Found: 10
Select item for more details and to access through your institution.
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.
- Published in:
- Technical Physics Letters, 2006, v. 32, n. 8, p. 674, doi. 10.1134/S1063785006080116
- By:
- Publication type:
- Article
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
- Published in:
- Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951
- By:
- Publication type:
- Article
Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.
- Published in:
- Technical Physics Letters, 2005, v. 31, n. 5, p. 367, doi. 10.1134/1.1931770
- By:
- Publication type:
- Article
Bulk Large-Area GaN Layers.
- Published in:
- Technical Physics Letters, 2003, v. 29, n. 5, p. 400, doi. 10.1134/1.1579807
- By:
- Publication type:
- Article
High-Temperature Annealing of Bulk GaN Layers.
- Published in:
- Technical Physics Letters, 2002, v. 28, n. 12, p. 994, doi. 10.1134/1.1535513
- By:
- Publication type:
- Article
The Absorption Spectra of Gallium Nitride Crystals Doped with Erbium Ions.
- Published in:
- Technical Physics Letters, 2002, v. 28, n. 4, p. 270, doi. 10.1134/1.1476987
- By:
- Publication type:
- Article
Initial Stages of the GaN Growth on Oxidized Silicon.
- Published in:
- Technical Physics Letters, 2001, v. 27, n. 12, p. 1010, doi. 10.1134/1.1432331
- By:
- Publication type:
- Article
Photoluminescence of n-GaN: influence of chemical treatment of the surface using sulfide solutions.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 12, p. 986, doi. 10.1134/1.1262343
- By:
- Publication type:
- Article
Photoelectric properties of ITO/p[sup +]–p[sup -]-InP solar cells in linearly polarized light.
- Published in:
- Technical Physics, 1998, v. 43, n. 5, p. 546, doi. 10.1134/1.1259036
- By:
- Publication type:
- Article
Photoelectric properties of GaN/GaP heterostructures.
- Published in:
- Semiconductors, 1998, v. 32, n. 10, p. 1077, doi. 10.1134/1.1187571
- By:
- Publication type:
- Article