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Approaching barrier-free contacts to monolayer MoS<sub>2</sub> employing [Co/Pt] multilayer electrodes.
Published in:
NPG Asia Materials, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41427-021-00284-1
By:
- Gupta, S.;
- Rortais, F.;
- Ohshima, R.;
- Ando, Y.;
- Endo, T.;
- Miyata, Y.;
- Shiraishi, M.
Publication type:
Article
Approaching barrier-free contacts to monolayer MoS<sub>2</sub> employing [Co/Pt] multilayer electrodes.
Published in:
NPG Asia Materials, 2021, v. 13, n. 1, p. 1, doi. 10.1038/s41427-021-00284-1
By:
- Gupta, S.;
- Rortais, F.;
- Ohshima, R.;
- Ando, Y.;
- Endo, T.;
- Miyata, Y.;
- Shiraishi, M.
Publication type:
Article
Monolayer MoS<sub>2</sub> field effect transistor with low Schottky barrier height with ferromagnetic metal contacts.
Published in:
Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-53367-z
By:
- Gupta, Sachin;
- Rortais, F.;
- Ohshima, R.;
- Ando, Y.;
- Endo, T.;
- Miyata, Y.;
- Shiraishi, M.
Publication type:
Article
Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface.
Published in:
Nature Communications, 2016, v. 7, n. 12, p. 13857, doi. 10.1038/ncomms13857
By:
- Oyarzún, S.;
- Nandy, A. K.;
- Rortais, F.;
- Rojas-Sánchez, J.-C.;
- Dau, M.-T.;
- Noël, P.;
- Laczkowski, P.;
- Pouget, S.;
- Okuno, H.;
- Vila, L.;
- Vergnaud, C.;
- Beigné, C.;
- Marty, A.;
- Attané, J.-P.;
- Gambarelli, S.;
- George, J.-M.;
- Jaffrès, H.;
- Blügel, S.;
- Jamet, M.
Publication type:
Article