabrication of photosensitive structures based on them.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 45, doi. 10.1134/S1063782610010070
By:
- Rud, V. Yu.;
- Rud, Yu. V.;
- Osipova, M. A.;
- Bodnar, I. V.
Publication type:
Article
Growing FeIn2S4 single crystals and fabrication of photosensitive structures on their basis.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1510, doi. 10.1134/S1063782609110190
By:
- Bodnar, I. V.;
- Pavlyukovets, S. A.;
- Rud, V. Yu.;
- Rud, Yu. V.
Publication type:
Article
Photosensitive structures on single crystals of MnIn2S4: Preparation and properties.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1506, doi. 10.1134/S1063782609110189
By:
- Bodnar, I. V.;
- Rud, V. Yu.;
- Rud, Yu. V.
Publication type:
Article
Electrical properties of In2Se3 single crystals and photosensitivity of Al/In2Se3 Schottky barriers.
Published in:
Semiconductors, 2009, v. 43, n. 9, p. 1138, doi. 10.1134/S1063782609090061
By:
- Bodnar, I. V.;
- Ilchuk, G. A.;
- Petrus', R. Yu.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Serginov, M.
Publication type:
Article
Photosensitive structures based on ZnP2 single crystals of monoclinic and tetragonal modifications: Fabrication and properties.
Published in:
Semiconductors, 2009, v. 43, n. 7, p. 858, doi. 10.1134/S1063782609070069
By:
- Rud, V. Yu.;
- Rud, Yu. V.;
- Vaipolin, A. A.;
- Bodnar, I. V.;
- Osipiva, M. A.;
- Ushakova, T. N.
Publication type:
Article
Photoelectrochemical cells based on In2S3 single crystals.
Published in:
Semiconductors, 2009, v. 43, n. 4, p. 425, doi. 10.1134/S1063782609040046
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Bodnar, I. V.;
- Ushakova, T. N.
Publication type:
Article
Photoelectrochemical cells based on ternary compounds CuIn2 n + 1Se3 n + 2 ( n = 3–6).
Published in:
Semiconductors, 2009, v. 43, n. 3, p. 374, doi. 10.1134/S106378260903021X
By:
- Rud, V. Yu.;
- Rud, Yu. V.;
- Bodnar, I. V.;
- Gorbachev, D. V.;
- Ushakova, T. N.
Publication type:
Article
Photosensitivity of the Ni- n-GaAs Schottky barriers.
Published in:
Semiconductors, 2009, v. 43, n. 1, p. 29, doi. 10.1134/S1063782609010072
By:
- Melebaev, D.;
- Melebaeva, G. D.;
- Rud', V. Yu.;
- Rud', Yu. V.
Publication type:
Article
Properties of CuIn3Se5 crystals and In/CuIn3Se5 structures.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1307, doi. 10.1134/S106378260711005X
By:
- Bodnar', I. V.;
- Rud', V. Yu;
- Rud', Yu. V.
Publication type:
Article
Photosensitivity of the structures on the Cu(In,Ga)(S,Se)2 films obtained by thermal treatment in the S and Se vapors.
Published in:
Semiconductors, 2007, v. 41, n. 10, p. 1173, doi. 10.1134/S1063782607100089
By:
- Rud', V. Yu.;
- Tivanov, M. S.;
- Rud', Yu. V.;
- Gremenok, V. F.;
- Zaretskaya, E. P.;
- Zalesskiǐ, V. B.;
- Leonova, T. R.;
- Romanov, P. I.
Publication type:
Article
Fabrication and properties of point structures formed on n-InSe single crystals.
Published in:
Semiconductors, 2007, v. 41, n. 10, p. 1170, doi. 10.1134/S1063782607100077
By:
- Il'chuk, G. A.;
- Kus'nézh, V. V.;
- Petrus’, R. Yu.;
- Rud', V. Yu.;
- Rud’, Yu. V.;
- Ukrainets, V. O.
Publication type:
Article
Cadmium-free thin-film Cu(In,Ga)Se2/(In2S3) heterophotoelements: Fabrication and properties.
Published in:
Semiconductors, 2007, v. 41, n. 8, p. 973, doi. 10.1134/S1063782607080210
By:
- Zalesski, V. B.;
- Rud', V. Yu.;
- Gremenok, V. F.;
- Rud', Yu. V.;
- Leonova, T. R.;
- Kravchenko, A. V.;
- Zaretskaya, E. P.;
- Tivanov, M. S.
Publication type:
Article
Fabrication and photoelectric properties of oxide/CuIn5Se8 heterojunctions.
Published in:
Semiconductors, 2007, v. 41, n. 2, p. 155, doi. 10.1134/S1063782607020078
By:
- Bodnar', I. V.;
- Vaĭpolin, A. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Photoelectric cells based on n-Ox/n-InSe heterojunctions: fabrication and properties.
Published in:
Semiconductors, 2006, v. 40, n. 11, p. 1321, doi. 10.1134/S1063782606110121
By:
- Il'chuk, G. A.;
- Kusznezh, V. V.;
- Petrus', R. Yu.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.;
- Ukrainets, V. O.
Publication type:
Article
Surface-barrier In/ p-CuGa3Te5 and In/ p-CuGa5Te8 structures: Fabrication and properties.
Published in:
Semiconductors, 2006, v. 40, n. 9, p. 1028, doi. 10.1134/S1063782606090077
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Bodnar', I. V.
Publication type:
Article
Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se2 Heterostructures and Exposed to γ-ray Radiation.
Published in:
Semiconductors, 2005, v. 39, n. 12, p. 1406, doi. 10.1134/1.2140314
By:
- Emtsev, V. V.;
- Nikolaev, Yu. A.;
- Poloskin, D. S.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.;
- Yakushev, M. V.
Publication type:
Article
Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1294, doi. 10.1134/1.2128453
By:
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.;
- Ushakova, T. N.
Publication type:
Article
Photoelectric Properties of Surface-Barrier Structures Based on Zn2 – 2xCuxInxSe2 Films Obtained by Selenization.
Published in:
Semiconductors, 2005, v. 39, n. 9, p. 1035, doi. 10.1134/1.2042594
By:
- Rud', V. Yu.;
- Rud', Yu. V.;
- Gremenok, V. F.;
- Zaretskaya, E. P.;
- Sergeeva, O. N.
Publication type:
Article
Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 Structures.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 402, doi. 10.1134/1.1900252
By:
- Bodnar', I. V.;
- Dmitrieva, E. S.;
- Nikitin, S. E.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 409, doi. 10.1134/1.1900254
By:
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se2 Structures.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 331, doi. 10.1134/1.1882796
By:
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.
Publication type:
Article
Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures.
Published in:
Semiconductors, 2005, v. 39, n. 2, p. 218, doi. 10.1134/1.1864202
By:
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.
Publication type:
Article
Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se2 Heterojunctions.
Published in:
Semiconductors, 2005, v. 39, n. 2, p. 202, doi. 10.1134/1.1864199
By:
- Gremenok, V. F.;
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Rud, V. Yu.;
- Rud, Yu. V.
Publication type:
Article
Photoelectric Properties of ZnO/CuPc/Si Structures.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065
By:
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.
Publication type:
Article
Photosensitive Structures Based on HgGa2S4 Single Crystals: Preparation and Properties.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1291, doi. 10.1134/1.1823061
By:
- Rud, V. Yu.;
- Rud, Yu. V.;
- Ba&icaron;ramov, B. Kh.;
- Il'chuk, G. A.;
- Ukrainets, V. O.;
- Fernelius, N.;
- Shunemann, P. G.
Publication type:
Article
Fabrication and Photosensitivity of Heterojunctions Based on CuIn3Se5 Crystals.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1192, doi. 10.1134/1.1808827
By:
- Bodnar', I. V.;
- Nikitin, S. E.;
- Il'chuk, G. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Yakushev, M. V.
Publication type:
Article
Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties.
Published in:
Semiconductors, 2004, v. 38, n. 9, p. 1018, doi. 10.1134/1.1797478
By:
- Il'chuk, G. A.;
- Klimova, N. V.;
- Kon'kov, O. I.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rudaya, L. I.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.;
- Shamanin, V. V.;
- Yurre, T. A.
Publication type:
Article
Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 393, doi. 10.1134/1.1734664
By:
- Nikitin, S. E.;
- Nikolaev, Yu A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.;
- Fernelius, N.;
- Goldstein, J.
Publication type:
Article
Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 406, doi. 10.1134/1.1734667
By:
- Va&icaron;polin, A. A.;
- Nikolaev, Yu. A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.
Publication type:
Article
Photosensitive Structures Based on the Compound AgIn[sub 11]S[sub 17].
Published in:
Semiconductors, 2004, v. 38, n. 2, p. 165, doi. 10.1134/1.1648369
By:
- Bodnar, I. V.;
- Rud, V. Yu.;
- Rud, Yu. V.
Publication type:
Article
Structures Based on Cu(Ag)In[sub n]S[sub m] Semiconductor Compounds.
Published in:
Semiconductors, 2004, v. 38, n. 2, p. 197, doi. 10.1134/1.1648376
By:
- Bodnar, I. V.;
- Polubok, V. A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Serginov, M. S.
Publication type:
Article