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Sensor composites consisting of a ceramic substrate and thin films of TbOx oxides and (TbOx)0.5(YO1.5)0.5 solid solutions.
Published in:
Glass Physics & Chemistry, 2009, v. 35, n. 5, p. 525, doi. 10.1134/S1087659609050113
By:
- P. Rastegaev;
- M. Kalinina;
- L. Morozova;
- P. Tikhonov;
- M. Rastegaeva;
- M. Panov
Publication type:
Article
Studying local surface electric conductivity of a ZnSe/CdSe/ZnSe heterostructure by scanning tunneling microscopy in the field electron emission regime.
Published in:
Technical Physics Letters, 2009, v. 35, n. 6, p. 504, doi. 10.1134/S1063785009060078
By:
- Masalov, S. A.;
- Evtikhiev, V. P.;
- Rastegaeva, M. G.;
- Ivanov, S. V.
Publication type:
Article
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions.
Published in:
Semiconductors, 2016, v. 50, n. 9, p. 1225, doi. 10.1134/S1063782616090244
By:
- Veselov, D.;
- Shashkin, I.;
- Bakhvalov, K.;
- Lyutetskiy, A.;
- Pikhtin, N.;
- Rastegaeva, M.;
- Slipchenko, S.;
- Bechvay, E.;
- Strelets, V.;
- Shamakhov, V.;
- Tarasov, I.
Publication type:
Article
Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 5, p. 691, doi. 10.1134/S1063782614050200
By:
- Slipchenko, S.;
- Podoskin, A.;
- Pikhtin, N.;
- Zolotarev, V.;
- Shashkin, I.;
- Leshko, A.;
- Lutetskyi, A.;
- Rastegaeva, M.;
- Tarasov, I.;
- Kop'ev, P.
Publication type:
Article
Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm.
Published in:
Semiconductors, 2014, v. 48, n. 3, p. 373, doi. 10.1134/S1063782614030233
By:
- Shamakhov, V.;
- Nikolaev, D.;
- Lyutetskiy, A.;
- Bakhvalov, K.;
- Rastegaeva, M.;
- Slipchenko, S.;
- Pikhtin, N.;
- Tarasov, I.
Publication type:
Article
850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure.
Published in:
Semiconductors, 2013, v. 47, n. 8, p. 1075, doi. 10.1134/S1063782613080204
By:
- Vinokurov, D.;
- Lyutetskiy, A.;
- Nikolaev, D.;
- Shamakhov, V.;
- Bakhvalov, K.;
- Vasylyeva, V.;
- Vavilova, L.;
- Rastegaeva, M.;
- Tarasov, I.
Publication type:
Article
Thermal delocalization of carriers in semiconductor lasers (λ = 1010-1070 nm).
Published in:
Semiconductors, 2012, v. 46, n. 9, p. 1207, doi. 10.1134/S1063782612090205
By:
- Shashkin, I.;
- Vinokurov, D.;
- Lyutetskiy, A.;
- Nikolaev, D.;
- Pikhtin, N.;
- Rastegaeva, M.;
- Sokolova, Z.;
- Slipchenko, S.;
- Stankevich, A.;
- Shamakhov, V.;
- Veselov, D.;
- Bondarev, A.;
- Tarasov, I.
Publication type:
Article
High-order diffraction gratings for high-power semiconductor lasers.
Published in:
Semiconductors, 2012, v. 46, n. 2, p. 241, doi. 10.1134/S1063782612020236
By:
- Vasil'eva, V.;
- Vinokurov, D.;
- Zolotarev, V.;
- Leshko, A.;
- Petrunov, A.;
- Pikhtin, N.;
- Rastegaeva, M.;
- Sokolova, Z.;
- Shashkin, I.;
- Tarasov, I.
Publication type:
Article
A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters.
Published in:
Semiconductors, 2011, v. 45, n. 9, p. 1219, doi. 10.1134/S1063782611090193
By:
- Soldatenkov, F.;
- Sorokina, S.;
- Timoshina, N.;
- Khvostikov, V.;
- Zadiranov, Y.;
- Rastegaeva, M.;
- Usikova, A.
Publication type:
Article
InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate.
Published in:
Semiconductors, 2010, v. 44, n. 12, p. 1592, doi. 10.1134/S1063782610120109
By:
- Vinokurov, D.;
- Nikolaev, D.;
- Pikhtin, N.;
- Stankevich, A.;
- Shamakhov, V.;
- Rastegaeva, M.;
- Rozhkov, A.;
- Tarasov, I.
Publication type:
Article
High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide.
Published in:
Semiconductors, 2006, v. 40, n. 10, p. 1242, doi. 10.1134/S1063782606100216
By:
- Khvostikov, V.;
- Rastegaeva, M.;
- Khvostikova, O.;
- Sorokina, S.;
- Malevskaya, A.;
- Shvarts, M.;
- Andreev, A.;
- Davydov, D.;
- Andreev, V.
Publication type:
Article
Temperature Dependence of the Threshold Current of QW Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1210, doi. 10.1134/1.2085272
By:
- Bazhenov, N. L.;
- Mynbaev, K. D.;
- Ivanov-Omskiı, V. I.;
- Smirnov, V. A.;
- Evtikhiev, V. P.;
- Pikhtin, N. A.;
- Rastegaeva, M. G.;
- Stankevich, A. L.;
- Tarasov, I. S.;
- Shkol'nik, A. S.;
- Zegrya, G.
Publication type:
Article
The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes.
Published in:
Semiconductors, 2000, v. 34, n. 11, p. 1341, doi. 10.1134/1.1325436
By:
- Kotel’nikov, E. Yu.;
- Katsnel’son, A. A.;
- Kudryashov, I. V.;
- Rastegaeva, M. G.;
- Richter, W.;
- Evtikhiev, V. P.;
- Tarasov, I. S.;
- Alferov, Zh. I.
Publication type:
Article
Laser Waveguide with a Reverse Gradient of the Refractive Index.
Published in:
Semiconductors, 2000, v. 34, n. 11, p. 1338, doi. 10.1134/1.1325435
By:
- Kotel’nikov, E. Yu.;
- Kudryashov, I. V.;
- Rastegaeva, M. G.;
- Katsnel’son, A. A.;
- Shkol’nik, A. S.;
- Evtikhiev, V. P.
Publication type:
Article
Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 739, doi. 10.1134/1.1187496
By:
- Andreev, A. N.;
- Rastegaeva, M. G.;
- Rastegaev, V. P.;
- Reshanov, S. A.
Publication type:
Article

Found: 15

Sensor composites consisting of a ceramic substrate and thin films of TbO<sub>x</sub> oxides and (TbO<sub>x</sub>)<sub>0.5</sub>(YO<sub>1.5</sub>)<sub>0.5</sub> solid solutions.

Studying local surface electric conductivity of a ZnSe/CdSe/ZnSe heterostructure by scanning tunneling microscopy in the field electron emission regime.

On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions.

Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures.

Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm.

850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure.

Thermal delocalization of carriers in semiconductor lasers (λ = 1010-1070 nm).

High-order diffraction gratings for high-power semiconductor lasers.

A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters.

InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate.

High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide.

Temperature Dependence of the Threshold Current of QW Lasers.

The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes.

Laser Waveguide with a Reverse Gradient of the Refractive Index.

Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts