Growth and Properties of CdGa<sub>2</sub>S<sub>4</sub> Single Crystals.
- Published in:
- Inorganic Materials, 2004, v. 40, n. 2, p. 102, doi. 10.1023/B:INMA.0000016081.55152.47
- By:
- Publication type:
- Article
Works by Rud', V. Yu.
Results: 140
1
2
Development and photoelectric properties of In/ p-AgAsS surface-barrier structures.
- Published in:
- Semiconductors, 2010, v. 44, n. 8, p. 1025, doi. 10.1134/S1063782610080129
- By:
- Publication type:
- Article
3
Photosensitivity of n-CdS/ p-CdTe heterojunctions obtained by chemical surface deposition of CdS.
- Published in:
- Semiconductors, 2010, v. 44, n. 3, p. 318, doi. 10.1134/S1063782610030085
- By:
- Publication type:
- Article
4
Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.
- Published in:
- Semiconductors, 2010, v. 44, n. 3, p. 354, doi. 10.1134/S1063782610030140
- By:
- Publication type:
- Article
5
Growth of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(FeIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> single crystals and properties of photoelectric structures on their basis.
- Published in:
- Semiconductors, 2010, v. 44, n. 1, p. 37, doi. 10.1134/S1063782610010057
- By:
- Publication type:
- Article
6
Discovery of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(MnIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> solid solutions and fabrication of photosensitive structures based on them.
- Published in:
- Semiconductors, 2010, v. 44, n. 1, p. 45, doi. 10.1134/S1063782610010070
- By:
- Publication type:
- Article
7
Growing FeIn<sub>2</sub>S<sub>4</sub> single crystals and fabrication of photosensitive structures on their basis.
- Published in:
- Semiconductors, 2009, v. 43, n. 11, p. 1510, doi. 10.1134/S1063782609110190
- By:
- Publication type:
- Article
8
Photosensitive structures on single crystals of MnIn<sub>2</sub>S<sub>4</sub>: Preparation and properties.
- Published in:
- Semiconductors, 2009, v. 43, n. 11, p. 1506, doi. 10.1134/S1063782609110189
- By:
- Publication type:
- Article
9
Electrical properties of In<sub>2</sub>Se<sub>3</sub> single crystals and photosensitivity of Al/In<sub>2</sub>Se<sub>3</sub> Schottky barriers.
- Published in:
- Semiconductors, 2009, v. 43, n. 9, p. 1138, doi. 10.1134/S1063782609090061
- By:
- Publication type:
- Article
10
Photosensitive structures based on ZnP<sub>2</sub> single crystals of monoclinic and tetragonal modifications: Fabrication and properties.
- Published in:
- Semiconductors, 2009, v. 43, n. 7, p. 858, doi. 10.1134/S1063782609070069
- By:
- Publication type:
- Article
11
Photoelectrochemical cells based on In<sub>2</sub>S<sub>3</sub> single crystals.
- Published in:
- Semiconductors, 2009, v. 43, n. 4, p. 425, doi. 10.1134/S1063782609040046
- By:
- Publication type:
- Article
12
Photoelectrochemical cells based on ternary compounds CuIn<sub>2 n + 1</sub>Se<sub>3 n + 2</sub> ( n = 3–6).
- Published in:
- Semiconductors, 2009, v. 43, n. 3, p. 374, doi. 10.1134/S106378260903021X
- By:
- Publication type:
- Article
13
Photosensitivity of the Ni- n-GaAs Schottky barriers.
- Published in:
- Semiconductors, 2009, v. 43, n. 1, p. 29, doi. 10.1134/S1063782609010072
- By:
- Publication type:
- Article
14
Properties of CuIn<sub>3</sub>Se<sub>5</sub> crystals and In/CuIn<sub>3</sub>Se<sub>5</sub> structures.
- Published in:
- Semiconductors, 2007, v. 41, n. 11, p. 1307, doi. 10.1134/S106378260711005X
- By:
- Publication type:
- Article
15
Fabrication and properties of point structures formed on n-InSe single crystals.
- Published in:
- Semiconductors, 2007, v. 41, n. 10, p. 1170, doi. 10.1134/S1063782607100077
- By:
- Publication type:
- Article
16
Photosensitivity of the structures on the Cu(In,Ga)(S,Se)<sub>2</sub> films obtained by thermal treatment in the S and Se vapors.
- Published in:
- Semiconductors, 2007, v. 41, n. 10, p. 1173, doi. 10.1134/S1063782607100089
- By:
- Publication type:
- Article
17
Cadmium-free thin-film Cu(In,Ga)Se<sub>2</sub>/(In<sub>2</sub>S<sub>3</sub>) heterophotoelements: Fabrication and properties.
- Published in:
- Semiconductors, 2007, v. 41, n. 8, p. 973, doi. 10.1134/S1063782607080210
- By:
- Publication type:
- Article
18
Fabrication and photoelectric properties of oxide/CuIn<sub>5</sub>Se<sub>8</sub> heterojunctions.
- Published in:
- Semiconductors, 2007, v. 41, n. 2, p. 155, doi. 10.1134/S1063782607020078
- By:
- Publication type:
- Article
19
Photoelectric cells based on n-Ox/n-InSe heterojunctions: fabrication and properties.
- Published in:
- Semiconductors, 2006, v. 40, n. 11, p. 1321, doi. 10.1134/S1063782606110121
- By:
- Publication type:
- Article
20
Surface-barrier In/ p-CuGa<sub>3</sub>Te<sub>5</sub> and In/ p-CuGa<sub>5</sub>Te<sub>8</sub> structures: Fabrication and properties.
- Published in:
- Semiconductors, 2006, v. 40, n. 9, p. 1028, doi. 10.1134/S1063782606090077
- By:
- Publication type:
- Article
21
Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se<sub>2</sub> Heterostructures and Exposed to γ-ray Radiation.
- Published in:
- Semiconductors, 2005, v. 39, n. 12, p. 1406, doi. 10.1134/1.2140314
- By:
- Publication type:
- Article
22
Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases.
- Published in:
- Semiconductors, 2005, v. 39, n. 11, p. 1294, doi. 10.1134/1.2128453
- By:
- Publication type:
- Article
23
Photoelectric Properties of Surface-Barrier Structures Based on Zn<sub>2 – 2x</sub>Cu<sub>x</sub>In<sub>x</sub>Se<sub>2</sub> Films Obtained by Selenization.
- Published in:
- Semiconductors, 2005, v. 39, n. 9, p. 1035, doi. 10.1134/1.2042594
- By:
- Publication type:
- Article
24
Photoconversion in n-ZnO:Al/PdPc/p-CuIn<sub>3</sub>Se<sub>5</sub> Structures.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 402, doi. 10.1134/1.1900252
- By:
- Publication type:
- Article
25
Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 409, doi. 10.1134/1.1900254
- By:
- Publication type:
- Article
26
The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se<sub>2</sub> Structures.
- Published in:
- Semiconductors, 2005, v. 39, n. 3, p. 331, doi. 10.1134/1.1882796
- By:
- Publication type:
- Article
27
Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se<sub>2</sub> Heterojunctions.
- Published in:
- Semiconductors, 2005, v. 39, n. 2, p. 202, doi. 10.1134/1.1864199
- By:
- Publication type:
- Article
28
Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures.
- Published in:
- Semiconductors, 2005, v. 39, n. 2, p. 218, doi. 10.1134/1.1864202
- By:
- Publication type:
- Article
29
Photosensitive Structures Based on HgGa<sub>2</sub>S<sub>4</sub> Single Crystals: Preparation and Properties.
- Published in:
- Semiconductors, 2004, v. 38, n. 11, p. 1291, doi. 10.1134/1.1823061
- By:
- Publication type:
- Article
30
Photoelectric Properties of ZnO/CuPc/Si Structures.
- Published in:
- Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065
- By:
- Publication type:
- Article
31
Fabrication and Photosensitivity of Heterojunctions Based on CuIn<sub>3</sub>Se<sub>5</sub> Crystals.
- Published in:
- Semiconductors, 2004, v. 38, n. 10, p. 1192, doi. 10.1134/1.1808827
- By:
- Publication type:
- Article
32
Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties.
- Published in:
- Semiconductors, 2004, v. 38, n. 9, p. 1018, doi. 10.1134/1.1797478
- By:
- Publication type:
- Article
33
Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions.
- Published in:
- Semiconductors, 2004, v. 38, n. 4, p. 393, doi. 10.1134/1.1734664
- By:
- Publication type:
- Article
34
Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium.
- Published in:
- Semiconductors, 2004, v. 38, n. 4, p. 406, doi. 10.1134/1.1734667
- By:
- Publication type:
- Article
35
Photosensitive Structures Based on the Compound AgIn[sub 11]S[sub 17].
- Published in:
- Semiconductors, 2004, v. 38, n. 2, p. 165, doi. 10.1134/1.1648369
- By:
- Publication type:
- Article
36
Structures Based on Cu(Ag)In[sub n]S[sub m] Semiconductor Compounds.
- Published in:
- Semiconductors, 2004, v. 38, n. 2, p. 197, doi. 10.1134/1.1648376
- By:
- Publication type:
- Article
37
Photosensitive Structure on CdGa[sub 2]S[sub 4] Single Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1283, doi. 10.1134/1.1626209
- By:
- Publication type:
- Article
38
Photoelectric Phenomena in ZnO:Al–p-Si Heterostructures.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1291, doi. 10.1134/1.1626210
- By:
- Publication type:
- Article
39
Photosensitive Structures Based on In[sub 2]S[sub 3] Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1308, doi. 10.1134/1.1626214
- By:
- Publication type:
- Article
40
Photosensitive Structures Based on ZnIn[sub 2]Se[sub 4] Single Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 4, p. 414, doi. 10.1134/1.1568460
- By:
- Publication type:
- Article
41
Photovoltaic Effects in CdV[sub 2]S[sub 4] Single Crystals and Structures Based on Them.
- Published in:
- Semiconductors, 2003, v. 37, n. 6, p. 641, doi. 10.1134/1.1582528
- By:
- Publication type:
- Article
42
Fabrication and Properties of ZnFe[sub 2]S[sub 4] Single Crystals and Structures Based on Them.
- Published in:
- Semiconductors, 2003, v. 37, n. 6, p. 656, doi. 10.1134/1.1582531
- By:
- Publication type:
- Article
43
Photosensitive Structures Based on CdGa[sub 2]Se[sub 4] Single Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 5, p. 553, doi. 10.1134/1.1575360
- By:
- Publication type:
- Article
44
Fabrication and Properties of Photosensitive Structures Based on ZnIn[sub 2]S[sub 4] Single Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 2, p. 178, doi. 10.1134/1.1548661
- By:
- Publication type:
- Article
45
Photosensitivity of Structures Based on I–III[sub n]–VI[sub m] Ternary Compounds Containing Ordered Vacancies.
- Published in:
- Semiconductors, 2002, v. 36, n. 10, p. 1132
- By:
- Publication type:
- Article
46
Photoelectric Phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al Solar Cells.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1048, doi. 10.1134/1.1507289
- By:
- Publication type:
- Article
47
Solar Cells Based on CuIn[sub 1 – ][sub x]Ga[sub x]Se[sub 2] Films Obtained by Pulsed Laser Evaporation.
- Published in:
- Semiconductors, 2002, v. 36, n. 3, p. 340, doi. 10.1134/1.1461414
- By:
- Publication type:
- Article
48
Photoelectric Phenomena in (μc[sub x]a[sub 1 – ][sub x])-Si:H/c-Si Heterostructures.
- Published in:
- Semiconductors, 2001, v. 35, n. 11, p. 1259, doi. 10.1134/1.1418068
- By:
- Publication type:
- Article
49
Photosensitivity of a - C:H/c -Si Heterojunctions.
- Published in:
- Semiconductors, 2001, v. 35, n. 11, p. 1282, doi. 10.1134/1.1418072
- By:
- Publication type:
- Article
50
An Analysis of the Temperature Dependence of the Electron Mobility in the CdGeAs[sub 2] Single Crystals.
- Published in:
- Semiconductors, 2001, v. 35, n. 6, p. 690, doi. 10.1134/1.1379406
- By:
- Publication type:
- Article