Found: 5
Select item for more details and to access through your institution.
High-Efficiency 3.4–4.4μm Light-Emitting Diodes Based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb Heterostructure Operating at Room Temperature.
- Published in:
- Technical Physics Letters, 2001, v. 27, n. 3, p. 173, doi. 10.1134/1.1359816
- By:
- Publication type:
- Article
Properties of the electron channel in single GaInAsSb/p-InAs heterostructures.
- Published in:
- Technical Physics Letters, 1997, v. 23, n. 2, p. 128, doi. 10.1134/1.1261586
- By:
- Publication type:
- Article
Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties.
- Published in:
- Semiconductors, 2001, v. 35, n. 3, p. 331, doi. 10.1134/1.1356157
- By:
- Publication type:
- Article
Magnetotransport in a Semimetal Channel in p-Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] / p-InAs Heterostructures with Various Compositions of the Solid Solution.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 189, doi. 10.1134/1.1187965
- By:
- Publication type:
- Article
Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it.
- Published in:
- Semiconductors, 1999, v. 33, n. 7, p. 719, doi. 10.1134/1.1187768
- By:
- Publication type:
- Article