Found: 9
Select item for more details and to access through your institution.
Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers.
- Published in:
- Technical Physics, 2019, v. 64, n. 12, p. 1827, doi. 10.1134/S1063784219120041
- By:
- Publication type:
- Article
Study of the X-ray Optical and Mechanical Characteristics of C/Si and B<sub>4</sub>C/Si Multilayer Mirrors.
- Published in:
- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, v. 17, n. 6, p. 1350, doi. 10.1134/S1027451023060459
- By:
- Publication type:
- Article
Creation of Localized Ensembles of NV Centers in a Diamond Grown in a Microwave CVD Reactor and Study of Their Properties.
- Published in:
- Radiophysics & Quantum Electronics, 2020, v. 63, n. 7, p. 530, doi. 10.1007/s11141-021-10077-9
- By:
- Publication type:
- Article
Study of microwave plasma-assisted chemical vapor deposition of poly-and single-crystalline diamond films.
- Published in:
- Radiophysics & Quantum Electronics, 2007, v. 50, n. 10/11, p. 913, doi. 10.1007/s11141-007-0085-x
- By:
- Publication type:
- Article
Self-Consistent Simulation of Pulsed and Continuous Microwave Discharges in Hydrogen.
- Published in:
- Plasma Physics Reports, 2005, v. 31, n. 11, p. 965, doi. 10.1134/1.2131133
- By:
- Publication type:
- Article
Studies of Pulsed and Continuous Microwave Discharges Used to Deposit Diamond Films.
- Published in:
- Plasma Physics Reports, 2005, v. 31, n. 4, p. 338, doi. 10.1134/1.1904150
- By:
- Publication type:
- Article
Formation of Multilayered Nanostructures of NV Sites in Single-Crystal CVD Diamond.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 7, p. 641, doi. 10.1134/S1063785020070093
- By:
- Publication type:
- Article
The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 6, p. 551, doi. 10.1134/S1063785020060024
- By:
- Publication type:
- Article
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers.
- Published in:
- Semiconductors, 2019, v. 53, n. 10, p. 1348, doi. 10.1134/S106378261910004X
- By:
- Publication type:
- Article