Found: 3

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  • CVD graphene contacts for lateral heterostructure MoS2 field effect transistors.

    Published in:
    NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00471-y
    By:
    • Schneider, Daniel S.;
    • Lucchesi, Leonardo;
    • Reato, Eros;
    • Wang, Zhenyu;
    • Piacentini, Agata;
    • Bolten, Jens;
    • Marian, Damiano;
    • Marin, Enrique G.;
    • Radenovic, Aleksandra;
    • Wang, Zhenxing;
    • Fiori, Gianluca;
    • Kis, Andras;
    • Iannaccone, Giuseppe;
    • Neumaier, Daniel;
    • Lemme, Max C.
    Publication type:
    Article

  • Zero‐Bias Power‐Detector Circuits based on MoS<sub>2</sub> Field‐Effect Transistors on Wafer‐Scale Flexible Substrates.

    Published in:
    Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108469
    By:
    • Reato, Eros;
    • Palacios, Paula;
    • Uzlu, Burkay;
    • Saeed, Mohamed;
    • Grundmann, Annika;
    • Wang, Zhenyu;
    • Schneider, Daniel S.;
    • Wang, Zhenxing;
    • Heuken, Michael;
    • Kalisch, Holger;
    • Vescan, Andrei;
    • Radenovic, Alexandra;
    • Kis, Andras;
    • Neumaier, Daniel;
    • Negra, Renato;
    • Lemme, Max C.
    Publication type:
    Article

  • Button shear testing for adhesion measurements of 2D materials.

    Published in:
    Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-46136-8
    By:
    • Schätz, Josef;
    • Nayi, Navin;
    • Weber, Jonas;
    • Metzke, Christoph;
    • Lukas, Sebastian;
    • Walter, Jürgen;
    • Schaffus, Tim;
    • Streb, Fabian;
    • Reato, Eros;
    • Piacentini, Agata;
    • Grundmann, Annika;
    • Kalisch, Holger;
    • Heuken, Michael;
    • Vescan, Andrei;
    • Pindl, Stephan;
    • Lemme, Max C.
    Publication type:
    Article