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Transmission Electron Microscope Investigations Of Defects Produced By Individual Displacement Cascades In Si And Ge.
- Published in:
- Journal of Microscopy, 1980, v. 118, n. 1, p. 67, doi. 10.1111/j.1365-2818.1980.tb00247.x
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- Article
Silicon Nanocrystal Formation upon Annealing of SiO[sub 2] Layers Implanted with Si Ions.
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- Semiconductors, 2002, v. 36, n. 6, p. 647, doi. 10.1134/1.1485663
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- Article
The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates during Heat Treatment of SiO[sub 2] Layers Implanted with Si[sup +] ions.
- Published in:
- Semiconductors, 2001, v. 35, n. 10, p. 1182, doi. 10.1134/1.1410661
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- Article
The Influence of Irradiation and Subsequent Annealing on Si Nanocrystals Formed in SiO[sub 2] Layers.
- Published in:
- Semiconductors, 2000, v. 34, n. 8, p. 965, doi. 10.1134/1.1188109
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- Article