Works matching AU Raghothamachar, Balaji

Results: 27

Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5066, doi. 10.1007/s11664-025-11918-3

By:

Chen, Zeyu;
Cheng, Qianyu;
Hu, Shanshan;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5037, doi. 10.1007/s11664-025-11793-y

By:

Cheng, Qianyu;
Chen, Zeyu;
Hu, Shanshan;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Nucleation of Dislocations from Scratches on the Surface of PVT-Grown 4H-SiC Wafers.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5028, doi. 10.1007/s11664-025-11743-8

By:

Hu, Shanshan;
Chen, Zeyu;
Cheng, Qianyu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Frank Dislocations Generation and Behavior Investigation in PVT-Grown 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4299, doi. 10.1007/s11664-024-11697-3

By:

Hu, Shanshan;
Chen, Zeyu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Defect analysis in crystals using X-ray topography.

Published in:

Microscopy Research & Technique, 2006, v. 69, n. 5, p. 343, doi. 10.1002/jemt.20290

By:

Raghothamachar, Balaji;
Dhanaraj, Govindhan;
Bai, Jie;
Dudley, Michael

Publication type:

Article

Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 7, p. 4104, doi. 10.1007/s11664-021-08888-7

By:

Cheng, Qianyu;
Ailihumaer, Tuerxun;
Liu, Yafei;
Peng, Hongyu;
Chen, Zeyu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3006, doi. 10.1007/s11664-021-08832-9

By:

Peng, Hongyu;
Ailihumaer, Tuerxun;
Liu, Yafei;
Kisslinger, Kim;
Tong, Xiao;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3258, doi. 10.1007/s11664-021-08827-6

By:

Ailihumaer, Tuerxun;
Peng, Hongyu;
Liu, Yafei;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gilyong;
Manning, Ian;
Sanchez, Edward

Publication type:

Article

X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 2981, doi. 10.1007/s11664-021-08762-6

By:

Liu, Yafei;
Peng, Hongyu;
Ailihumaer, Tuerxun;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3472, doi. 10.1007/s11664-020-07981-7

By:

Peng, Hongyu;
Ailihumaer, Tuerxun;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3455, doi. 10.1007/s11664-019-07937-6

By:

Ailihumaer, Tuerxun;
Peng, Hongyu;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gilyong;
Manning, Ian;
Sanchez, Edward

Publication type:

Article

Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3363, doi. 10.1007/s11664-019-07077-x

By:

Ailihumaer, Tuerxun;
Yang, Yu;
Guo, Jianqiu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 903, doi. 10.1007/s11664-017-5789-x

By:

Guo, Jianqiu;
Yang, Yu;
Raghothamachar, Balaji;
Dudley, Michael;
Stoupin, Stanislav

Publication type:

Article

Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 938, doi. 10.1007/s11664-017-5846-5

By:

Yang, Yu;
Guo, Jianqiu;
Raghothamachar, Balaji;
Chan, Xiaojun;
Kim, Taejin;
Dudley, Michael

Publication type:

Article

Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 1218, doi. 10.1007/s11664-017-5863-4

By:

Yang, Yu;
Guo, Jianqiu;
Goue, Ouloide;
Kim, Jun;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gill;
Sanchez, Edward;
Manning, Ian

Publication type:

Article

Prismatic Slip in PVT-Grown 4H-SiC Crystals.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2040, doi. 10.1007/s11664-016-5118-9

By:

Guo, Jianqiu;
Yang, Yu;
Raghothamachar, Balaji;
Kim, Jungyu;
Dudley, Michael;
Chung, Gilyong;
Sanchez, Edward;
Quast, Jeffrey;
Manning, Ian

Publication type:

Article

Study of Defect Structures in 6H-SiC a/ m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2078, doi. 10.1007/s11664-015-4185-7

By:

Goue, Ouloide;
Raghothamachar, Balaji;
Yang, Yu;
Guo, Jianqiu;
Dudley, Michael;
Kisslinger, Kim;
Trunek, Andrew;
Neudeck, Philip;
Spry, David;
Woodworth, Andrew

Publication type:

Article

Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2045, doi. 10.1007/s11664-015-4317-0

By:

Guo, Jianqiu;
Yang, Yu;
Wu, Fangzhen;
Sumakeris, Joe;
Leonard, Robert;
Goue, Ouloide;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2066, doi. 10.1007/s11664-016-4378-8

By:

Yang, Yu;
Guo, Jianqiu;
Goue, Ouloide;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gil;
Sanchez, Edward;
Quast, Jeff;
Manning, Ian;
Hansen, Darren

Publication type:

Article

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1293, doi. 10.1007/s11664-014-3536-0

By:

Wu, Fangzhen;
Wang, Huanhuan;
Raghothamachar, Balaji;
Dudley, Michael;
Chung, Gil;
Zhang, Jie;
Thomas, Bernd;
Sanchez, Edward;
Mueller, Stephan;
Hansen, Darren;
Loboda, Mark;
Zhang, Lihua;
Su, Dong;
Kisslinger, Kim;
Stach, Eric

Publication type:

Article

Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 4, p. 838, doi. 10.1007/s11664-013-2968-2

By:

Zhou, Tianyi;
Raghothamachar, Balaji;
Wu, Fangzhen;
Dalmau, Rafael;
Moody, Baxter;
Craft, Spalding;
Schlesser, Raoul;
Dudley, Michael;
Sitar, Zlatko

Publication type:

Article

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 794, doi. 10.1007/s11664-013-2527-x

By:

Wang, Huanhuan;
Sun, Shun;
Dudley, Michael;
Byrappa, Shayan;
Wu, Fangzhen;
Raghothamachar, Balaji;
Chung, Gil;
Sanchez, Edward;
Mueller, Stephan;
Hansen, Darren;
Loboda, Mark

Publication type:

Article

Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 787, doi. 10.1007/s11664-012-2379-9

By:

Wu, Fangzhen;
Wang, Huanhuan;
Byrappa, Shayan;
Raghothamachar, Balaji;
Dudley, Michael;
Wu, Ping;
Xu, Xueping;
Zwieback, Ilya

Publication type:

Article

Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 799, doi. 10.1007/s11664-010-1105-8

By:

Yu Zhang;
Hui Chen;
Choi, Gloria;
Raghothamachar, Balaji;
Dudley, Michael;
Edgar, James;
Grasza, Krzysztof;
Tymicki, Emil;
Lihua Zhang;
Dong Su;
Yimei Zhu

Publication type:

Article

Upgraded LauePt4 for rapid recognition and fitting of Laue patterns from crystals with unknown orientations.

Published in:

Journal of Applied Crystallography, 2023, v. 56, n. 5, p. 1610, doi. 10.1107/S1600576723007926

By:

Huang, Vincent W.;
Yafei Liu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article

Quantitative analysis of dislocations in 4H‐SiC wafers using synchrotron X‐ray topography with ultra‐high angular resolution.

Published in:

Journal of Applied Crystallography, 2022, v. 55, n. 3, p. 544, doi. 10.1107/S1600576722004046

By:

Peng, Hongyu;
Chen, Zeyu;
Liu, Yafei;
Raghothamachar, Balaji;
Huang, Xianrong;
Assoufid, Lahsen;
Dudley, Michael

Publication type:

Article

Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X‐ray topographs under the condition of g · b = 0 and g · b × l = 0.

Published in:

Journal of Applied Crystallography, 2021, v. 54, n. 2, p. 439, doi. 10.1107/S160057672100025X

By:

Peng, Hongyu;
Ailihumaer, Tuerxun;
Fujie, Fumihiro;
Chen, Zeyu;
Raghothamachar, Balaji;
Dudley, Michael

Publication type:

Article