Resistive switching memory characteristics of Ge/GeO<sub>x</sub> nanowires and evidence of oxygen ion migration.Published in:Nanoscale Research Letters, 2013, n. 5, p. 1, doi. 10.1186/1556-276X-8-220By:Prakash, Amit;Maikap, Siddheswar;Rahaman, Sheikh Ziaur;Majumdar, Sandip;Manna, Santanu;Ray, Samit K.Publication type:Article