Works matching AU Ren, F.


Results: 203
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    AUTOMATIC ABSTRACTING IMPORTANT SENTENCES.

    Published in:
    International Journal of Information Technology & Decision Making, 2005, v. 4, n. 1, p. 141, doi. 10.1142/S0219622005001428
    By:
    • REN, F. J.
    Publication type:
    Article
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    Carbon Nanotubes as Optical Antennae.

    Published in:
    Advanced Materials, 2007, v. 19, n. 3, p. 421, doi. 10.1002/adma.200601187
    By:
    • Kempa, K.;
    • Rybczynski, J.;
    • Huang, Z.;
    • Gregorczyk, K.;
    • Vidan, A.;
    • Kimball, B.;
    • Carlson, J.;
    • Benham, G.;
    • Wang, Y.;
    • Herczynski, A.;
    • Ren, Z. F.
    Publication type:
    Article
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    GaN Electronics.

    Published in:
    Advanced Materials, 2000, v. 12, n. 21, p. 1571, doi. 10.1002/1521-4095(200011)12:21<1571::AID-ADMA1571>3.0.CO;2-T
    By:
    • Pearton, S. J.;
    • Ren, F.
    Publication type:
    Article
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    Superplastic carbon nanotubes.

    Published in:
    Nature, 2006, v. 439, n. 7074, p. 281, doi. 10.1038/439281a
    By:
    • Huang, J. Y.;
    • Chen, S.;
    • Wang, Z. Q.;
    • Kempa, K.;
    • Wang, Y. M.;
    • Jo, S. H.;
    • Chen, G.;
    • Dresselhaus, M. S.;
    • Ren, Z. F.
    Publication type:
    Article
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    ZnO and Related Materials for Sensors and Light-Emitting Diodes.

    Published in:
    Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1426, doi. 10.1007/s11664-008-0416-5
    By:
    • PEARTON, S. J.;
    • LIM, W. T.;
    • WRIGHT, J. S.;
    • TIEN, L. C.;
    • KIM, H. S.;
    • NORTON, D. P.;
    • WANG, H. T.;
    • KANG, B. S.;
    • REN, F.;
    • JUN, J.;
    • LIN, J.;
    • OSINSKY, A.
    Publication type:
    Article
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    Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors.

    Published in:
    Journal of Electronic Materials, 2008, v. 37, n. 5, p. 550, doi. 10.1007/s11664-007-0298-y
    By:
    • Kang, B. S.;
    • Wang, H. T.;
    • Ren, F.;
    • Hlad, M.;
    • Gila, B. P.;
    • Abernathy, C. R.;
    • Pearton, S. J.;
    • Li, C.;
    • Low, Z. N.;
    • Lin, J.;
    • Johnson, J. W.;
    • Rajagopal, P.;
    • Roberts, J. C.;
    • Piner, E. L.;
    • Linthicum, K. J.
    Publication type:
    Article
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    ZnO Spintronics and Nanowire Devices.

    Published in:
    Journal of Electronic Materials, 2006, v. 35, n. 5, p. 862, doi. 10.1007/BF02692541
    By:
    • Pearton, S. J.;
    • Norton, D. P.;
    • Heo, Y. W.;
    • Tien, L. C.;
    • Ivill, M. P.;
    • Li, Y.;
    • Kang, B. S.;
    • Ren, F.;
    • Kelly, J.;
    • Hebard, A. F.
    Publication type:
    Article
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    Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications.

    Published in:
    Journal of Electronic Materials, 2006, v. 35, n. 4, p. 685, doi. 10.1007/s11664-006-0121-1
    By:
    • Soohwan Jang;
    • Ren, F.;
    • Pearton, S. J.;
    • Gila, B. P.;
    • Hlad, M.;
    • Abernathy, C. R.;
    • Hyucksoo Yang;
    • Pan, C. J.;
    • Jenn-Inn Chyi;
    • Bove, P.;
    • Lahreche, H.;
    • Thuret, J.
    Publication type:
    Article
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