Found: 12
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Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201600764
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- Article
Graphene integration with nitride semiconductors for high power and high frequency electronics.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600460
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- Article
Ti/Al-based contacts to p-type SiC and GaN for power device applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600357
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- Article
Effect of SiO<sub>2</sub> interlayer on the properties of Al<sub>2</sub>O<sub>3</sub> thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600365
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- Article
Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS<sub>2</sub> transistors.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209
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- Article
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in NO and POCl.
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- Applied Physics A: Materials Science & Processing, 2014, v. 115, n. 1, p. 333, doi. 10.1007/s00339-013-7824-y
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- Article
Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO<sub>2</sub>.
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- Nanoscale Research Letters, 2009, v. 4, n. 3, p. 262, doi. 10.1007/s11671-008-9235-0
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Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO<sub>2</sub>.
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- Nanoscale Research Letters, 2008, v. 3, n. 11, p. 454, doi. 10.1007/s11671-008-9180-y
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- Article
Electrical Properties of Self-Assembled Nano-Schottky Diodes.
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- Journal of Nanomaterials, 2008, p. 1, doi. 10.1155/2008/243792
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- Article
Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO<sub>2</sub>.
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- Nanoscale Research Letters, 2007, v. 2, n. 5, p. 240, doi. 10.1007/s11671-007-9058-4
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- Article
Effects of implantation defects on the carrier concentration of 6H-SiC.
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- Applied Physics A: Materials Science & Processing, 2006, v. 82, n. 3, p. 543, doi. 10.1007/s00339-005-3379-x
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- Article
Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni 6H-SiC barrier height.
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- Applied Physics A: Materials Science & Processing, 2003, v. 77, n. 6, p. 827, doi. 10.1007/s00339-002-1981-8
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- Article