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The Effect of Maintaining a High Conductivity State in High-Voltage GaAs Diodes Switched-on in the Delayed Avalanche Breakdown Mode.
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- Technical Physics Letters, 2023, v. 49, p. S116, doi. 10.1134/S1063785023900522
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- Article
Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S22, doi. 10.1134/S1063785023900273
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- Article
Wave Effects in a Coaxial Transmission Line under Subnanosecond Switching of a High-Voltage Diode in the Delayed Impact-Ionization Breakdown Mode.
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- Technical Physics Letters, 2021, v. 47, n. 9, p. 661, doi. 10.1134/S1063785021070087
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- Article
Double Avalanche Injection in Diode Avalanche Sharpeners.
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- Semiconductors, 2020, v. 54, n. 3, p. 345, doi. 10.1134/S1063782620030100
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- Article
Subnanosecond Avalanche Switching Simulations of n<sup>+</sup>–n–n<sup>+</sup> Silicon Structures.
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- Semiconductors, 2019, v. 53, n. 3, p. 379, doi. 10.1134/S1063782619030151
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- Article
Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without <italic>p</italic>-<italic>n</italic> Junctions.
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- Technical Physics Letters, 2018, v. 44, n. 2, p. 160, doi. 10.1134/S1063785018020177
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- Article
Addressing a model of multistreamer switching in high-voltage silicon p-n junctions above the Zener breakdown threshold.
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- Technical Physics Letters, 2007, v. 33, n. 2, p. 180, doi. 10.1134/S1063785007020265
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- Article
Critical Voltage Growth Rate when Initiating the Ultrafast Impact Ionization Front in a Diode Structure.
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- Semiconductors, 2000, v. 34, n. 6, p. 665, doi. 10.1134/1.1188051
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- Article
Transverse stability of an impact-ionization front in a Si p[sup +]-n-n[sup +] structure.
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- Semiconductors, 1997, v. 31, n. 4, p. 366, doi. 10.1134/1.1187164
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- Article