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Band Offsets Analysis of Dilute Nitride Single Quantum Well Structures Employing Surface Photo Voltage Measurements.
- Published in:
- Journal of Electronic Materials, 2006, v. 35, n. 4, p. 733, doi. 10.1007/s11664-006-0130-0
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- Article
A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures.
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- Scientific Reports, 2017, p. 43644, doi. 10.1038/srep43644
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- Article
Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.
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- Scientific Reports, 2016, p. 31679, doi. 10.1038/srep31679
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- Article
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.
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- Scientific Reports, 2016, p. 23843, doi. 10.1038/srep23843
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- Article
Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.
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- Scientific Reports, 2016, p. 20633, doi. 10.1038/srep20633
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- Article
Coincident-site lattice matching during van der Waals epitaxy.
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- Scientific Reports, 2015, p. 18079, doi. 10.1038/srep18079
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- Article
Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit.
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- Nano Research, 2010, v. 3, n. 12, p. 881, doi. 10.1007/s12274-010-0061-1
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- Article
Direct comparison of catalyst-free and catalyst-induced GaN nanowires.
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- Nano Research, 2010, v. 3, n. 7, p. 528, doi. 10.1007/s12274-010-0013-9
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- Article
Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys.
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- Advanced Materials, 2013, v. 25, n. 5, p. 738, doi. 10.1002/adma.201202597
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- Article
Epitaxial phase-change materials.
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- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 11, p. 415, doi. 10.1002/pssr.201206387
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- Article
Cover Picture: Epitaxial phase-change materials (Phys. Status Solidi RRL 11/2012).
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- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 11, p. n/a, doi. 10.1002/pssr.201290025
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- Article
Physical properties of III-V semiconductor compounds-InP, InAs, GaAs, GaP, InGaAs and InGaAsP. By Sadao Adachi, John Wiley & Sons, Chichester, UK 1992, XVIII, 318 pp., hardcover, £ 55, ISBN 0-471-57329-9.
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- Advanced Materials, 1994, v. 6, n. 1, p. 86, doi. 10.1002/adma.19940060123
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- Article
Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers.
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- Solar RRL, 2020, v. 4, n. 12, p. 1, doi. 10.1002/solr.202000568
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- Article
Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces.
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- Nature Communications, 2015, v. 6, n. 7, p. 7632, doi. 10.1038/ncomms8632
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- Article
Long-range crystal-lattice distortion fields of epitaxial Ge- Sb- Te phase-change materials (Phys. Status Solidi B 4/2014).
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- 2014
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- Other
Long-range crystal-lattice distortion fields of epitaxial Ge- Sb- Te phase-change materials.
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- Physica Status Solidi (B), 2014, v. 251, n. 4, p. 769, doi. 10.1002/pssb.201350138
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- Article
On the epitaxy of germanium telluride thin films on silicon substrates.
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- Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1939, doi. 10.1002/pssb.201200367
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- Article
GaN and ZnO nanostructures.
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- Physica Status Solidi (B), 2010, v. 247, n. 10, p. 2315, doi. 10.1002/pssb.201046062
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- Article
H- and D-related mid-infrared absorption bands in Ga<sub>1- y </sub>In <sub>y</sub> As<sub>1- x </sub>N <sub>x</sub> epitaxial layers.
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- Physica Status Solidi (B), 2009, v. 246, n. 1, p. 200, doi. 10.1002/pssb.200844270
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- Article
Silicon to nickel-silicide axial nanowire heterostructures for high performance electronics.
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- Physica Status Solidi (B), 2007, v. 244, n. 11, p. 4170, doi. 10.1002/pssb.200776198
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- Article
Temperature and pressure dependence of the recombination mechanisms in 1.3 μm and 1.5 μm GaInNAs lasers.
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- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 208, doi. 10.1002/pssb.200672575
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- Article
Silicon nanowires: catalytic growth and electrical characterization.
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- Physica Status Solidi (B), 2006, v. 243, n. 13, p. 3340, doi. 10.1002/pssb.200669138
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- Article
Lighting the 21st century.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 893, doi. 10.1002/pssa.201570434
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- Article
Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 3, p. 427, doi. 10.1002/pssa.201100477
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- Article
Diameter evolution of selective area grown Ga-assisted GaAs nanowires.
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- Nano Research, 2018, v. 11, n. 5, p. 2885, doi. 10.1007/s12274-018-1984-1
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- Article
Shell-doping of GaAs nanowires with Si for n-type conductivity.
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- Nano Research, 2012, v. 5, n. 11, p. 796, doi. 10.1007/s12274-012-0263-9
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- Article