Works by Rebohle, L.

Results: 18

Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 125, doi. 10.1134/1.1349916

By:

Tyschenko, I. E.;
Zhuravlev, K. S.;
Vandyshev, E. N.;
Misiuk, A.;
Yankov, R. A.;
Rebohle, L.;
Skorupa, W.

Publication type:

Article

Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 21, doi. 10.1134/1.1187944

By:

Kachurin, G. A.;
Rebohle, L.;
Tyschenko, I. E.;
Volodin, V. A.;
Voelskow, M.;
Skorupa, W.;
Froeb, H.

Publication type:

Article

Photoluminescence of Si[sub 3]N[sub 4] films implanted with Ge[sup +] and Ar[sup +] ions.

Published in:

Semiconductors, 1999, v. 33, n. 5, p. 523, doi. 10.1134/1.1187721

By:

Tyschenko, I. E.;
Volodin, V. A.;
Rebohle, L.;
Voelskov, M.;
Skorupa, V.

Publication type:

Article

Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 392, doi. 10.1134/1.1187417

By:

Kachurin, G. A.;
Rebohle, L.;
Skorupa, W.;
Yankov, R. A.;
Tyschenko, I. E.;
Froeb, H.;
Boehme, T.;
Leo, K.

Publication type:

Article

Group-IV nanocluster formation by ion-beam synthesis.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 7, p. 1049, doi. 10.1007/s00339-002-1947-x

By:

Skorupa, W.;
Rebohle, L.;
Gebel, T.

Publication type:

Article

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 5, p. 823, doi. 10.1007/s00339-002-1963-x

By:

Kaschieva, S.;
Rebohle, L.;
Skorupa, W.

Publication type:

Article

Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure.

Published in:

Physica Status Solidi (B), 1999, v. 211, n. 1, p. 233, doi. 10.1002/(SICI)1521-3951(199901)211:1<233::AID-PSSB233>3.0.CO;2-B

By:

Misiuk, A.;
Surma, B.;
Rebohle, L.;
Jun, J.;
Antonova, I. V.;
Tyschenko, I.;
Romano-Rodriguez, A.;
Lopez, M.

Publication type:

Article

Radiative Recombination in Ge+-Implanted SiO2 Films Annealed under Hydrostatic Pressure.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 818, doi. 10.1134/1.1777607

By:

Tyschenko, I.E.;
Rebohle, L.

Publication type:

Article

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34

By:

Tiagulskyi, S. I.;
Nazarov, A. N.;
Gordienko, S. O.;
Vasin, A. V.;
Rusavsky, A. V.;
Nazarova, T. M.;
Gomeniuk, Yu. V.;
Rudko, G. V.;
Lysenko, V. S.;
Rebohle, L.;
Voelskow, M.;
Skorupa, W.;
Koshka, Y.

Publication type:

Article

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319

By:

Nazarov, A. N.;
Osiyuk, I. N.;
Tiagulskyi, S. I.;
Lysenko, V. S.;
Tyagulskyy, I. P.;
Torbin, V. N.;
Omelchuk, V. V.;
Nazarova, T. M.;
Rebohle, L.;
Skorupa, W.

Publication type:

Article

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090

By:

Nazarov, A. N.;
Skorupa, W.;
Vovk, Ja. N.;
Osiyuk, I. N.;
Tkachenko, A. S.;
Tyagulskii, I. P.;
Lysenko, V. S.;
Gebel, T.;
Rebohle, L.;
Yankov, R. A.;
Nazarova, T. M.

Publication type:

Article

Transient behavior of the strong violet electroluminescence of Ge-implanted SiO[sub 2] layers.

Published in:

Applied Physics B: Lasers & Optics, 2002, v. 74, n. 1, p. 53, doi. 10.1007/s003400100771

By:

Rebohle, L.;
Gebel, T.;
von Borany, J.;
Skorupa, W.;
Helm, M.;
Pacifici, D.;
Franzò, G.;
Priolo, F.

Publication type:

Article

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements.

Published in:

Applied Physics B: Lasers & Optics, 2000, v. 71, n. 2, p. 131, doi. 10.1007/PL00006966

By:

Rebohle, L.;
von Borany, J.;
Fröb, H.;
Skorupa, W.

Publication type:

Article

Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence.

Published in:

Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 439, doi. 10.1007/s00340-009-3729-z

By:

Rebohle, L.;
Lehmann, J.;
Prucnal, S.;
Sun, J. M.;
Helm, M.;
Skorupa, W.

Publication type:

Article

Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion.

Published in:

Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 451, doi. 10.1007/s00340-009-3751-1

By:

Prucnal, S.;
Rebohle, L.;
Skorupa, W.

Publication type:

Article

Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures.

Published in:

Applied Physics B: Lasers & Optics, 2009, v. 94, n. 2, p. 289, doi. 10.1007/s00340-008-3338-2

By:

Prucnal, S.;
Rebohle, L.;
Skorupa, W.

Publication type:

Article

Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.

Published in:

Applied Physics B: Lasers & Optics, 2008, v. 91, n. 1, p. 123, doi. 10.1007/s00340-008-2948-z

By:

Prucnal, S.;
Rebohle, L.;
Nazarov, A. N.;
Osiyuk, I. N.;
Tjagulskii, I. P.;
Skorupa, W.

Publication type:

Article

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.

Published in:

Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1

By:

Nazarov, A. N.;
Osiyuk, I. N.;
Sun, J. M.;
Yankov, R. A.;
Skorupa, W.;
Tyagulskii, I. P.;
Lysenko, V. S.;
Prucnal, S.;
Gebel, T.;
Rebohle, L.

Publication type:

Article

Works by Rebohle, L.

Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.

Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.

Photoluminescence of Si[sub 3]N[sub 4] films implanted with Ge[sup +] and Ar[sup +] ions.

Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions

Group-IV nanocluster formation by ion-beam synthesis.

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation.

Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure.

Radiative Recombination in Ge<sup>+</sup>-Implanted SiO<sub>2</sub> Films Annealed under Hydrostatic Pressure.

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.

Transient behavior of the strong violet electroluminescence of Ge-implanted SiO[sub 2] layers.

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements.

Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence.

Blue electroluminescence of ytterbium clusters in SiO<sub>2</sub> by co-operative up-conversion.

Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures.

Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.