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Defect-Related Luminescence in Undoped GaN Grown by HVPE.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1281, doi. 10.1007/s11664-014-3540-4
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Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV.
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- Semiconductors, 2004, v. 38, n. 7, p. 791, doi. 10.1134/1.1777602
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- Article
Investigation of Defects and Polarity in GaN Using Hot Wet Etching, Atomic Force and Transmission Electron Microscopy and Convergent Beam Electron Diffraction.
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- Physica Status Solidi (B), 2001, v. 228, n. 2, p. 513, doi. 10.1002/1521-3951(200111)228:2<513::AID-PSSB513>3.0.CO;2-Y
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A Comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity.
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- Physica Status Solidi (B), 2001, v. 228, n. 2, p. 543, doi. 10.1002/1521-3951(200111)228:2<543::AID-PSSB543>3.0.CO;2-M
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