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Energy band gap and electrical conductivity of Cd<sub>1-x</sub>Mn<sub>x</sub>Te alloys with different manganese content.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 421
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- Article
Electrical characteristics of the ITO/HgInTe photodiodes.
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- Semiconductors, 2006, v. 40, n. 5, p. 554, doi. 10.1134/S1063782606050083
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- Article
Hg<sub>1 – x – y – z</sub>Cd<sub>x</sub>Mn<sub>y</sub>Zn<sub>z</sub>Te: A New Alternative to Hg<sub>1 – x</sub>Cd<sub>x</sub>Te.
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- Semiconductors, 2004, v. 38, n. 12, p. 1369, doi. 10.1134/1.1836053
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- Article
Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 339
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- Article
A Photoelectric Study of Charge-Carrier Collection in CdZnTe-Based Detectors of X-ray and γ Radiation.
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- Semiconductors, 2004, v. 38, n. 8, p. 981, doi. 10.1134/1.1787123
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- Article
State of Cd<sub>1--X</sub>Zn<sub>X</sub>Te and Cd<sub>1--X</sub>Mn<sub>X</sub>Te surface depending on treatment type.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 52
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- Article
Chemical Etching of CdSb Single Crystals: Thermodynamic Analysis.
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- Inorganic Materials, 2003, v. 39, n. 12, p. 1239, doi. 10.1023/B:INMA.0000008907.53950.5e
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- Article
Specific Features of Conductivity of Cd[sub 1 – x]Zn[sub x]Te and Cd[sub 1 – x]Mn[sub x]Te Single Crystals.
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- Semiconductors, 2003, v. 37, n. 12, p. 1373, doi. 10.1134/1.1634656
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- Article
Electrical Properties of Surface-Barrier Diodes Based on CdZnTe.
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- Semiconductors, 2003, v. 37, n. 2, p. 227, doi. 10.1134/1.1548671
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- Article
Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes.
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- Semiconductors, 2002, v. 36, n. 10, p. 1138, doi. 10.1134/1.1513859
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- Article
Generation–Recombination and Diffusion Currents in HgMnTe n[sup +]–p Junctions.
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- Semiconductors, 2001, v. 35, n. 11, p. 1270, doi. 10.1134/1.1418070
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- Article
Bandgap and Intrinsic Carrier Concentration in HgCdMnTe and HgCdZnTe.
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- Semiconductors, 2000, v. 34, n. 4, p. 415, doi. 10.1134/1.1187998
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- Article
Electrical properties of Hg[sub 1-x]Mn[sub x]Te-based photodiodes.
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- Semiconductors, 1999, v. 33, n. 12, p. 1293, doi. 10.1134/1.1187910
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- Article
Calculating the band structure of InSb[sub 1-x]Bi[sub x] solid solutions.
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- Semiconductors, 1999, v. 33, n. 3, p. 293
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- Article
Two- and three-dimensional conduction channels at block boundaries in (CdHg)Te mosaic crystals.
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- Semiconductors, 1998, v. 32, n. 3, p. 288, doi. 10.1134/1.1187550
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- Article
Acceptors in Cd[sub 1-x]Mn[sub x]Te (x<0.1).
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- Semiconductors, 1997, v. 31, n. 8, p. 869, doi. 10.1134/1.1187243
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- Article
A Study of Interstitial Impurity Diffusion by the Linear Response Theory.
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- Physica Status Solidi (B), 1989, v. 154, n. 2, p. 513, doi. 10.1002/pssb.2221540211
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- Article
Longitudinal Magnetoresistance in (Cd, Hg)Te Crystals in Quantizing Magnetic Fields.
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- Physica Status Solidi (B), 1985, v. 130, n. 2, p. K169, doi. 10.1002/pssb.2221300266
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- Article
Anisotropy of Electroconductivity in CdSb.
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- Physica Status Solidi (B), 1968, v. 27, n. 1, p. 101, doi. 10.1002/pssb.19680270109
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- Article
Piezoresistance of Cadmium Antimonide.
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- Physica Status Solidi (B), 1966, v. 13, n. 1, p. 207, doi. 10.1002/pssb.19660130119
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- Article