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Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000229
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Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>/Co/Pt Heterostructure.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000102
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- Article
Spin‐Orbit Torque: Tuning Effective Spin Hall Angles via Oxygen Vacancies in Multiferroic BiFeO<sub>3</sub>‐Based Heterostructures (Adv. Electron. Mater. 10/2019).
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- Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900435
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Tuning Effective Spin Hall Angles via Oxygen Vacancies in Multiferroic BiFeO<sub>3</sub>‐Based Heterostructures.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900435
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- Publication type:
- Article